Method for producing amorphous indium gallium zinc oxide thin film by atomic layer deposition

Abstract

The invention belongs to the technical field of semiconductor integrated circuits, and particularly discloses a method for growing an amorphous indium gallium zinc oxide thin film by the ALD (atomic layer deposition) technique. The method mainly includes the steps: using diethylzinc as a reaction source for growing ZnO, and using water or hydrogen peroxide as oxidant; using Ga2 (NMe2)6 as a reaction source for growing Ga2O3, and using water as oxidant; growing In2O3 for multiple cycles, using cyclopentadienylindium as a reaction source for growing In2O3, and using mixture of water and oxygen or ozone as oxidant; and repeating the steps for multiple times as required to obtain an IGZO thin film of certain thickness. The temperature of a reaction chamber in growth is controlled within a range of from 100 DEG C to 300 DEG C. In addition, the steps above are free to order and combine. The IGZO thin film grown by the method is high in uniformity, density and shape retention, suitable for large-area disposition, and widely applicable to the fields of thin film transistors, thin film transistor memories and transparent electronic devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and specifically relates to a method for growing IGZO (amorphous indium gallium zinc oxide) thin films by atomic layer deposition (ALD) for thin film transistors (TFTs), TFT tube memories and transparent electronic devices. method. Background technique [0002] In recent years, due to intensified competition, the display market has shown a trend of accelerated growth. As an important component of the display, TFT has received more and more attention and research, especially the TFT device using amorphous oxide semiconductor as the conductive channel has become a research hotspot at home and abroad. Compared with polysilicon or organic thin-film transistors, transistors using amorphous oxide semiconductors as conductive channels have outstanding advantages such as high carrier mobility, high optical transparency, and more stable threshold voltage. As a transparent oxide...

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Problems solved by technology

However, the quality of IGZO films deposited by these methods is poor, usually containing some oxygen vacancies, and requires some post-processing, such as thermal annealing, etc.

These post-annealing treatments are usually performed at relatively high temperatures, thus limiting its application in the field of devices based on flexible substrates and glass substrates

In addition, high temperature annealing will also have a certain negative impact on the performance and reliability of the device

On the other hand, it is difficult to obtain a thin film with uniform surface thickness and atomic composition over a large area using the above method, which will adversely affect the uniformity of the electrical properties of the entire device.

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