Method for preparing ultra-thin copper seed crystal layer on diffusion barrier layer and application thereof

A technology of copper seed layer and barrier layer, which is applied in coating, metal material coating process, semiconductor/solid-state device manufacturing, etc., can solve problems such as difficult film uniformity, improve performance and reliability, increase precision Effect of ability to control, ability to improve
CN103579100AInactive Publication Date: 2014-02-12FUDAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
FUDAN UNIV
Publication Date
2014-02-12
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and particularly relates to a method for preparing an ultra-thin copper seed crystal layer on a diffusion barrier layer and an application thereof. According to the method, an atomic layer deposition method is used for preparing the ultra-thin copper seed crystal layer, and the method includes the following steps that Cu (C5HF6O2)2 is adsorbed on the diffusion barrier layer, and the air flow is 100-500 standard milliliter per minute; diethylzinc is adsorbed on the diffusion barrier layer, and the air flow is 100-500 standard milliliter per minute. The method has the advantages that the ALD method is adopted for growing the copper seed crystal layer, under a lower process temperature, only a film with the thickness about 0.02-1nm is formed in each growth cycle, the thickness of the copper seed crystal layer can be effectively controlled, the groove filling performance is good, the adhesion property of electroplated copper and the copper seed crystal layer is improved, the reliability of the method in the integrated circuit copper interconnection application is maintained, and the method provides an ideal interconnection technology solution to technology nodes with the thickness below 22nm.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and in particular relates to a manufacturing method and application of an ultra-thin copper seed layer on a diffusion barrier layer. Background technique

[0002] With the development of very large-scale integration (VLSI) and ultra-large-scale integration (ULSI), the degree of integration continues to increase, and circuit components are becoming denser. Chip interconnection has become a key factor affecting chip performance. However, the scaling down of interconnect lines in VLSI and ULSI technologies has placed additional demands on processing capabilities due to size constraints of the circuitry. Such requirements include precise machining of multi-layered, high-aspect-ratio structural features. The reliability of these interconnect structures plays a very important role in the success of VLSI and ULSI and the improvement of circuit density.

[0003] A...

Claims

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