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Method for preparing Mn-doped bismuth sodium titanate-barium titanate film

A technology of bismuth sodium titanate and barium titanate, which is applied in the field of preparation of bismuth sodium titanate-barium titanate thin film, can solve environmental hazards and other problems, and achieve the effects of convenient operation, good repeatability and simple preparation

Inactive Publication Date: 2012-10-17
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is worth noting that these piezoelectric systems contain a large amount of lead elements (more than 60% by mass), which can easily cause environmental hazards during the preparation process.

Method used

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  • Method for preparing Mn-doped bismuth sodium titanate-barium titanate film
  • Method for preparing Mn-doped bismuth sodium titanate-barium titanate film
  • Method for preparing Mn-doped bismuth sodium titanate-barium titanate film

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Experimental program
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Effect test

Embodiment 1

[0028] (1) Preparation of the target: with high-purity Bi 2 o 3 , Na 2 CO 3 , BaCO 3 , TiO 2 As raw material, according to the chemical formula 0.935Bi 0.5 Na 0.5 TiO 3 -0.065BaTiO 3 Weigh the stoichiometric ratio of -0.005Mn, wet grind the raw materials with zirconium balls in absolute ethanol for 6 hours, then dry, press into tablets, and calcined at 850°C for 2 hours to obtain perovskite structure powder ; The obtained perovskite structure powder is ball-milled twice, dried, pressed into tablets, and sintered at 1200° C. for 2 hours to obtain the target material.

[0029] (2) Prepare thin films by pulsed laser deposition system, adjust target-base distance to 5.5cm, sputtering temperature at 650°C, 680°C and 700°C, power at 300mJ, frequency at 8Hz, feed oxygen, adjust air pressure to 30Pa, sputter for 40min, then Anneal at the deposition temperature for 30min, keep the oxygen pressure and naturally cool to room temperature to prepare the Mn-doped sodium bismuth tit...

Embodiment 2

[0032] The steps of this embodiment are basically the same as those of Embodiment 1, the difference is that according to the chemical formula 0.97Bi 0.5 Na 0.5 TiO 3 -0.03BaTiO 3 -0.005Mn for batching.

Embodiment 3

[0034] The steps of this embodiment are basically the same as those of Embodiment 1, the difference is that according to the chemical formula 0.96Bi 0.5 Na 0.5 TiO 3 -0.04BaTiO 3 -0.005Mn for batching.

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Abstract

The invention discloses a method for preparing a Mn-doped bismuth sodium titanate-barium titanate film, comprising the following steps that: high-purity Bi2O3, Na2CO3, BaCO3 and TiO2 are taken as the raw materials and subjected to wet milling by a zirconium ball in absolute ethyl alcohol, drying, tabletting and calcination at a certain air pressure to obtain perovskite structure powder; the obtained perovskite structure powder is subjected to secondary ball milling, drying, tabletting and heat preservation for 1-4 hours at the temperature of 1200 DEG C to obtain a target material by sintering; the target material and the substrate are installed and the target-substrate distance, the sputtering temperature, the power and the frequency are adjusted; after the sputtering, in-situ annealing is performed, the oxygen pressure is maintained and the temperature is lowered to room temperature by naturally cooling to prepare the Mn-doped bismuth sodium titanate-barium titanate film. The orientation and the thickness of the film can be adjusted by technological parameters and the prepared lead-free piezoelectric film shows better ferroelectric and dielectric properties. The method has the advantages of convenience in operation and good repeatability.

Description

technical field [0001] The invention relates to a method for preparing an orientation-controllable and environment-friendly lead-free piezoelectric film, in particular to a method for preparing a Mn-doped sodium bismuth titanate-barium titanate film, which belongs to the field of ferroelectric film materials. Background technique [0002] From the 1980s to the present, the rapid development of semiconductor device technology and thin film preparation technology has aroused people's strong interest in the application of ferroelectric thin films in memory, micro-electromechanical systems, high-frequency microelectronics and other fields. The research on the preparation of ferroelectric piezoelectric thin films has been carried out, and the application fields cover communication, sensing, medical treatment, aerospace, machinery, biology and many other fields. In the application of ferroelectric memory, micro sensor, driver and so on, the piezoelectric thin film material mainly ...

Claims

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Application Information

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IPC IPC(8): C04B35/622C04B35/475
Inventor 王飞飞石旺舟徐敏金成超姚其容
Owner SHANGHAI NORMAL UNIVERSITY
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