Doping semi-conductor nanocrystalline and preparation thereof

A nanocrystal and semiconductor technology, which is applied in the field of doped semiconductor nanocrystal and its preparation, can solve the problems of small coverage of fluorescence peak position, difficulty in doping elements, difficulty in controlling doping amount, etc., and achieves easy doping amount Control, avoid use, good effect of monodispersity

Inactive Publication Date: 2008-10-01
南京紫同纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, Mn-doped ZnSe is more researched, but the existing doping methods are mostly synthesized by injecting TBP/TOP-Se into TBP/TOP-Se after mixing and heating the Mn precursor and Zn precurs

Method used

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  • Doping semi-conductor nanocrystalline and preparation thereof
  • Doping semi-conductor nanocrystalline and preparation thereof
  • Doping semi-conductor nanocrystalline and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Get 0.02g (0.03mmol) of manganese stearate and 6g of octadecene and mix them into a 50ml three-neck bottle, heat to 100°C under nitrogen atmosphere and keep for 30 minutes, then rapidly heat up to 300°C and inject 4ml of 0.1M Se solution ( 1mmolSe and 3mmol octadecylamine dissolved in 10ml octadecene, the same below), cooled to 260°C for growth for one hour, then raised the temperature to 280°C and added dropwise 0.4ml 0.3M zinc stearate precursor solution (3mmol stearate Dissolve the acid in 10ml of octadecene, the same below), after reacting for 10 minutes, cool down to 270°C, add 0.4ml of zinc stearate, cool down to 260°C, add 0.4ml of zinc stearate, react for 10 minutes, cool down to 240°C and Add 1ml of zinc stearate precursor dropwise, then add 1.8ml of S solution (0.1M, 2mmol sulfur dissolved in 20ml of octadecene, the same below) and 0.6ml of zinc stearate mixed solution to grow according to the atomic layer epitaxial growth method The first layer, 2.4ml S and 0...

Embodiment 2

[0026] Take 0.05g (0.08mmol) of manganese stearate and 6g of octadecene, mix them into a 50mL three-neck bottle, heat to 100°C under nitrogen atmosphere and keep it for 30 minutes, then quickly raise the temperature to 300°C, inject 1ml of 0.1M Se solution, and cool down Grow at 260°C for one hour, then raise the temperature to 280°C and add 0.4ml of 0.3M zinc stearate precursor solution dropwise. After reacting for 10 minutes, cool down to 260°C and add 0.5ml of zinc stearate. Cool down to 240°C and add 1.6ml S (0.1M) and 0.5ml zinc stearate mixed solution to grow the first layer in turn according to the atomic layer epitaxy growth method, 2.0ml S and 0.7ml zinc stearate solution to grow the second layer, 2.5 The third layer was grown by ml S and 1ml zinc stearate solution, and finally MnSe / ZnSe / ZnS doped core-shell structure nanocrystals were formed. The interval between each addition was 10 minutes. After adding the last layer, reflux at 180°C for 1 hour . Samples were tak...

Embodiment 3

[0028]Take 0.015mmol of manganese oleate and 6g of octadecene, mix them into a 50ml three-neck bottle, heat to 100°C under nitrogen atmosphere and keep it for 30 minutes, then quickly raise the temperature to 250°C, inject 2ml of 0.05M Se solution, and raise the temperature to 280°C Grow for 90 minutes, then add 0.2ml of 0.3M zinc stearate precursor solution dropwise, react for 10 minutes, then cool down to 270°C, add 0.2ml of zinc stearate, cool down to 260°C, add 0.3ml of zinc stearate, and react for 10 minutes After cooling down to 240°C, add 0.5ml of zinc stearate precursor dropwise, then add 0.9ml of S solution (0.1M) and 0.3ml of zinc stearate mixed solution to grow the first layer according to the atomic layer epitaxial growth method, 1.2ml S and 0.4ml zinc stearate solution to grow the second layer, 1.5ml S and 0.5ml zinc stearate solution to grow the third layer, finally forming MnSe / ZnSe / ZnS doped core-shell structure nanocrystals, adding S each time The interval bet...

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Abstract

The present invention provides a doped semiconductor nano-crystalline and its preparing method. The doped semiconductor nano-crystalline is MnSe/ZnSe/ZnS, using Mn doping with ZnSe semiconductor nano-crystalline as a case, covering with core-shell structure nano-crystalline of ZnS layer. The covering range of the photoluminescence peak of the semiconductor nano-crystalline is 570-610nm, having better monodispersity, the quantum yield is more than 50%, the fluorescence stability is higher. The invention has a simply synthetic method, simply doped process, convenient control for doped quantity, avoiding the use of combustible and explosible medicine at the same time.

Description

(1) Technical field [0001] The invention relates to a doped semiconductor nanocrystal and a preparation method thereof. (2) Background technology [0002] Semiconductor nanocrystals are very small semiconductor light-emitting materials with good photoelectric properties, usually called quantum dots. Controlling the emission range of semiconductor nanocrystals by controlling their particle size is a promising research hotspot. Fluorescent semiconductor nanocrystals have the following advantages: 1. Narrow and stable fluorescence peak; 2. Relatively wide and strong absorption band; 3. Adjustable emission peak position and high photochemical stability, etc. The above characteristics make semiconductor nanocrystals Crystals have broad application prospects in biomarkers, light-emitting diodes, adjustable emission sources, lasers, and sensors. Doped semiconductor nanocrystals are doped with transition elements such as Mn, Cu, Eu, and rare earth elements in semiconductor nanopar...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/54C09K11/57
Inventor 李林松申怀彬
Owner 南京紫同纳米科技有限公司
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