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Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate

A three-layer structure, ferroelectric material technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as unfavorable upper-layer film crystallization

Inactive Publication Date: 2009-03-18
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as a substrate, the amorphous structure of quartz glass is not conducive to the crystallization of the upper film
So far, there have been no reports on the growth of bismuth ferrite-lead titanate multiferroic thin film materials with complete crystallization and excellent performance on quartz glass substrates.

Method used

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  • Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate
  • Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate
  • Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate

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Embodiment 1

[0030] I. First, pre-treat the quartz glass substrate: use acetone and alcohol to ultrasonically clean it, then rinse it with deionized water, and finally bake it at 65°C for 3 hours to remove water vapor.

[0031] II. Preparation of 0.4mol / L 6BiFeO 3 -4PbTiO 3 Sol 30ml:

[0032] ① Weigh 2.0016 grams of n-tetrabutyl titanate with an analytical balance, add 5 ml of ethylene glycol methyl ether, and stir in an oil bath at 80-90 ° C for 2 to 3 hours to form a n-tetrabutyl titanate solution; weigh 2.2957 grams of lead acetate, add 13 ml of ethylene glycol The alcohol methyl ether was stirred and dissolved at room temperature, and then mixed with n-butyl titanate solution at room temperature and stirred for 30 minutes to form a lead titanate solution.

[0033] ② Weigh 4.7073 grams of bismuth nitrate pentahydrate and 3.5644 grams of iron nitrate nonahydrate, dissolve them in 6ml of ethylene glycol methyl ether respectively, and then mix and stir for 30 minutes at room temperature....

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Abstract

The invention relates to a process for preparing piezoelectric material with three-layer structure of quartz / lanthanum nickelate / bismuth ferric-lead titanate, belonging to the technical field of inorganic piezoelectric material preparation process. The invention coats a bismuth ferric-lead titanate film on a quartz glass substrate through the sol-gel process, and introduces a lanthanum nickelate layer between the quartz glass substrate and the bismuth ferric-lead titanate film as a bottom electrode, thereby realizing the double gains and characterization of the optical and electrical performances of the bismuth ferric-lead titanate film on the quartz glass substrate. Piezoelectric material with SiO2 / LaNiO3 / BiFeO3-PbTiO3 three-layer structure which is prepared by the invention has excellent optical and electric performances, and can be used as memory storage materials and sensitized component materials.

Description

technical field [0001] The invention relates to a preparation method of a quartz / lanthanum nickelate / bismuth ferrite-lead titanate three-layer structure ferroelectric material, which belongs to the technical field of inorganic ferroelectric material preparation technology. Background technique [0002] Multiferroic materials are materials that combine ferroelectricity, ferromagnetism, and ferroelasticity. This type of material has (anti-)ferroelectricity and (anti-)ferromagnetism at the same time, so it has great significance in the field of memory storage materials and sensitive device materials. It has broad development prospects and can be used in aerospace, automobile industry, biology, medicine, information and other technical fields, which has attracted widespread attention in the world. With the development of modern science and technology industry, the miniaturization, light weight and integration of devices are required, so the preparation and application of thin fi...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 俞圣雯周晓雯程晋荣
Owner SHANGHAI UNIV
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