225 results about "Iodine atom" patented technology

To provide a resist composition which achieves higher sensitivity and can form a resist pattern with reduced LWR.SOLUTION: The resist composition contains: a resin component (A1) whose solubility in a developer changes by the action of an acid; and a compound (D0) represented by the following general formula (d0-1). (In the formula, Cy1 represents a cyclic group containing an aliphatic ring; Cy2 represents a benzene ring or a naphthalene ring; Xd01 represents an iodine atom or a bromine atom; Rd01 and Rd02 represent substituents; Ld01 represents a divalent linking group; Ld02 represents a divalent linking group or a single bond; m01 represents an integer of 1 or more; n01 and n02 represent integers of 0 or more; Mmd+ represents an organic cation; and md represents an integer of 1 or more.)SELECTED DRAWING: None

The present invention uses a resist composition that contains a base material component that has a structural unit derived from a compound represented by general formula (a0-1). In formula (a0-1), W01 represents a polymerizable group–containing group, La01 represents a divalent linking group or a single bond, and I represents an iodine atom. Ra02 represents a substituent other than an iodine atom. Ya01 represents a divalent linking group or a single bond. Va01 represents a single bond, an alkylene group, or a fluorinated alkylene group. Ra01 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Mm+ is an m-valent cation.

Disclosed are a salt represented by formula (I), an acid generator and a resist composition:wherein Q1 and Q2 each represent a fluorine atom or a perfluoroalkyl group; R11 and R12 each represent a hydrogen atom, a fluorine atom or a perfluoroalkyl group; z represents an integer of 0 to 6; X1 and X2 each represent *—CO—O—, *—O—CO—, etc.; L1 represents a single bond or a hydrocarbon group which may have a substituent; A1 represents a group having a lactone structure which may have a substituent; L2 and L3 each represent a single bond or an alkanediyl group; R1 represents an iodine atom or a haloalkyl group; R2 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group; m2 represents an integer of 0 to 4; and Z+ represents an organic cation.

The present invention provides: an actinic-ray-sensitive or radiation-sensitive resin composition containing (A) a resin, and (Q1) an actinic-ray-sensitive or radiation-sensitive acid generator, which is an onium salt compound having a structure in which three or more iodine atoms and at least one group selected from −SO3 – and −SO2− are bonded to the same aromatic ring; an actinic-ray-sensitive or radiation-sensitive resin film formed from the actinic-ray-sensitive or radiation-sensitive resin composition; and a method for forming a pattern and a method for manufacturing an electronic device using the actinic-ray-sensitive or radiation-sensitive resin composition.

This resist composition contains: a resin component (A1), the solubility of which in a developer solution changes due to the action of an acid; and a compound (D0) represented by general formula (d0-1). In the formula, Ar is an aromatic ring; OH is a hydroxy group; Xd01 is an iodine atom, a fluorine atom, a bromine atom, or a fluorinated alkyl group; Ld is a single bond or a divalent linking group; Z+ is S+ or I+; and Xd02 is an iodine atom, a fluorine atom, a bromine atom, or a fluorinated alkyl group. [Chemical formula 1]

The invention relates to the technical field of biological medicines, and particularly discloses a BODIPY (boron dipyrromethene)-based compound and an application of the BODIPY-based compound in photodynamic oxidation of beta-amyloid protein (Abeta). The compound takes iodo-BODIPY as a photosensitive core and is connected with 4-t-butyloxycarboryl benzene as an A beta recognition group. The introduction of iodine atoms significantly enhances the intersystem crossing ability of molecules, so that the molecules have excellent reactive oxygen species (ROS) generation ability. The compound has high ROS yield, good optical stability and biocompatibility, can specifically target A beta aggregate, realizes photodynamic oxidative degradation, and provides a novel potential tool for treatment of Alzheimer's disease.

Disclosed is a resist composition that contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0-1). (In the formula, Cy1 represents a cyclic group including an aliphatic ring; Cy2 represents a benzene ring or a naphthalene ring; Xd01 represents an iodine atom or a bromine atom; Rd01 and Rd02 each represent a substituent; Ld01 represents a divalent linking group; Ld02 represents a divalent linking group or a single bond; m01 represents an integer of 1 or more; n01 and n02 each represent an integer of 0 or more; Mmd+ represents an organic cation; and md represents an integer of 1 or more.)

