Composite thin film with mn doping to regulate resistance switching effect and preparation method thereof

A composite film and resistance switch technology, applied in the coating and other directions, can solve the problems that affect the characteristics of composite film resistance switching, restrict the practical application of materials, etc., and achieve the effects of suppressing valence fluctuations, improving ferromagnetism, and reducing leakage current.

Active Publication Date: 2021-10-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To improve BiFeO 3 The most common method for the multiferroic and ferromagnetic properties of thin films is to do multi-component co-ion doping and composite magnetic films, but when the magnetic film is added, it will affect the ferroelectricity of the upper film, which will further affect the resistance switching characteristics of the composite film. , restricting the practical application of the material

Method used

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  • Composite thin film with mn doping to regulate resistance switching effect and preparation method thereof
  • Composite thin film with mn doping to regulate resistance switching effect and preparation method thereof
  • Composite thin film with mn doping to regulate resistance switching effect and preparation method thereof

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preparation example Construction

[0033] The BGSFMC / C with resistive switching effect 1-x m x The preparation method of FO composite film, comprises the following steps:

[0034] Step 1: Dissolve cobalt nitrate, manganese acetate and ferric nitrate in ethylene glycol methyl ether in a molar ratio of (1-x):x:2, stir evenly, add acetic anhydride, continue stirring evenly, and obtain the bottom film precursor ;wherein x=0.1~0.7;

[0035] Step 2: Spin-coat the bottom layer film precursor solution on the FTO / glass substrate to obtain a wet film. After the wet film is evenly glued, it is baked at 190-195°C to obtain a dry film, and then annealed in air at 660-710°C , to obtain crystalline Co 1-x mn x Fe 2 o 4 film;

[0036] Step 3: The crystalline Co 1-x mn x Fe 2 o 4 The film was cooled to room temperature, and step 2 was repeated until the preset thickness was reached, that is, the underlying Co 1-x mn x Fe 2 o 4 film.

[0037] Step 4: Dissolve bismuth nitrate, gadolinium nitrate, strontium nitrate...

Embodiment 1

[0050] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0051] Step 2: Cobalt nitrate, manganese acetate and ferric nitrate are used as raw materials, dissolved in ethylene glycol methyl ether at a molar ratio of 0.9:0.1:2 (x=0.1), stirred for 30 minutes, then added with acetic anhydride, stirred for 90 minutes to obtain metal Stable bottom film precursor solution with a total ion concentration of 0.2mol / L; wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0052] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with a UV irradiator for 40 minutes to make the surface of the FTO / glass substrate reach atomic cleanliness, and then spin-coat the bottom layer film precursor solution on the FTO / glass substrate, and the uniform coating speed The temperature is 4000r / min, a...

Embodiment 2

[0057] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0058] Step 2: Cobalt nitrate, manganese acetate and ferric nitrate are used as raw materials, dissolved in ethylene glycol methyl ether at a molar ratio of 0.7:0.3:2 (x=0.3), stirred for 30 minutes, then added with acetic anhydride, stirred for 90 minutes to obtain metal Stable bottom film precursor solution with a total ion concentration of 0.2mol / L; wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0059] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate, and the coating speed is 4000r / min, the homogen...

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Abstract

The invention provides a kind of Mn-doped composite thin film and its preparation method for regulating and controlling the resistance switch effect, comprising an upper layer film and a bottom layer film compounded together; the chemical formula of the upper layer film is Bi 0.88 Gd 0.09 Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 , is a polycrystalline twisted perovskite structure, the space group is R3c; the chemical formula of the underlying film is Co 1‑x mn x Fe 2 o 4 , is a cubic inverse spinel structure, and the space group is Fd3m, where x=0.1~0.7. The Co 1‑x mn x Fe 2 o 4 thin film, and then prepare BGSFMC thin film by spin coating method and layer-by-layer annealing process, forming BGSFMC / C1‑xMxFO composite thin film. The composite thin film of the invention still has good ferroelectricity and resistance switching effect while increasing the ferromagnetism.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a composite thin film with Mn doping to regulate resistance switching effect and a preparation method thereof. Background technique [0002] With the rapid development of science and technology, the requirements for miniaturization and diversification of devices are getting higher and higher, which urgently requires the development of new materials with multiple functions to replace single-function materials to meet the development of multi-functional new materials. device requirements. Bismuth ferrite (BiFeO 3 , referred to as BFO), is currently the only single-phase multiferroic material that exists both ferroelectricity and antiferromagnetism at room temperature, and has a relatively high Curie temperature, Neel temperature and large remanent polarization. ERAM, spintronic devices, magnetoelectric memory units, optoelectronic devices and other fields have good application p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/70C03C2217/94C03C2218/116C03C2218/32
Inventor 谈国强薛敏涛柴正军任慧君夏傲刘云
Owner SHAANXI UNIV OF SCI & TECH
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