Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light-emitting diode preparation method and light-emitting diode

A technology of light-emitting diodes and connecting layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of reducing the recombination efficiency of holes and electrons

Active Publication Date: 2020-02-21
ELEC TECH OPTOELECTRONICS TECHWUHUCO
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a light-emitting diode preparation method and the led

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting diode preparation method and light-emitting diode
  • Light-emitting diode preparation method and light-emitting diode
  • Light-emitting diode preparation method and light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail through the following embodiments and in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0032] The serial numbers assigned to components in this document, such as "first", "second", etc., are only used to distinguish the described objects, and do not have any sequence or technical meaning. The "connection" and "connection" mentioned in this application all include direct and indirect connection (connection) unless otherwise specified. In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom"...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a light-emitting diode preparation method and a light-emitting diode. When a trimethyl gallium layer grows, the NH3 flow is increased, and the H2 flow is decreased, so that thegrowth speed of trimethyl gallium is relatively high and is controlled to be 1 / 3-1 / 5 of the growth speed of an N-type semiconductor layer; and when a triethyl gallium layer grows, the NH3 flow is reduced, and the H2 flow is increased, so that the growth speed of the triethyl gallium is low and is about 1 / 10-1 / 20 of the growth speed of the trimethyl gallium layer. By controlling the growth speed ofthe triethyl gallium layer, surface atoms can be fully recombined; moreover, with the growth of triethyl gallium and increasing of the amount of H2, the content of C is reduced, so that V-pits are reduced, and the defect density is reduced; through S20 and S30, the defects caused by too fast growth of V-pits are avoided, the epitaxial growth quality is improved, the surface appearance of the epitaxial wafer is normal, and the defects caused by excessive V-pits are reduced; and the epitaxial wafer is not easy to extend to a quantum well layer, so that the growth quality of the multi-quantum well layer is further improved, and the recombination efficiency of holes and electrons is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a method for preparing a light emitting diode and the light emitting diode. Background technique [0002] Photoelectric devices such as light-emitting diodes made of nitride material systems are widely used in solid-state displays, lighting and signal lights because of their advantages such as small size, low energy consumption, long life, and low driving voltage. Because gallium nitride-based epitaxy has been matured and mass-produced for many years, the internal quantum efficiency has been greatly improved in recent years. However, in order to achieve higher commercial benefits, the key to be solved is how to improve the output yield of epitaxy and chips. , Reducing production costs and improving the consistency of epitaxial wafer output is one of the key points to reduce production costs from a technical perspective. [0003] However, the traditional light-em...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/007H01L33/06
Inventor 王晟
Owner ELEC TECH OPTOELECTRONICS TECHWUHUCO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com