N-type crystalline silicon solar cell and preparation method thereof, and photovoltaic module

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problem of high carrier recombination rate, achieve the effect of improving cost performance, increasing voltage and current, and reducing the cost of electricity

Pending Publication Date: 2018-12-21
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide an N-type crystalline silicon solar cell, a preparation method, and a photovoltaic module, which are used to solve the problem of high minority carrier recombination rate in current N-type crystalline silicon solar cells

Method used

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  • N-type crystalline silicon solar cell and preparation method thereof, and photovoltaic module
  • N-type crystalline silicon solar cell and preparation method thereof, and photovoltaic module
  • N-type crystalline silicon solar cell and preparation method thereof, and photovoltaic module

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preparation example Construction

[0087] A method for preparing an N-type crystalline silicon solar cell provided in an embodiment of the present invention includes the following steps:

[0088] Step S1, providing an N-type crystalline silicon substrate 1;

[0089] Step S2, forming an emitter 3 on the front surface of the N-type crystalline silicon substrate 1;

[0090] In step S3 , a gallium oxide layer 21 in direct contact with the emitter 3 is formed on the emitter 3 .

[0091] As mentioned above, in the N-type crystalline silicon solar cell prepared by the preparation method provided by the embodiment of the present invention, the negatively charged gallium oxide layer 21 is directly in contact with the P-type silicon surface (in an N-type crystalline silicon solar cell, the emission Extremely P-type silicon), on the one hand, chemical passivation and field passivation are carried out on the surface of P-type silicon, thereby reducing the recombination rate of minority carriers at the surface of P-type si...

Embodiment 1

[0112] This embodiment provides a gallium oxide passivated N-type crystalline silicon double-sided solar cell, such as figure 2 As shown, the solar cell includes a front electrode 6, a front passivation layer 2, an emitter 3, and an N-type crystalline silicon substrate 1 arranged in sequence from the front (ie, the light-receiving surface of the solar cell) to the back (ie, the backlight surface of the solar cell). , N-type doped layer 41 , back passivation layer 5 and back electrode 7 .

[0113] Wherein, the N-type crystalline silicon substrate 1 is an N-type single crystal silicon wafer with a resistivity of 2.0Ω·cm and a size of 156.75mm×156.75mm. The emitter 3 is formed by boron diffusion in the furnace tube, and the sheet resistance value after doping is 80Ω / □.

[0114] The front passivation layer 2 includes a gallium oxide layer 21 in direct contact with the emitter 3 and a silicon nitride capping layer 22 disposed on the gallium oxide layer 21, wherein the thickness o...

Embodiment 2

[0130] This embodiment provides a gallium oxide passivated N-type crystalline silicon double-sided solar cell. The difference between the solar cell provided in this embodiment and the solar cell provided in Embodiment 1 is that the gallium oxide in the solar cell provided in this embodiment The thickness of the layer is 1 nm.

[0131] According to the test method and test conditions of Example 1, the performance of the solar cell provided in this example was tested, and the results were: open circuit voltage 0.661V, short circuit current 9.79A, and photoelectric conversion efficiency 20.92%.

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Abstract

The invention discloses an N-type crystalline silicon solar cell and a preparation method thereof, a photovoltaic module, belonging to the technical field of solar cells. The N-type crystalline silicon solar cell comprises a front electrode, a front passivation layer, an emitter, an N-type crystalline silicon substrate, a back passivation layer and a back electrode, wherein the front passivation layer comprises a gallium oxide layer in direct contact with the emitter. In this solar cell, the P-type silicon surface of the emitter of the N-type crystalline silicon solar cell is chemically passivated and field passivated by the negative charge carried by the gallium oxide layer, reducing the minority carrier recombination rate at the P-type silicon surface, Furthermore, the gallium oxide layer is utilized to reduce the absorption of incident light and improve the photocurrent density of the solar cell, thereby increasing the voltage and current of the solar cell, improving the photoelectric conversion efficiency of the solar cell, further increasing the output power of the photovoltaic module, reducing the power cost and improving the performance-price ratio of the photovoltaic powergeneration.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an N-type crystalline silicon solar cell, a preparation method, and a photovoltaic module. Background technique [0002] Photovoltaic power generation, which directly converts solar energy into electricity, is a clean, sustainable and relatively cost-effective way of generating electricity. Crystalline silicon solar cells are an important part of photovoltaic power generation systems. The photoelectric conversion efficiency of crystalline silicon solar cells has an important impact on the output power and cost of electricity of photovoltaic power generation. [0003] According to the type of central crystalline silicon substrate in crystalline silicon solar cells, crystalline silicon solar cells can be divided into P-type crystalline silicon solar cells and N-type crystalline silicon solar cells. Among them, the N-type crystalline silicon solar cell mainly includes a front e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/048H01L31/18
CPCH01L31/02167H01L31/048H01L31/1804Y02E10/547Y02P70/50
Inventor 陈孝业薛文娟尹海鹏
Owner JA SOLAR TECH YANGZHOU
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