Field effect transistor based on negative capacitance and preparation method thereof, and biosensor and preparation method thereof
A field-effect transistor and negative capacitance technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of high subthreshold swing, low sensitivity and response speed, high device power, etc., and achieve excellent ferroelectric performance , Improve the sensing sensitivity and response speed, and the effect of simple process
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Embodiment 1
[0076] Such as Figure 1-9 As shown, the present invention provides a kind of preparation method based on the field effect transistor of negative capacitance, comprises the steps:
[0077] 1) providing a semiconductor substrate, said semiconductor substrate comprising bottom silicon, buried oxide layer and top silicon;
[0078] 2) using a photolithography process to define a channel pattern and a source region pattern and a drain region pattern connected to both ends of the channel pattern;
[0079] 3) Transferring the channel pattern, source region pattern and drain region pattern to the top layer of silicon, and performing ion implantation to the positions corresponding to the source region pattern and the drain region pattern to form a channel region and a source region and a drain region respectively connected to two ends of the channel region;
[0080] 4) forming a dielectric layer on the surface of the channel region;
[0081] 5) forming a conductive layer on the surf...
Embodiment 2
[0126] Such as Figure 10 As shown, the present invention also provides a method for preparing a biosensor, comprising the steps of:
[0127] 1) adopt the preparation method as described in any one scheme in embodiment one to prepare the field-effect transistor based on negative capacitance;
[0128] 2) using a reagent to modify the surface of the channel region of the field effect transistor to form an active film terminated with an active group; and
[0129]3) forming a capture probe on the surface of the active film, wherein the capture probe is combined with an active group on the active film through a chemical bond, so that the capture probe is modified in the silicon nanowire groove the surface of the road.
[0130] As an example, the active group includes one or a combination of two or more of amino group, carboxyl group, hydroxyl group and aldehyde group, which is set according to actual needs.
[0131] Specifically, the present invention also provides a biosensor b...
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