A kind of single-phase multiferroic thin film and its preparation method and application

A multiferroic and thin-film technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problem that it is difficult to obtain uniform and dense, and achieve the effect of wide application prospects

Active Publication Date: 2020-09-18
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0003] Therefore, in view of the problems that it is difficult to obtain a uniform and compact single-phase thin film with excellent multiferroic properties at room temperature in the existing technology, the object of the present invention is to provide a single-phase multiferroic thin film and its preparation method. The method has unique advantages in the preparation of complex oxide films, and the film growth can be precisely controlled during the preparation process

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  • A kind of single-phase multiferroic thin film and its preparation method and application
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  • A kind of single-phase multiferroic thin film and its preparation method and application

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preparation example Construction

[0032] The invention provides a method for preparing a single-phase multiferroic film. The preparation method uses a pulsed laser deposition method to prepare a single-phase multiferroic film with a suitable target. The preparation method includes the following steps: cleaning the substrate , and then place the target and the substrate in the coating chamber, and adjust the pressure in the chamber at 1×10 -4 Torr below. When the pressure drops to the requirement, turn on the heater, raise the temperature of the substrate to 480-650°C, and then fill the chamber with O 2 , and adjust the pressure in the chamber at 1-10×10 -2 Torr range. When the pressure and temperature are stable, adjust the distance between the substrate and the target, and adjust the spin rate of the substrate and target; then adjust the repetition rate and pulse energy of the laser. When the equipment parameters are adjusted to the required range, rotate the baffle to block the substrate, start pre-sputte...

Embodiment 1

[0052] Single-phase multiferroic thin films (1-x)BiTi (1-y) / 2 Fe y Mg (1-y) / 2 o 3-x CaTiO 3 (x=0.05, y=0.25) preparation method, the substrate is Pt / Si, and the target is (1-m)BiTi (1-n) / 2 Fe n Mg (1-n) / 2 o 3-m CaTiO 3 (m=0.05, n=0.25) ceramic target. Using a pulsed laser deposition system to prepare the film, the specific steps include:

[0053] 1. Clean the substrate;

[0054] 2. Place the target and substrate in the coating chamber and adjust the pressure to 1×10 -4 Below Torr;

[0055] 3. Raise the temperature of the substrate to 500~520°C;

[0056] 4. Fill the chamber with oxygen and adjust the air pressure in the chamber to be 1-10×10 -2 Within the Torr range, wait for the pressure and temperature to stabilize;

[0057] 5. Adjust the rotation of the substrate and the target, the distance between the substrate and the target is 6cm, adjust the repetition frequency of the laser to 50Hz, and the pulse energy to 94-100mJ;

[0058] 6. Deposit the film for 20 mi...

Embodiment 2

[0060] Single-phase multiferroic thin films (1-x)BiTi (1-y) / 2 Fe y Mg (1-y) / 2 o 3-x CaTiO 3 (x=0.15, y=0.25) preparation method, the substrate is Pt / Si, and the target is (1-m)BiTi (1-n) / 2 Fe n Mg (1-n) / 2 o 3-m CaTiO 3 (m=0.15, n=0.25) ceramic target. Using a pulsed laser deposition system to prepare the film, the specific steps include:

[0061] 1. Clean the substrate;

[0062] 2. Place the target and substrate in the coating chamber and adjust the pressure to 1×10 -4 Below Torr;

[0063] 3. Raise the temperature of the substrate to 500~520°C;

[0064] 4. Fill the chamber with oxygen and adjust the air pressure in the chamber to be 1-10×10 -2 Within the Torr range, wait for the pressure and temperature to stabilize;

[0065] 5. Adjust the rotation of the substrate and the target, the distance between the substrate and the target is 6.5cm, adjust the repetition frequency of the laser to 50Hz, and the pulse energy to 94-100mJ;

[0066] 6. Deposit the film for 20 ...

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Abstract

The invention discloses a preparation method of a single-phase multiferroic thin film. The preparation method comprises the steps that after a substrate is cleaned, a target material and the substrateare put into a coating cavity, and the pressure intensity in the cavity is adjusted; the temperature of the substrate is increased, then the cavity is filled with O2, and the pressure intensity in the cavity is adjusted; the distance between the substrate and the target material is adjusted, and the substrate and the target material are adjusted to rotate; the repetition frequency and pulse energy of a laser are adjusted; thin film deposition is conducted, and then heat preservation is conducted; and after heat preservation, cooling is conducted to the room temperature. The chemical composition of the target material is (1-m)BiTi(1-n) / 2FenMg(1-n) / 2O3-mCaTiO3, wherein 0<m<1, and 0<n<1. The preparation method provided by the invention has unique advantages when a thin film containing complex oxide is prepared, and the growth of the thin film can be precisely controlled in the preparation process. The invention further provides the single-phase multiferroic thin film and the applicationof the single-phase multiferroic thin film in an electronic device. The prepared thin film is compact and uniform, has ferroelectricity, ferromagnetism and magnetoelectric mutual controllability at the same time under room temperature, can be used in the electronic device containing a thin film, and has wide application prospects.

Description

technical field [0001] The invention relates to the technical field of material preparation, and more specifically, to a single-phase multiferroic thin film and its preparation method and application. Background technique [0002] Multiferroic material is a new type of multifunctional material with two or more ferrotypes such as ferromagnetism, ferroelectricity and ferroelasticity at the same time, and due to the coupling between various ferrotypes, it will also produce piezomagnetic effect, The magnetoelectric effect and magnetron polarization reversal effects have broad application prospects in the fields of data storage, spintronics, and microelectronics, and have attracted widespread attention. However, the Curie temperature of most single-phase multiferroic materials is lower than room temperature, and ferromagnetism cannot be obtained at room temperature. Therefore, single-phase materials that can simultaneously obtain high ferroelectric polarization and magnetism at ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 贾婷婷刘聪姚竣翔樊子冉程振祥
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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