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Method for plating tungsten on diamond powder surface

A diamond powder and body surface technology, which is applied in gaseous chemical plating, metal processing equipment, metal material coating technology, etc., can solve the problem of limited powder quantity, and achieve the effect of simple equipment, high purity of coating, and high efficiency

Inactive Publication Date: 2017-03-22
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods of diamond metallization include chemical vapor deposition plating, electroless plating and electroplating, salt bath plating, diffusion plating, magnetron sputtering plating, etc., while electroplating or electroless plating methods are relatively high-tech, and the solution ratio must be precisely controlled. And other impurities will be introduced, and the amount of powder plated each time by magnetron sputtering and double cathode plasma plating is limited

Method used

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  • Method for plating tungsten on diamond powder surface
  • Method for plating tungsten on diamond powder surface
  • Method for plating tungsten on diamond powder surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Spread about 2g of the dried diamond particles evenly on the heating platform, then put the platform in the heating furnace, heat the temperature to 550°C in a hydrogen atmosphere and keep it for 0.5h; press H 2 The flow rate is 1L / min, WF 6 Reactive gas was introduced at a flow rate of 1g / min; the platform was kept vibrating during the deposition process. Turn off WF after 2min reaction 6 Incubate for another 0.5h. After slowly cooling to room temperature, take out the diamond powder. Observed at low magnification, it is found that the tungsten coating is uniform and compact (thickness about 5um), the coating structure is single, and the coating has high purity.

Embodiment 2

[0028] Spread about 2g of the dried diamond particles evenly on the heating platform, then place the platform in the heating furnace, heat the temperature to 620℃ in a hydrogen atmosphere, and keep it for 0.5h, press H 2 The flow rate is 1L / min, WF 6 Consumption 2g / min, turn off WF after 2min reaction 6 Incubate for another 0.5h. Keep the platform vibrating during the deposition process. After slowly cooling to room temperature, take out the diamond powder. Observed at low magnification, it is found that the tungsten coating is uniform and compact (thickness about 10um), the coating structure is single, and it has high purity.

Embodiment 3

[0030] Spread about 2g of the dried diamond particles evenly on the heating platform, then put the platform in the heating furnace, heat the temperature to 700℃ in a hydrogen atmosphere, and keep it for 0.5h, press H 2 The flow rate is 1L / min, WF 6 Consumption 3g / min, turn off WF after 2min reaction 6 Incubate for another 0.5h. Keep the platform vibrating during the deposition process. After slowly cooling to room temperature, take out the diamond powder. Observed at low magnification, it is found that the tungsten coating is uniform and compact (thickness about 15um), the coating structure is single, and it has high purity.

[0031] The coating is well bonded to the substrate (such as Figure 5 ), the mass fraction after tungsten plating of Example 3 is 8.77% diamond powder and copper powder (200 mesh ~ 250 mesh) hot press sintering (sintering parameters: 760℃, 50KN, 5 minutes) 24×7× For the 6mm block, the thermal expansion coefficient of the briquette is reduced and the bendin...

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Abstract

The invention discloses a method for plating tungsten on a diamond powder surface, and belongs to the technical field of coating. The method adopts a chemical vapor-deposition tungsten coating method, and belongs to the technical field of coating. The method comprises the following steps of: carrying out treatment of removing organic substances, removing oil, roughening and drying on the diamond powder surface; uniformly spreading the dried diamond powder on a heating platform, putting the platform in a heating furnace, and carrying out temperature preserving for 10-60 minutes after heating the platform to a temperature ranging from 550 DEG C to 700 DEG C under a hydrogen-gas atmosphere; within a deposition temperature range from 550 DEG C to 700 DEG C, forming a tungsten coating on the diamond powder surface by utilizing reduction reaction between tungsten hexafluoride and hydrogen gas; and slowly cooling the tungsten coating to the room temperature. After chemical vapor-deposition plating, the uniform compact coating can be formed on the diamond powder surface, the coating is low in impurity content, and a phase of the coating is alpha-W; after being subjected to hot-pressing sintering, the tungsten-plated diamond powder is improved by 38.6% in bending strength compared with a diamond sample not plated with tungsten; and moreover, a thermal expansion coefficient of a pressure block is reduced to some extent in comparison with that of the pressure block with common diamond.

Description

Technical field [0001] The invention belongs to the technical field of film coating, and particularly relates to a method for pretreatment of powder surface and CVD tungsten plating on powder surface, and can be used for pretreatment of diamond abrasive tools and electronic packaging materials. [0002] technical background [0003] Diamond has extremely high hardness, good corrosion resistance and abrasion resistance and low thermal expansion coefficient. It has great application potential in the field of machinery and drilling, and diamond has unparalleled thermal conductivity (2000W·m at room temperature). -1 , About 5 times that of the commonly used excellent thermal conductor copper) and the economic significance of copper in the industry promotes diamond / copper composite materials to become the research focus of the third generation of high-performance electronic packaging materials. At present, diamond products are mainly made by sintering with metal powder. Because diamond ...

Claims

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Application Information

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IPC IPC(8): C23C16/14C23C16/44B22F1/02
CPCC23C16/14C23C16/4417B22F1/17
Inventor 马捷王元元魏建忠黄新壮
Owner BEIJING UNIV OF TECH
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