Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method

A technology of ferroelectric memory and ferroelectric thin film, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor crystallization properties of ferroelectric thin films, affecting material properties, poor leakage current characteristics, etc., and achieve residual Large polarization, good compatibility, and good fatigue properties

Inactive Publication Date: 2007-05-23
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PZT ferroelectric capacitors with metal Pt / ferroelectric film / metal Pt (MFM) structure as the main storage medium of FeRAM have a large fatigue rate and poor leakage current characteristics, and ferroelectric films directly prepared on metal Pt The crystallization performance is poor, which affects the performance of the material
If the oxide electrode is directly used, it is not only difficult to prepare, but the ferroelectric thin film prepared on it generally has a large leakage current.

Method used

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  • Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method
  • Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method
  • Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method

Examples

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Effect test

Embodiment 1

[0031] Embodiment 1 A method for preparing a ferroelectric film capacitor for a ferroelectric memory, comprising

[0032] ① Surface treatment and cleaning of the silicon substrate 1 according to the standard CMOS process;

[0033] ②A thermal oxidation method is used to form a silicon dioxide barrier layer 2 with a thickness of 150 nm on the surface of the silicon substrate 1;

[0034] ③ Prepare a 20nm-thick titanium dioxide bonding layer 3 on the silicon dioxide barrier layer 2 by magnetron sputtering. The shooting atmosphere is O 2 :Ar=1:9;

[0035] ④ Prepare a 150nm-thick lower electrode metal layer Pt4 on the titanium dioxide bonding layer 3 by magnetron sputtering. Ar gas;

[0036] ⑤ The LSMO target is prepared by the standard solid-state reaction method, and the LSMO ultra-large magnetoresistance material can be the nominal chemical formula (La 2 / 3 Sr 1 / 3 )MnO 3 , select the following preparation process: according to the stoichiometric ratio of 1 / 3:1 / 3:1, weigh hi...

Embodiment 2

[0047] Embodiment 2 A method for preparing a ferroelectric film capacitor for a ferroelectric memory, comprising

[0048] ① Surface treatment and cleaning of the silicon substrate 1 according to the standard CMOS process;

[0049] ②A thermal oxidation method is used to form a silicon dioxide barrier layer 2 with a thickness of 120 nm on the surface of the silicon substrate 1;

[0050] ③A 30nm-thick titanium dioxide bonding layer 3 was prepared on the silicon dioxide barrier layer 2 by magnetron sputtering. The shooting atmosphere is O 2 :Ar=2:9;

[0051] ④ Prepare a 150nm-thick lower electrode metal layer Pt4 on the titanium dioxide bonding layer 3 by magnetron sputtering. The atmosphere is Ar gas;

[0052] ⑤ The LSMO target was prepared by the standard solid-state reaction method, and the specific preparation process was the same as in Example 1 ⑤;

[0053] ⑥ Prepare a 10nm thick lower buffer layer 5 on the lower electrode metal layer Pt4 by magnetron sputtering. The pro...

Embodiment 3

[0059] Embodiment 3 A method for preparing a ferroelectric film capacitor for a ferroelectric memory, comprising

[0060] ① Surface treatment and cleaning of the silicon substrate 1 according to the standard CMOS process;

[0061] ②Using a thermal oxidation method to form a 200nm thick silicon dioxide barrier layer 2 on the surface of the silicon substrate 1;

[0062] ③ Prepare a 20nm-thick titanium dioxide bonding layer 3 on the silicon dioxide barrier layer 2 by magnetron sputtering. The atmosphere is O 2 :Ar=1:9;

[0063] ④ Prepare a 100nm-thick lower electrode metal layer Pt4 on the titanium dioxide bonding layer 3 by magnetron sputtering. Ar gas;

[0064] ⑤ The LSMO target was prepared by the standard solid-state reaction method, and the specific preparation process was the same as in Example 1 ⑤;

[0065] ⑥A lower buffer layer 5 with a thickness of 20nm is prepared on the lower electrode metal layer Pt4 by magnetron sputtering. The process conditions of magnetron sp...

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Abstract

The invention relates to a ferro-electricity film capacitor of ferro-electricity and relative preparation, wherein said film capacitor is formed by silicon substrate, silica dioxide baffle layer, titania adhesive layer, low electrode metal layer, low buffer layer, ferro-electricity film layer, up buffer layer, and up electrode metal layer; the adhesive layer is 10-30nm thick; the low electrode metal layer is 100nm-300nm; the low buffer layer is 5-20nm thick; the ferro-electricity is 200-500nm thick; the up buffer layer is 100-200nm thick; the up electrode metal layer is 80-150nm thick. The inventive capacitor has low fatigue speed, low drain current. The invention uses magnetic control splash method to layer-to-layer splash production, while the product has better property, with single direction.

Description

technical field [0001] The invention relates to a ferroelectric film capacitor and a preparation method thereof. Background technique [0002] Compared with traditional semiconductor memory, ferroelectric random access memory (FeRAM) has many outstanding advantages, and has broad application prospects and huge economic benefits. PZT ferroelectric capacitors with metal Pt / ferroelectric film / metal Pt (MFM) structure as the main storage medium of FeRAM have a large fatigue rate and poor leakage current characteristics, and ferroelectric films prepared directly on metal Pt The crystallization performance is poor, which affects the performance of the material. If the oxide electrode is directly used, it is not only difficult to prepare, but the ferroelectric thin film prepared on it generally has a large leakage current. [[1] Eshita T., FRAM Reliability Issues and Improvement for Advanced FeRAM, ISIE2005 shanghai, 2005, 4, 23. [2] Wouters Dirk, High Density FeRAM Process Integr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L27/04H01L21/8247H01L21/822H01L21/02
Inventor 于军王耘波彭刚周文利高俊雄
Owner HUAZHONG UNIV OF SCI & TECH
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