High dielectric constant thin film-aluminum oxide laminated structure insulating film and preparation method thereof

A technology of high dielectric constant and high dielectric constant materials, applied in the field of microelectronics, can solve problems such as harsh production conditions, high cost, and low utilization rate of raw materials

Active Publication Date: 2015-12-16
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the vacuum preparation method requires expensive vacuum equipment and harsh production conditions,

Method used

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  • High dielectric constant thin film-aluminum oxide laminated structure insulating film and preparation method thereof
  • High dielectric constant thin film-aluminum oxide laminated structure insulating film and preparation method thereof
  • High dielectric constant thin film-aluminum oxide laminated structure insulating film and preparation method thereof

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preparation example Construction

[0031] The preparation method of the high dielectric constant film-alumina laminate structure insulating film of the present invention comprises:

[0032] a. Preparation of high dielectric constant material precursor sol-gel: the solution containing high dielectric constant elements is dissolved in ethylene glycol methyl ether solution to form a precursor solution containing high dielectric constant elements, the high dielectric constant The molar concentration of constant elements is not more than 0.3M; after the solution containing high dielectric constant elements and ethylene glycol methyl ether solution are mixed evenly, add deionized water, and the molar concentration ratio of deionized water and high dielectric constant element ions is not greater than 5:1; then, stand still; after the deionized water and the precursor solution containing high dielectric constant elements are mixed evenly, monoethanolamine is added dropwise, and the molar concentration ratio of monoethan...

Embodiment 1

[0038] The following is attached Figure 1-5 The preparation method of the titanium oxide-alumina laminate structure insulating film of the present invention will be further described in detail with specific examples. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0039] In this embodiment, in the laminated structure, both the bottom layer and the top layer are titanium oxide high dielectric constant films; the preparation method of the titanium oxide-alumina laminated structure insulating film includes:

[0040] a. see figure 1 ,TiO 2 Precursor sol-gel preparation: the TiCl 4 Dissolved in ethylene glycol methyl ether solution to form Ti precursor solution, TiCl 4 The molar concentration is not more than 0.3M, preferably 0.05M; after stirring at room temperature, TiCl 4 After mixing with ethylene glycol methy...

Embodiment 2

[0053] In this embodiment, the preparation of a zirconia-alumina laminated structure insulating film is taken as an example for illustration; the preparation method of a zirconia-alumina laminated structure insulating film includes: a.ZrO 2 Preparation of precursor sol-gel; b.Al 2 o 3 Preparation of precursor sol-gel; c. Provide a substrate, adopt spin-coating process to ZrO 2 The precursor gel is spin-coated on the surface of the substrate; then, the ZrO spin-coated on the substrate is baked 2 Precursor gel, and then, through the annealing process, the ZrO on the substrate 2 Precursor gels to form ZrO 2 thin film; d. Spin-coating Al 2 o 3 Precursor gel spin-coated on ZrO 2 film surface; then, baked and spin-coated on ZrO 2 Al on the film surface 2 o 3 precursor gel, and then, through an annealing process, the ZrO 2 Al on the film surface 2 o 3 Precursor gels to form Al 2 o 3 Thin film; e. Repeat c-d to obtain ZrO on the substrate 2 -Al 2 o 3 A laminated struc...

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Abstract

The invention provides a high dielectric constant thin film-aluminum oxide laminated structure insulating film and a preparation method thereof. High dielectric constant material gel and aluminum oxide gel are prepared by a sol-gel method respectively; through a spin-coating technology, a high dielectric constant thin film and an aluminum oxide film are successively formed on a base; and the spin-coating process is repeated to prepare a plurality of high dielectric constant thin film-aluminum oxide laminated structure insulating films. According to the high dielectric constant thin film-aluminum oxide laminated structure insulating film, Al2O3 has a relatively large forbidden band gap; by the laminated structure, doping of high-dielectric and wide-band gap materials is achieved; the Al2O3 layer plays a role in preventing a current carrier from transmitting to another layer of high dielectric constant thin film from one layer of high dielectric constant thin film, so as to suppress leakage current; in the laminated structure, the heat stability of each high dielectric constant thin film can also be improved by the Al2O3; and the problems such as deflect accumulation and leakage channels caused by insulating layer crystallization are effectively reduced. The high dielectric constant thin film-aluminum oxide laminate structure insulating film is simple in preparation method, cheap in equipment, low in cost and beneficial to large-scale production.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a high dielectric constant film-alumina laminate structure insulating film and a sol-gel preparation method thereof. Background technique [0002] For the insulating layer of thin film transistors, SiO is traditionally used. 2 Or SiON, but with the development of small devices, when SiO 2 When the insulating layer is thinned to a certain thickness, such as when SiO 2 When it is less than 2nm, its gate leakage current is as high as 1A / cm at a gate voltage of 1V due to the direct tunneling effect of electrons 2 , and the power loss of the circuit will also increase to an unacceptable level. Since the 1990s, SiO 2 The application limit of insulating layer materials has been reached, and researchers began to search for high dielectric constant materials that can be used as substitutes. A material with a high dielectric constant is selected as the insulating layer of the...

Claims

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Application Information

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IPC IPC(8): H01L21/31
CPCH01L21/02178H01L21/022H01L21/31
Inventor 彭娟胡少坚
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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