There is provided a method for storing fluoroalkene in which, even when stabilizers for suppressing reactions of fluoroalkene are not added, the reactions of the fluoroalkene hardly occur and the purity of the fluoroalkene hardly decreases during storage. Fluoroalkene having a bromine atom or an iodine atom in the molecule is at least one type of fluoroethylene represented by a first general formula C2HpFqXr and fluoropropene represented by a second general formula C3HsFtXu (X represents a bromine atom or an iodine atom), and contains or does not contain at least one type among manganese, cobalt, nickel, and silicon as metal impurities. When any of the foregoing is contained, the fluoroalkene is stored in a container with the total concentration of the manganese, the cobalt, the nickel, and the silicon set to 1000 ppb by mass or less.

To provide a resist composition which achieves higher sensitivity and can form a resist pattern having reduced LWR, a resist pattern forming method using the resist composition, a polymer compound used for the resist composition, and a compound usable for producing the polymer compound.SOLUTION: The resist composition contains a resin component (A1) whose solubility in a developer changes by the action of an acid. The resin component (A1) contains a constituent unit (a0) derived from a compound represented by the following general formula (a0-1) (where I represents an iodine atom; L0 represents a single bond or a divalent linking group; and Rpg represents an acid-dissociable group).SELECTED DRAWING: None

This resist composition contains a compound including cations (C0) represented by general formula (c0). In the formula, Rb01 to Rb03 each independently represent an aryl group that may have a substituent, an alkyl group that may have a substituent, or an alkenyl group that may have a substituent. Rb01 to Rb03 may be bonded to each other to form a ring together with the sulfur atom in the formula. However, one or more of Rb01 to Rb03 has at least one iodine atom, and one or more of Rb01 to Rb03 includes at least one lactone ring structure, -SO2-containing ring structure, or carbonate-containing cyclic structure.

The present invention provides a composition capable of forming a pattern having excellent resolution. The present invention further provides a resist film, a pattern forming method, and an electronic device manufacturing method related to said composition. The composition according to the present invention comprises a compound A that has a plurality of iodine atoms bonded to a carbon atom, and a compound B that does not have an iodine atom bonded to a carbon atom and has a plurality of specific functional groups selected from the group consisting of: nitrogen-containing aromatic heterocyclic groups; -NH2; NH2 groups protected by a releasable protective group; -NHRN1; -NHRN1 groups protected by a releasable protective group; -NRN2 2; -C≡N; -OH; -ORO; -SH; -SRS; -PRP1 2; and -P(ORP2)2. The composition satisfies at least one of requirement 1 and requirement 2.

To provide a resist composition with superior lithographic performance such as sensitivity and LWR, and also provide a sulfonium salt applicable as an acid generator in the resist composition, and an acid generator comprising the sulfonium salt.SOLUTION: The present invention provides a sulfonium salt represented by the general formula (1) where R1 is a hydrogen atom, a hydroxyl group, a carboxyl group, an electron-withdrawing group, an amino group, an optionally substituted C1-30 linear, branched-chain or cyclic alkyl group, a C2-30 linear, branched-chain or cyclic alkenyl group or the like; Ar is a C6-14 aryl group or a C3-20 heteroaryl group; the sulfonium salt in the formula has at least one iodine atom in the sulfonium cation structure; and X- is a monovalent anion.SELECTED DRAWING: None

PROBLEM: To provide a silicone macromer having a high proportion of a (meth)acrylic group at both terminals, and having a quaternary ammonium cation site in a molecular chain. SOLUTION: The present invention provides a double-terminal (meth)acrylic-modified silicone macromer represented by general formula (1) and having a tertiary amino group in a molecular chain. The present invention further provides a double-terminal (meth)acrylic-modified silicone macromer represented by general formula (4) and having a quaternary ammonium cation site in a molecular chain. (In general formulas (1) and (4): each R is independently a group selected from a C1-10 alkyl group, a C6-10 aryl group, and a C7-10 aralkyl group; each R1 is independently a group selected from a C1-10 alkyl group, a C6-10 aryl group, and a C7-10 aralkyl group; each R2 is independently a C1-10 alkyl group, a 2-hydroxyethyl group, a C6-10 aryl group, and a C7-10 aralkyl group; each X is independently a hydrogen atom or a methyl group; Q is a divalent organic group; each a is independently an integer of 1-400, b is an integer of 1-50, and each n1 is independently an integer of 2-10; and Y is a chlorine atom, a bromine atom or an iodine atom.)

