46results about How to "Ferroelectric" patented technology

The invention discloses a preparation method of a single-phase multiferroic thin film. The preparation method comprises the steps that after a substrate is cleaned, a target material and the substrateare put into a coating cavity, and the pressure intensity in the cavity is adjusted; the temperature of the substrate is increased, then the cavity is filled with O2, and the pressure intensity in the cavity is adjusted; the distance between the substrate and the target material is adjusted, and the substrate and the target material are adjusted to rotate; the repetition frequency and pulse energy of a laser are adjusted; thin film deposition is conducted, and then heat preservation is conducted; and after heat preservation, cooling is conducted to the room temperature. The chemical composition of the target material is (1-m)BiTi(1-n) / 2FenMg(1-n) / 2O3-mCaTiO3, wherein 0<m<1, and 0<n<1. The preparation method provided by the invention has unique advantages when a thin film containing complex oxide is prepared, and the growth of the thin film can be precisely controlled in the preparation process. The invention further provides the single-phase multiferroic thin film and the applicationof the single-phase multiferroic thin film in an electronic device. The prepared thin film is compact and uniform, has ferroelectricity, ferromagnetism and magnetoelectric mutual controllability at the same time under room temperature, can be used in the electronic device containing a thin film, and has wide application prospects.

The invention discloses a preparation method for substituting fluorine for oxygen in bismuth ferrite crystal lattices. The method comprises the following steps of: 1, selecting a utensil made of anticorrosive material as a container, selecting diluted acid as a solvent, weighing nitride of Bi and nitride of Fe in a stoichiometric ratio, adding the nitrides into the solvent in a molar ratio of 1:1, preparing a proper amount of fluorine-containing salt, and adding citric acid into the solution; 2, performing initial reaction on the prepared solution in a water bath for (2.5+ / -0.5) hours with uniform stirring, and drying the reaction product in an oven to obtain powder; and 3, performing decomposition reaction on the obtained powder at the high temperature of 780+ / -15 DEG C for 30+ / -3 minutes, removing impurities, sheeting the decomposed powder, sintering the powder at the high temperature of 810+ / -15 DEG C for 10+ / -2 minutes, and thus obtaining a sample in which F-1 effectively enters BFO crystal lattices. The sample in which the fluorine effectively enters the bismuth ferrite crystal lattices and substitutes the oxygen has ferro-electricity and ferromagnetism, and the other path isprovided for realizing the development of multifunctional electronic devices.

The invention discloses a diisopropylpropylamine tetrafluoroborate crystal material, a preparation method and an application thereof, and belongs to the field of organic-inorganic hybrid materials. The crystalline material crystallizes at room temperature in P na2 1 The ferroelectric space group has two reversible phase transitions around 323.5K and 404K, and the heat absorption measured by differential calorimetry scanning is 40.375J / g and 11.014J / g, respectively. In addition, the preparation process of the crystal structure is simple, has good thermal stability and hydrophilic and lipophilic properties, can be mass-produced, and can be used as a low-cost, structurally defined amphiphilic room temperature ferroelectric material.

The invention discloses a two-dimensional semiconductor material negative capacitance field effect transistor and a preparation method thereof; a two-dimensional alloy semiconductor material HfZrSe2 is adopted as a channel material, and the surface of the channel material is oxidized in air to generate HfZrO2, and then annealing is carried out to obtain an HfZrO2 dielectric layer with a ferroelectric property; a high-k gate dielectric layer is deposited on the dielectric layer, and a gate dielectric with a mixed structure is formed. By means of the device structure, high gate dielectric and channel two-dimensional semiconductor material interfaces can be obtained, the deterioration of the interface state on the sub-threshold characteristic is reduced, and the super-steep sub-threshold slope is easily obtained; meanwhile, the high-k gate dielectric on the upper layer can protect the HfZrO2 dielectric of the ferroelectric characteristics below, so that the dielectric is isolated from theair, and the stability of the device is greatly improved. The device is simple in preparation process and large-scale production can be realized.