High dielectric constant thin film-aluminum oxide laminated structure insulating film and preparation method thereof

Abstract

The invention provides a high dielectric constant thin film-aluminum oxide laminated structure insulating film and a preparation method thereof. High dielectric constant material gel and aluminum oxide gel are prepared by a sol-gel method respectively; through a spin-coating technology, a high dielectric constant thin film and an aluminum oxide film are successively formed on a base; and the spin-coating process is repeated to prepare a plurality of high dielectric constant thin film-aluminum oxide laminated structure insulating films. According to the high dielectric constant thin film-aluminum oxide laminated structure insulating film, Al2O3 has a relatively large forbidden band gap; by the laminated structure, doping of high-dielectric and wide-band gap materials is achieved; the Al2O3 layer plays a role in preventing a current carrier from transmitting to another layer of high dielectric constant thin film from one layer of high dielectric constant thin film, so as to suppress leakage current; in the laminated structure, the heat stability of each high dielectric constant thin film can also be improved by the Al2O3; and the problems such as deflect accumulation and leakage channels caused by insulating layer crystallization are effectively reduced. The high dielectric constant thin film-aluminum oxide laminate structure insulating film is simple in preparation method, cheap in equipment, low in cost and beneficial to large-scale production.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a high dielectric constant film-alumina laminate structure insulating film and a sol-gel preparation method thereof. Background technique [0002] For the insulating layer of thin film transistors, SiO is traditionally used. 2 Or SiON, but with the development of small devices, when SiO 2 When the insulating layer is thinned to a certain thickness, such as when SiO 2 When it is less than 2nm, its gate leakage current is as high as 1A / cm at a gate voltage of 1V due to the direct tunneling effect of electrons 2 , and the power loss of the circuit will also increase to an unacceptable level. Since the 1990s, SiO 2 The application limit of insulating layer materials has been reached, and researchers began to search for high dielectric constant materials that can be used as substitutes. A material with a high dielectric constant is selected as the insulating layer of the...

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Problems solved by technology

Since the vacuum preparation method requires expensive vacuum equipment and harsh production conditions, it has many disadvantages such as high cost, low utilization rate of raw materials, and fixed components.

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