Manufacturing method of epitaxial wafer of light emitting diode

Abstract

The invention discloses a manufacturing method of an epitaxial wafer of a light emitting diode, and belongs to the technical field of semiconductors. The manufacturing method comprises the following steps: providing a substrate; growing a buffer layer on the substrate; growing a 3D nucleation layer on the buffer layer; during the growth of the 3D nucleation layer, continuously feeding ammonia intoa reaction chamber, and intermittently feeding trimethylgallium; and growing an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer sequentially on the 3D nucleation layer. The 3D nucleation layer adopts a segmented growth mode, that is, after the 3D nucleation layer grows for a period of time, the surface of the grown 3D nucleation layer is treated by the ammonia, which can reduce the existence of elemental Ga on the surface of the 3D nucleation layer, so that the wafer quality of the 3D nucleation layer is improved, the antistatic capacity of an LED (Light Emitting Diode) under a large current density is increased, and the light emitting efficiency of the LED is finally improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a light-emitting diode epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate, a buffer layer stacked on the substrate, a 3D (three-dimensional, three-dimensional) nucleation layer, and an undoped GaN layer. , N-type layer, multiple quantum well layer and P-type layer. The 3D nucleation layer is a GaN layer. When growing the 3D nucleation layer, ammonia gas is usually used as the N source...

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Problems solved by technology

[0005] The surface of the 3D nucleation layer grown by the above method will have an excessive amount of unreacted Ga source remaining, and the residual Ga source will react with some areas (where the surface adsorption energy is large), resulting in a change in the surface morphology of the 3D nucleation layer, thereby The crystal quality of the grown 3D nucleation layer is poor, which affects the luminous efficiency of the LED

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