Transparent extended p-n heterojunction thin film and preparation method thereof

An epitaxial thin film and heterojunction technology, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. The effect of optical transmittance

Inactive Publication Date: 2010-04-21
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The epitaxial p-n heterojunction thin film device using LSSO for th

Method used

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  • Transparent extended p-n heterojunction thin film and preparation method thereof
  • Transparent extended p-n heterojunction thin film and preparation method thereof
  • Transparent extended p-n heterojunction thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0044] Example 1. Preparation of p-n heterojunction thin film with PZT / LSSO / STO structure

[0045] 1) The pulsed laser deposition method is used to deposit on the STO single crystal substrate under the conditions of laser energy of 190mJ, laser frequency of 5Hz, deposition temperature of 690°C, and oxygen pressure of 20pa to obtain LSSO epitaxy with a deposition thickness of 100nm film; the La x Sr 1-x SnO 3 In the epitaxial film, x=0.03.

[0046] Among them, the LSSO target material required for the preparation of LSSO epitaxial film is prepared according to the following method: strontium titanate SrCO 3 (purity ≥ 99%) powder, lanthanum oxide La 2 o 3 (purity ≥ 99.99%, lanthanum oxide is prone to deliquescence in the air, in order to ensure accurate quality, it should be dried in a high-temperature furnace above 500°C for 2 hours before use) powder and tin oxide SnO 2 (purity ≥ 99.8%) powder according to La 0.03 Sr 0.97 SnO 3 The chemical molar ratio is configured, ...

Embodiment 2

[0058] Example 2, Preparation of p-n heterojunction thin film with PZT / LSSO / STO structure

[0059] 1) The pulsed laser deposition method is used to deposit on the STO single crystal substrate under the conditions of laser energy of 170mJ, laser frequency of 8Hz, deposition temperature of 650°C, and oxygen pressure of 15pa to obtain LSSO epitaxy with a deposition thickness of 100nm film; the La x Sr 1-x SnO 3 In the epitaxial film, x=0.05.

[0060] Among them, the LSSO target material required for the preparation of LSSO epitaxial film is prepared according to the following method: strontium titanate SrCO 3 (purity ≥ 99%) powder, lanthanum oxide La 2 o 3 (purity ≥ 99.99%, lanthanum oxide is prone to deliquescence in the air, in order to ensure accurate quality, it should be dried in a high-temperature furnace above 500°C for 2 hours before use) powder and tin oxide SnO 2 (purity ≥ 99.8%) powder according to La 0.05 Sr 0.95 SnO 3 The chemical molar ratio is configured, ...

Embodiment 3

[0072] Example 3. Preparation of p-n heterojunction thin film with PZT / LSSO / STO structure

[0073] 1) The pulsed laser deposition method is used to deposit on the STO single crystal substrate under the conditions of laser energy of 210mJ, laser frequency of 10Hz, deposition temperature of 750°C, and oxygen pressure of 30pa to obtain LSSO epitaxy with a deposition thickness of 150nm. film; the La x Sr 1-x SnO 3 In the epitaxial film, x=0.07.

[0074] Among them, the LSSO target material required for the preparation of LSSO epitaxial film is prepared according to the following method: strontium titanate SrCO 3 (purity ≥ 99%) powder, lanthanum oxide La 2 o 3 (purity ≥ 99.99%, lanthanum oxide is prone to deliquescence in the air, in order to ensure accurate quality, it should be dried in a high-temperature furnace above 500°C for 2 hours before use) powder and tin oxide SnO 2 (purity ≥ 99.8%) powder according to La 0.07 Sr 0.93 SnO 3The chemical molar ratio is configured,...

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Abstract

The invention discloses a transparent extended p-n heterojunction thin film and a preparation method thereof. The thin film comprises a SrTiO3, a LaxSr1-xSnO3 extended thin film, and any one of the following two extended thin films: a PbZr0.52Ti0.48O3 extended thin film and a BiFeO3 extended thin film, wherein the SrTiO3 is used as a mono-crystal substrate, the LaxSr1-xSnO3 extended thin film is arranged above the mono-crystal substrate and x is not less than 0.03 but is not more than 0.07, and the PbZr0.52Ti0.48O3 extended thin film and the BiFeO3 extended thin film is arranged above the LaxSr1-xSnO3 extended thin film. In the p-n heterojunction thin film provided by the invention, every layer thin film has better mono-crystal extensionality and is of a perovskite structure, the p-n heterojunction thin film not only has better rectification characteristic, but also has high penetration rate within the optical wavelength range of 400-2500 nm (p layer is PZT) and 500-2500 nm (p layer is BFO) of the whole device; the P layer materials (PZT, BFO) are ferroelectric material at the same time, wherein the BFP has both ferroelectricity and antiferromagnetism and has larger potential in the application of semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of single crystal thin film electronic devices, in particular to a transparent epitaxial p-n heterojunction thin film and a preparation method thereof. Background technique [0002] According to "Semiconductor Devices: Physics and Technology" 2nd edition (Semiconductor Devices: Physics and Technology, 2nd ed.) (S.M.Size, Wiley, New, York, 2002), the preparation and research of semiconductor devices has a history of 125 years Since 1998, the electronics industry based on semiconductor devices has developed into the largest industry in the world. About 60 main prototype devices and more than 100 derivative devices have been designed and manufactured. Among these devices, p-n junction and heterojunction are the two most basic units and components. [0003] According to reports in the British "Nature" magazine (Nature 389, 907-908, 1997) and the American "Science" magazine (Science 300, 1245-1246, 2003), transp...

Claims

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Application Information

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IPC IPC(8): H01L29/15H01L21/363
Inventor 焦兴利王海峰刘亲壮吴文彬
Owner UNIV OF SCI & TECH OF CHINA
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