Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material

A low-temperature sintering technology for ferroelectric ceramics, which is applied in the field of ternary system relaxor ferroelectric ceramic materials, can solve the problems of material component deviation, high sintering temperature, and electrical performance degradation, and achieve high-field piezoelectric performance improvement, Effects of high electrical performance and enhanced temperature stability

Active Publication Date: 2015-11-25
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the problems of high sintering temperature of existing PIN-PMN-PT ceramics, serious lead pollution caused by lead volatilization, deviation of material components, decline of electrical properties, and high production cost, and provides a low-temperature sintered ternary system Relaxor Ferroelectric Ceramic Material, Preparation Method and Application

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  • Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
  • Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material
  • Low-temperature sintered ternary system relaxor ferroelectric ceramic material, preparation method and application of low-temperature sintered ternary system relaxor ferroelectric ceramic material

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specific Embodiment approach 1

[0019] Specific embodiment 1: The chemical formula of a low-temperature sintered ternary relaxor ferroelectric ceramic material in this embodiment is xPb(In 1 / 2 Nb 1 / 2 )O 3 -(1-x-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -yPbTiO 3 -awt.%CuO, where 0.16≤x≤0.36, 0.32≤y≤0.36, 0

specific Embodiment approach 2

[0020] Specific implementation manner 2: The preparation method of a low-temperature sintered ternary system relaxor ferroelectric ceramic material of this embodiment is completed in the following steps:

[0021] 1. Using solid-phase reaction method to synthesize pure phase MgNb 2 O 6 Precursor powder

[0022] 2. Using solid phase reaction method to synthesize pure phase InNbO 4 Precursor powder

[0023] 3. Using PbO, TiO 2 , The pure phase of MgNb obtained in step one 2 O 6 Precursor powder and pure phase InNbO obtained in step 2 4 The precursor powder is used as the raw material, and the pure phase xPb(In 1 / 2 Nb 1 / 2 )O 3 -(1-x-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -yPbTiO 3 Matrix powder, where 0.16≤x≤0.36, 0.32≤y≤0.36;

[0024] 4. The pure phase xPb(In 1 / 2 Nb 1 / 2 )O 3 -(1-x-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -yPbTiO 3 The matrix powder is used as the raw material, and the low-temperature sintered ternary system relaxor ferroelectric ceramic material is prepared by solid-phase synthesis preparation technolog...

specific Embodiment approach 3

[0025] Specific embodiment three: This embodiment is different from the specific embodiment two in that: in step one, a solid phase reaction method is used to synthesize pure phase MgNb 2 O 6 The precursor powder is specifically carried out according to the following steps:

[0026] According to the chemical formula as MgNb 2 O 6 Weigh MgO and Nb 2 O 5 , Will weigh the MgO and Nb 2 O 5 Mix and place in a polyethylene ball milling tank, with absolute ethanol as the ball milling medium, agate ball as the milling ball, ball mill for 24h~72h to obtain wet material A after ball milling, and place the wet material A after ball milling at a temperature of 50℃ Dry in an oven at ~100℃ to obtain dry block A. Place the dry block A in an agate mortar to grind and crush to obtain powder A. Then, place the powder A in an alumina crucible with a lid. Pre-sintering at 1000℃~1150℃ for 2h~6h to obtain pure phase MgNb 2 O 6 Precursor powder. Others are the same as the second embodiment.

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Abstract

The invention relates to a low-temperature sintered ternary system relaxor ferroelectric ceramic material, a preparation method and application of the low-temperature sintered ternary system relaxor ferroelectric ceramic material. The problems that existing PIN-PMN-PT ceramic sintering temperature is high, environmental pollution is caused by severe lead volatilization, the material performance is reduced, and the production cost is high are solved. The chemical general formula of the ceramic material is xPb(In1 / 2Nb1 / 2)O3-(1-x-y)Pb(Mg1 / 3Nb2 / 3)O3-yPbTiO3-awt.%CuO. The method includes the steps of firstly, conducting a solid-phase reaction to synthesize a precursor of MgNb2O6; secondly, conducting a solid-phase reaction to synthesize a precursor of InNbO4; thirdly, conducting a solid-phase reaction to synthesize matrix powder of PIN-PMN-PT; fourthly, preparing low-temperature sintered ternary system relaxor ferroelectric ceramic through the combination of the solid-phase synthesis technology and the curtain coating lamination process. The low-temperature sintered ternary system relaxor ferroelectric ceramic material, the preparation method and the application are used for preparing high-power piezoelectric buzzers and multi-layer piezoelectric devices.

Description

Technical field [0001] The invention relates to a ternary system relaxation ferroelectric ceramic material, a preparation method and application thereof. Background technique [0002] Ternary relaxor ferroelectric material Pb(In 1 / 2 Nb 1 / 2 )O 3 -Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 (Referred to as PIN-PMN-PT) because it has a ratio of binary system Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 The high phase transition temperature and large coercive field of materials have attracted widespread attention in the materials research community in recent years. This system has a good application prospect in the development of a new generation of wide temperature range, high power piezoelectric ferroelectric devices. At present, most of the research work focuses on the preparation and characterization of PIN-PMN-PT single crystal. Single crystal materials have excellent electrical properties, but their complex preparation process, obvious component segregation, high price and poor mechanical properties mak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/499C04B35/622
Inventor 常云飞吴杰孙媛杨彬曹文武
Owner HARBIN INST OF TECH
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