ZnO:B film grown by utilizing MOCVD (Metal Organic Chemical Vapor Deposition) gradient doping technology and application

A gradient doping and technical technology, applied in gaseous chemical plating, coating, electrical components, etc., can solve the problems affecting the performance of Si thin film batteries, low electron mobility, etc., achieve good electrical properties, improve transmittance, The effect of improving performance

Inactive Publication Date: 2011-08-31
NANKAI UNIV
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  • Abstract
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Problems solved by technology

[0007] The purpose of the present invention is to provide a kind of use MOCVD gradient doping technology to grow ZnO:B thin film and application according to the above technical analysis, to solve the problem of free carrier absorption in the near-infrared region caused by the lower electron mobility of ordinary transparent conductive thin films, thereby affecting Problems in Improving the Performance of Si Thin Film Cells and Applying It to Si Thin Film Solar Cells

Method used

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  • ZnO:B film grown by utilizing MOCVD (Metal Organic Chemical Vapor Deposition) gradient doping technology and application
  • ZnO:B film grown by utilizing MOCVD (Metal Organic Chemical Vapor Deposition) gradient doping technology and application
  • ZnO:B film grown by utilizing MOCVD (Metal Organic Chemical Vapor Deposition) gradient doping technology and application

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Embodiment 1

[0018] A method of growing ZnO:B film by using MOCVD gradient doping technology, which is realized by the following steps:

[0019] 1) Using MOCVD technology, diethyl zinc and water with a purity of 99.995% are used as raw materials to grow undoped B (0% doping ratio) textured ZnO thin films on glass substrates. The substrate temperature is 150°C. Thickness 800nm;

[0020] 2) Using MOCVD technology, diethyl zinc and water with a purity of 99.995% are used as raw materials to grow dopant gas B on the above glass substrate 2 h 6 A low-doped textured ZnO thin film with a flux ratio of 1.0%, a substrate temperature of 150 °C, and a film thickness of 1200 nm.

[0021] Apply the above obtained glass / undoped or low B-doped ZnO / normal B-doped ZnO film (that is, MOCVD-gradient doping-ZnO) to pin-type a-Si / μc-Si stacked thin film solar cells, which Solar cell structure such as figure 2 shown. Firstly, a textured structure BZO / high conductivity HGZO thin film is grown on a glass su...

Embodiment 2

[0023] A method of growing ZnO:B film by using MOCVD gradient doping technology, which is realized by the following steps:

[0024] 1) Using MOCVD technology, diethyl zinc and water with a purity of 99.995% are used as raw materials to grow undoped B (0% doping ratio) textured ZnO thin films on glass substrates. The substrate temperature is 150°C. Thickness 800nm;

[0025] 2）Using MOCVD technology, diethyl zinc and water with a purity of 99.995% are used as raw materials to grow dopant gas B on the above glass substrate 2 h 6 B with a flow ratio of 0.3% 2 h 6 Low-doped textured ZnO film, substrate temperature 150°C, film thickness 300nm;

[0026] 3) Using MOCVD technology, diethyl zinc and water with a purity of 99.995% are used as raw materials to grow dopant gas B on the above glass substrate 2 h 6 A low-doped texturized ZnO thin film with a flux ratio of 1.0%, a substrate temperature of 150 °C, and a film thickness of 800 nm.

[0027] Apply glass / undoped or low B-do...

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Abstract

The invention relates to a ZnO:B film grown by utilizing an MOCVD (Metal Organic Chemical Vapor Deposition) gradient doping technology. By utilizing the MOCVD technology, using a glass base sheet as a substrate, using diethylzinc and water as raw materials and using borane as doping gas, a ZnO transparent conducting film without doping B or doping less B grows on the glass base sheet; then, ZnO grows by sectional gradient doping on the basis of the film by utilizing the MOCVD technology as well to prepare the glass base sheet/undoped B or low B doped ZnO/normal B doped ZnO transparent conducting film. The invention has the advantage of realizing the ZnO film with large grain size and high visible light and near-infrared transmissivity by growing undoped or low B doped ZnO film at the initial period and then adopting doping under the normal condition. The film is suitable for being applied to a p-i-n type Si-based film solar cell, especially an a-Si/muc-Si laminated film solar cell andcan further improve the performance of an Si film cell.

Description

technical field [0001] The invention belongs to the field of silicon thin-film solar cells, in particular to a ZnO:B thin-film grown by MOCVD gradient doping technology and its application. Background technique [0002] The optical bandwidth of hydrogenated amorphous silicon (a-Si:H) is about 1.7 eV, and its absorption coefficient is higher in the short-wave direction, while the optical bandwidth of hydrogenated microcrystalline silicon (μc-Si:H) is about 1.1 eV, and its absorption coefficient The coefficient is higher in the long-wave direction, and can absorb into the near-infrared long-wave region, and the absorption wavelength can be extended to 1100nm, which makes better use of the solar spectrum. In addition, compared with amorphous silicon thin film materials, microcrystalline silicon thin film materials have a higher degree of structural order. Therefore, microcrystalline silicon thin film batteries have good device stability without obvious degradation. It can be s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44H01L31/18H01L31/20
CPCY02P70/50
Inventor 陈新亮耿新华王斐闫聪博张德坤孙建魏长春张建军张晓丹赵颖
Owner NANKAI UNIV
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