To provide a resist composition or the like that is superior in all of sensitivity, roughness, and resolution.SOLUTION: The present invention provides a resist composition that generates an acid upon exposure and that changes solubility in a developer solution due to the action of the acid, the resist composition comprising a compound containing a cation (C0) represented by general formula (c0). [In the formula, Y0 represents a polar group containing an oxygen atom. Rf0 represents a fluorine atom or a fluorinated alkyl group. R01 represents a substituent (excluding a polar group containing an oxygen atom, a fluorine atom, and a fluorinated alkyl group), and R02 and R03 each independently represent a substituent (excluding an iodine atom)].SELECTED DRAWING: None

The present invention provides: a composition for forming a lithography underlayer film, the composition containing a polymer that contains a repeating unit derived from an iodine-containing monomer represented by general formula (1); and a positive resist composition which contains a polymer that contains a repeating unit derived from an iodine-containing monomer represented by formula (1). (In the formula, X1 is a hydrogen atom, a methyl group, or a halogen atom, Y1 is -O- or -NH-, a is 0 or 1, and R is a group containing an iodine atom and 2 to 30 carbon atoms.)

A low-temperature etching method including an etching step of setting the temperature of a member to be etched having an etching object containing silicon to 0° C. or less, bringing an etching gas containing an etching compound into contact with the member to be etched, and etching the etching object. The etching gas contains or does not contain high-boiling-point impurities, the high-boiling-point impurities being compounds having at least one type of atom among a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a hydrogen atom, and an oxygen atom in the molecule and having a boiling point of 20° C. or more under a pressure of 101 kPa, and, when the etching gas contains the high-boiling-point impurities, the total concentration of all types of the contained high-boiling-point impurities is 500 ppm by volume or less.

To provide a resist material which has high sensitivity and improved LWR and CDU regardless of whether it is positive or negative, and a pattern forming method using the same.SOLUTION: The resist material contains a bis-onium salt containing: a divalent anion which has a sulfonic acid anion structure directly bonded to an aromatic group substituted with an iodine atom, and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group directly or via a linking group containing one or more atoms; and an onium cation.SELECTED DRAWING: None

A compound represented by the following formula (1):wherein RG is a group containing at least one cyclic structure,I is an iodine atom,R1 is a monovalent functional group having 0 to 30 carbon atoms, containing no polymerizable unsaturated bond, and being optionally the same or different;n is an integer of 1 to 5, andm is an integer of 1 to 5.

A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms

To provide a resist material which has high sensitivity and improved LWR and CDU regardless of whether it is positive or negative, and a pattern forming method using the same.SOLUTION: The resist material contains a base polymer having a sulfonium salt or iodonium salt structure in which an arylsulfonic acid anion substituted with an iodine atom is bonded to the main chain.SELECTED DRAWING: None

To provide a resist material having high sensitivity and improved LWR and CDU, and a pattern forming method using the same.SOLUTION: The resist material contains a base polymer containing a repeating unit (a) comprising: a substituted or unsubstituted arylsulfonic acid anion bonded to a polymer main chain having a group containing an iodine atom or a bromine atom; and an onium cation.SELECTED DRAWING: None

The invention relates to an onium salt type monomer, a polymer, a chemically amplified resist composition and a pattern forming method. The present invention provides a photolithographic composition which has excellent solvent solubility, high sensitivity, high contrast, excellent photolithographic performance such as exposure margin, edge roughness, size uniformity, and depth of focus in optical lithography using high-energy rays, and which can be used in optical lithography using high-energy rays. The present invention relates to an onium salt-type monomer used in a chemically amplified resist composition which can resist pattern collapse even when a fine pattern is formed, a polymer containing a repeating unit derived from the onium salt-type monomer, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. An onium salt type monomer comprising a cation represented by formula (a1) and a sulfonic acid anion that contains a polymerizable group and does not contain an iodine atom. # imgabs0 #

This resist composition contains a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (in the formula, Ra01 represents a hydrogen atom, an alkyl group, or a halogenated alkyl group, L01 represents a single bond, *1-C(=O)-O-*2, or *1-C(=O)-NH-*2, Ar01 represents an aromatic group, L02 represents a single bond or a divalent linkage group, Ra02 represents a hydrogen atom or an alkyl group, I represents an iodine atom, m01 represents an integer of 1 or more, Mmd+ represents an m-valent onium cation, and m represents an integer of 1 or more).

