The invention discloses a manufacturing method of a
metal gate
transistor, which comprises the following steps of: completing a
metal gate process flow to form a
metal gate which contains Cl; and forming an interlayer film. And forming a
contact hole, wherein the step of forming the
contact hole comprises the sub-steps of performing graphical
etching to form a
contact hole opening. And performing pre-cleaning by using F-containing plasmas, wherein F replaces Cl in the
metal gate under the action of the plasmas and enables the Cl to be diffused to the bottom surface of the opening of the contact hole. And NH3
plasma processing is carried out to consume Cl in the
metal gate. And an
adhesion barrier layer is deposited, wherein the
adhesion barrier layer comprises a first Ti layer and a second
TiN layer which are stacked in sequence. The content of Cl in the
metal gate is reduced to ensure that in the metal silicification reaction, the first Ti layer at the top of the metal gate does not form a cavity under the action of Cl. And filling metal in the contact hole opening to form a contact hole. The stability of the metal gate can be improved.