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Tin oxide target material doped with silver as well as preparation method and application thereof

A tin oxide and target technology, which is used in transportation and packaging, metal processing equipment, metal material coating technology, etc., can solve the problems of high surface resistance and reduced electrode ceramic conductivity, target purity

Active Publication Date: 2019-09-20
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent CN201710535442.X uses pulsed laser deposition technology to prepare an antimony-doped tin oxide transparent conductive film. The obtained ATO film has uniform distribution of Sb elements, high crystallinity, good structural uniformity, and good light-transmitting and conductive properties. and anti-sintering properties, but additives reduce SnO 2 The electrical conductivity of the base electrode ceramics and the purity of the target material; Chinese patent CN102839348A uses radio frequency magnetron sputtering technology to prepare fluorine-doped tin oxide thin films, and the prepared FTO thin films also achieve better light transmission and electrical conductivity. The FTC value is high, but there is a problem of high surface resistance

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  • Tin oxide target material doped with silver as well as preparation method and application thereof

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preparation example Construction

[0028] The present invention also provides a method for preparing a silver-doped tin oxide target described in the above technical solution, comprising the following steps:

[0029] Ag powder and SnO 2 The powders are mixed to obtain a mixed powder;

[0030] Mixing the mixed powder, water and triethanolamine to obtain the first mixed slurry;

[0031] mixing the first mixed slurry with polyvinyl alcohol to obtain a second mixed slurry;

[0032] Spray drying the second mixed slurry to obtain dry powder;

[0033] performing cold isostatic pressing on the dry powder in a target mold to obtain an embryo body;

[0034] The green body is kept warm and sintered in sequence to obtain the silver-doped tin oxide target.

[0035] The present invention combines Ag powder and SnO 2 The powders are mixed to obtain a mixed powder. In the present invention, there is no special limitation on the specific mixing method, and a mixing method well known to those skilled in the art can be used...

Embodiment 1

[0054] Step 1: Measure 50g of Ag powder (particle size: 20nm) with a purity of 99.99% and SnO with a purity of 99.99% 2 powder (particle size is 10nm), and Ag powder and SnO 2 The mass ratio of the powder is 1:50 for mixing to form a mixed powder;

[0055] Step 2: Add 400 mL of deionized water to the mixed powder, and use 0.3wt% (based on the mass of the mixed powder) triethanolamine as an organic additive, and ball mill for 15 hours to form the first mixed slurry;

[0056] Step 3: Add 1wt% (based on the mass of mixed powder) polyvinyl alcohol as an organic binder to the first mixed slurry, and grind for 2 hours to form a second mixed slurry;

[0057] Step 4: Spray drying and granulating the second mixed slurry, so that the particle size of the powder after drying is 40 μm;

[0058] Step 5: Filling the dried powder into the target mold, and subjecting it to cold isostatic pressing (CIP) at 200 MPa for 3 minutes to obtain an embryo body with a relative density greater than 50...

Embodiment 2

[0064] Step 1: Measure 50g of Ag powder (particle size: 30nm) with a purity of 99.99% and SnO with a purity of 99.99% 2 powder (particle size is 15nm), and with Ag powder and SnO 2 The mass ratio of the powder is 1:100 for mixing to form a mixed powder;

[0065] Step 2: Add 600 mL of deionized water to the mixed powder, and use 0.6 wt % (based on the mass of the mixed powder) of triethanolamine as an organic additive, and ball mill for 24 hours to form the first mixed slurry;

[0066] Step 3: Add 2wt% (based on the mass of mixed powder) polyvinyl alcohol as an organic binder to the first mixed slurry, and grind for 3 hours to form a second mixed slurry;

[0067] Step 4: Spray drying and granulating the second mixed slurry, so that the particle size of the powder after drying is 100 μm;

[0068] Step 5: Filling the dried powder into the target mold, and subjecting it to cold isostatic pressing (CIP) at 300 MPa for 4 minutes to obtain an embryo body with a relative density gre...

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Abstract

The invention provides a tin oxide target material doped with silver as well as a preparation method and application thereof and belongs to the technical field of preparation of target material. The tin oxide target material is prepared from Ag powder and SnO2 powder, wherein the mass ratio of Ag powder to SnO2 powder is (1:50)-(1:100). Ag is doped in the tin oxide target material to improve the sintering performance of SnO2 based target material and increase the density of the target material, and the density of the target material affects the sputtering rate, and the electrical and optical property of a film. The higher the density of the target material is, the higher the performance of the film is, and the film can better bear the thermal stress during the sputtering process. In addition, the resistance to oxidation of the target material can be improved to prolong the service life of the film.

Description

technical field [0001] The invention relates to the technical field of target material preparation, in particular to a silver-doped tin oxide target material and its preparation method and application. Background technique [0002] In recent years, due to the rapid development of the semiconductor integrated circuit manufacturing industry, sputtering targets, a high value-added electronic material, have a broad market. Transparent conductive oxide materials have a wide range of applications in the fields of optoelectronics and display devices due to their high electrical conductivity and a transmittance of more than 80% in the visible light region, such as ITO. ITO is the most widely used transparent conductive material, but due to the high price and instability of the raw material indium, the research on exploring its alternative materials has not stopped. The dense tin oxide ceramic material is a wide bandgap semiconductor material with a direct bandgap. Previous research...

Claims

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Application Information

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IPC IPC(8): C23C14/34B22F3/04B22F3/10B22F1/00C22C29/12
CPCB22F1/0007C23C14/3414B22F3/04B22F3/10C22C29/12B22F1/10
Inventor 张科陈钦忠叶开满虞志轩
Owner FUJIAN ACETRON NEW MATERIALS CO LTD
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