To provide a resist composition good in all of sensitivity, CDU and resolution, a resist pattern forming method using the resist composition, and a compound used in the resist composition.SOLUTION: The resist composition contains a compound containing a cation (C0) represented by formula (c0) (where Z+ represents S+ or I+; Ar1, Ar2 and Ar3 represent aromatic rings; I represents an iodine atom; Rz11, Rz21 and Rz31 represent C1-5 alkyl groups; and lz1, lz2, lz3, mz1, mz2, mz3, nz1, nz2 and nz3 represent integers of 0 or more, provided that at least one of lz1, mz1 and nz1 represents an integer of 1 or more and at least one of lz2, mz2 and nz2 represents an integer of 1 or more).SELECTED DRAWING: None

To provide an onium salt for a resist composition having high sensitivity to particle beams or electromagnetic radiation, in particular, electron beams or extreme ultraviolet rays.SOLUTION: The onium salt is represented by general formula (1) or (2) in the figure. The onium salt has at least one fluorine atom or iodine atom bonded as a substituent in its structure.SELECTED DRAWING: None

The present invention provides: an active ray-sensitive or radiation-sensitive resin composition, containing (A) a resin and (Q1) an active ray-sensitive or radiation-sensitive acid generator which is an onium salt compound having a structure in which three or more iodine atoms and at least two or more atoms selected from oxygen atoms and sulfur atoms are bonded to the same aromatic ring; an active ray-sensitive or radiation-sensitive film formed from the active ray-sensitive or radiation-sensitive resin composition; a pattern forming method using the active ray-sensitive or radiation-sensitive resin composition; and a method for producing an electronic device.

There is provided a method for storing fluoroalkene in which, even when stabilizers for suppressing reactions of fluoroalkene are not added, the reactions of the fluoroalkene hardly occur and the purity of the fluoroalkene hardly decreases during storage. Fluoroalkene having a bromine atom or an iodine atom in the molecule is at least one type of fluoroethylene represented by a first general formula C2HpFqXr and fluoropropene represented by a second general formula C3HsFtXu (X represents a bromine atom or an iodine atom), and contains or does not contain at least one type among sodium, potassium, magnesium, and calcium as metal impurities. When any of the foregoing is contained, the fluoroalkene is stored in a container with the total concentration of the sodium, the potassium, the magnesium, and the calcium set to 1000 ppb by mass or less.

The invention provides a series of polybenzyl bromide or polybenzyl iodide-based monomolecular resin photoresists as well as a preparation method and application thereof. The monomolecular resin can be used as a main body material of the photoresists. The raw materials are cheap and easily available, and the synthesis process is simple. According to the compound disclosed by the invention, adamantane is taken as a core unit, a plurality of benzyl bromide or benzyl iodine groups, adamantane and a benzene ring are externally connected, and bromine atoms or iodine atoms are additionally introduced, so that the sensitivity and the etching resistance of the photoresist can be improved to the maximum extent.

A two-dimensional particle that includes: one or plural layers that comprise a layer body represented by: MmXn, wherein Mis at least one metal of Group 3, 4, 5, 6, or 7; X is a carbon atom, a nitrogen atom, or a combination thereof; n is 1 to 4; and m is more than n but not more than 5, a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from a hydroxyl group, a fluorine atom, a chlorine atom, an iodine atom, an oxygen atom, a chlorine atom, a phosphorus atom, and a hydrogen atom; and a hydrocarbon compound exists on the one or plural layers.

The present invention provides a crosslinkable fluororubber composition containing: a fluororubber containing bromine atoms and / or iodine atoms; a multifunctional crosslinking aid; an organic peroxide; and at least one metal compound selected from the group consisting of magnesium oxide and a solid solution of aluminum oxide and magnesium oxide, wherein the content of the metal compound is 0.05-0.50 parts by mass per 100 parts by mass of the fluororubber.