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Exhaust gas recovery method and device for LED epitaxial wafer preparation process

A technology for LED epitaxial wafer and waste gas recovery, which is applied in the preparation/separation of ammonia, chemical instruments and methods, refrigeration and liquefaction, etc., can solve the problems of energy waste, low quality of ammonia water, etc., to avoid waste, and the process is simple and good. Environmentally friendly and economical effects

Pending Publication Date: 2019-08-20
上海跃绅能源科技有限公司
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  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method and device for recovering waste gas from the LED epitaxial wafer preparation process, aiming at solving the technical problems of waste of energy and low quality of recovered ammonia water in the prior art for treating the tail gas of the LED epitaxial wafer preparation process

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  • Exhaust gas recovery method and device for LED epitaxial wafer preparation process
  • Exhaust gas recovery method and device for LED epitaxial wafer preparation process

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Embodiment

[0038] The exhaust gas discharged from the metal organic chemical vapor deposition process (MOCVD) in the LED epitaxial wafer production process is collected into the exhaust gas collection tank 1 through the exhaust gas collection pipeline, and the exhaust gas is passed into the dust filter 2 to remove particles in the exhaust gas Dust and other solid impurities obtain the first filtered exhaust gas to prevent particle dust from adversely affecting subsequent processing equipment.

[0039] Pass the first filtered exhaust gas into the exhaust compressor 3, pressurize the first filtered exhaust gas to 2.4Mpa, and heat the first filtered exhaust gas to a reaction temperature of 300°C through the heater 4, which can be an electric heater , can also be a combustion chamber, and then pass into the regenerator 5, the forward flow gas and the reacted counterflow gas exchange heat, recover heat energy, and then enter the reactor 6, under high temperature and high pressure conditions, t...

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Abstract

The invention relates to the technical field of exhaust gas recovery, in particular to an exhaust gas recovery method and a device for an LED epitaxial wafer preparation process. The recovery method includes collecting the exhaust gas of the LED epitaxial wafer preparation process and filtering the dust from the exhaust gas to obtain a first filter exhaust gas; performing pressurization and heating reaction on the first filtered exhaust gas, cooling and filtering to remove an MO source in the exhaust gas to obtain a second filtered exhaust gas; carrying out condensation separation and rectification on the second filtered tail gas to obtain ammonia removal tail gas and industrial liquid ammonia; spraying the ammonia removal tail gas with water, performing molecular sieve dehydration and pressure swing adsorption to obtain high-purity hydrogen. The process of the recovery method is simple, and ammonia, hydrogen and trimethylgallium (TMGa) in the exhaust gas are recovered and utilized, sothat the waste of energy is avoided, the exhaust gas emission is reduced, and the method has good environmental protection and economy.

Description

technical field [0001] The invention relates to the technical field of exhaust gas recovery, in particular to a method and device for recovering exhaust gas from an LED epitaxial wafer preparation process. Background technique [0002] In the production process of LED epitaxial wafers, metal-organic chemical vapor deposition (MOCVD) process is mostly used, and the process temperature is 700-1100°C. Raw materials such as trimethylgallium and ammonia gas are introduced into the MOCVD system through different pipelines. In the reaction chamber, it is decomposed into simple substances such as gallium and nitrogen, and deposited on a sapphire substrate to grow thin film single crystals of gallium nitride and its alloys. The main source of pollution in the production process of LED epitaxial wafers is the ammonia-containing waste gas emitted by the MOCVD system. The approximate composition of each component is as follows: [0003] Element Volume fraction H2 50％ ...

Claims

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Application Information

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IPC IPC(8): C01B3/56C01B21/06C01C1/12F25J3/02
CPCC01B3/56C01C1/12C01B21/0632F25J3/0276C01B2203/042
Inventor 王耀亮王冶秋
Owner 上海跃绅能源科技有限公司
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