Epitaxial wafer of light emitting diode and manufacturing method thereof

A technology of a light-emitting diode and a manufacturing method, which is applied in the field of optoelectronics and can solve the problems of low light extraction efficiency of deep-ultraviolet light-emitting diodes and the like

Active Publication Date: 2021-03-09
HC SEMITEK ZHEJIANG CO LTD
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  • Claims
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Problems solved by technology

However, the band gap of the p-type GaN material is narrow, and its absorption rate for the deep ultraviolet light band is quite high, which will easily cause the photons of the deep ultraviolet light-emitting diode to be absorbed by the p-type GaN material, making the light extraction efficiency of the deep ultraviolet light-emitting diode very low

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  • Epitaxial wafer of light emitting diode and manufacturing method thereof
  • Epitaxial wafer of light emitting diode and manufacturing method thereof
  • Epitaxial wafer of light emitting diode and manufacturing method thereof

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Embodiment Construction

[0026] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be optionally described in detail below in conjunction with the accompanying drawings.

[0027] figure 1 It is a schematic structural diagram of an epitaxial wafer of a light emitting diode provided by an embodiment of the present disclosure. The light emitting diode is an ultraviolet light emitting diode. Such as figure 1 As shown, the epitaxial wafer includes a substrate 10 and a buffer layer 20 , an n-type AlGaN layer 50 , an active layer 60 , a p-type barrier layer 70 and a p-type GaN layer 80 sequentially stacked on the substrate 10 .

[0028] In the disclosed embodiment, when growing the p-type GaN layer 80 , trimethylgallium and triethylgallium are alternately used as the gallium source.

[0029] By growing the p-type GaN layer on the p-type barrier layer, trimethylgallium and triethylgallium are alternate...

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Abstract

The invention discloses an epitaxial wafer of a light emitting diode and a manufacturing method thereof, and belongs to the technical field of photoelectrons. The manufacturing method comprises the following steps: providing a substrate; sequentially growing a buffer layer, an n-type AlGaN layer, an active layer and a p-type barrier layer on the substrate; and alternately adopting trimethyl gallium and triethyl gallium as a gallium source, and growing a p-type GaN layer on the p-type barrier layer. When trimethyl gallium serves as a gallium source for growth, the grown surface flatness is low,surface coarsening is facilitated, total reflection of light can be reduced, scattering of the light is improved, and when triethyl gallium serves as the gallium source for growth, a film formed through growth has high crystal quality, Mg doping is facilitated, the hole concentration can be improved, and the improvement of luminous efficiency is facilitated. By reducing the total reflection of light, improving the scattering of light and improving the concentration of holes, the light extraction efficiency of the deep ultraviolet light-emitting diode is improved on the whole.

Description

technical field [0001] The disclosure relates to the field of optoelectronic technology, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens , signal lights, backlight, toys and other fields. The core structure of the LED is the epitaxial wafer, and the production of the epitaxial wafer has a great influence on the photoelectric characteristics of the LED. [0003] An epitaxial wafer generally includes a buffer layer, an n-type layer, an active layer, a p-type barrier layer, and a p-type layer. [0004] P-type AlGaN is more suitable as the material for making the p-type layer of deep ultraviolet light-emitting d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/04H01L33/12H01L33/22
CPCH01L33/007H01L33/04H01L33/12H01L33/22
Inventor 丁涛龚程成尹涌梅劲
Owner HC SEMITEK ZHEJIANG CO LTD
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