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Method for preparing ZnO transparent conductive film through metal organic chemical vapor deposition

A technology of transparent conductive film and coating chamber, which is used in gaseous chemical plating, metal material coating process, coating, etc.

Inactive Publication Date: 2011-06-22
SHANGHAI JUNTIAN TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0013] The current MOCVD technology and related equipment are not used to produce ZnO transparent conductive films. Therefore, how to use the advantages of MOCVD technology to produce ZnO transparent conductive films with excellent performance is the main problem of our research.

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  • Method for preparing ZnO transparent conductive film through metal organic chemical vapor deposition
  • Method for preparing ZnO transparent conductive film through metal organic chemical vapor deposition

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Embodiment Construction

[0027] Such as figure 1 As shown, the MOCVD process of the present invention for preparing a ZnO transparent conductive film is as follows:

[0028] 1. Preparation (s1): The glass sheet equipment is online;

[0029] 2. Cleaning (s2): The glass sheet is transferred to the glass cleaning system, cleaned by standard glass cleaning process, and dried;

[0030] 3. Optical inspection (s3): The cleaned glass sheet is sent to the online optical inspection system for inspection; it mainly inspects whether there are residual stains on the glass surface;

[0031] 4. The unqualified glass is returned to the cleaning system for cleaning;

[0032] 5. Coating (s4): The inspected glass is sent to the CVD coating room for coating, and the dimethyl zinc and oxygen are used as sources and sprayed on the heated glass through the nozzle. The dimethyl zinc is oxidized to produce ZnO; trimethyl gallium or Alumina is the doping source, Ga-doped ZnO (GZO) or aluminum-doped ZnO (AZO) can be obtained respective...

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Abstract

A method for preparing a ZnO transparent conductive film through metal organic chemical vapor deposition (MOCVD) comprises the following six steps: preparing, cleaning, optical detection, chemical vapor deposition (CVD) coating, product performance detection and finished product packaging, wherein the CVD coating method is as follows: in a CVD coating chamber, dimethylzinc and oxygen are used as sources to be sprayed on a heated glass sheet through nozzles and dimethylzinc is oxidized to generate ZnO. In the coating process, trimethylgallium or aluminum oxide can be used as dopant source to obtain gallium-doped ZnO (GZO) or aluminum-doped ZnO (AZO). The glass which is not qualified in the optical detection can be cleaned again; and the product which is not qualified in the product performance detection can be sent to a corrosive tank with hydrochloric acid to erode off the ZnO on the surface of glass and recycle glass. The method of the invention fully considers each link of the industrial production of the ZnO transparent conductive film and has the advantages of excellent product performance and capability of industrialization.

Description

Technical field: [0001] The invention belongs to the field of new material preparation, and relates to a ZnO transparent conductive film that can replace ITO for flat panel display, in particular to a method for preparing the ZnO transparent conductive film by using MOCVD technology. Background technique: [0002] In the current flat panel display industry, ITO (tin-doped indium oxide) has become an almost indispensable material for making transparent conductive electrodes due to its excellent conductivity and good visible light transmittance. However, due to many factors such as indium itself is rare, expensive, and toxic, countries all over the world are looking for a new type of transparent conductive material that can replace ITO, and ZnO is one of them. [0003] The performance of the transparent conductive film has a lot to do with its preparation process. The preparation methods of ZnO transparent conductive film include magnetron sputtering method, spraying thermal decompo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/52
Inventor 孙小卫赵俊亮
Owner SHANGHAI JUNTIAN TECH
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