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Method for preparing acicular and fungiform Bi2O3 nano materials

A nanomaterial, mushroom-shaped technology, applied in the field of nanomaterial preparation, can solve the problems of high energy consumption and harsh conditions, and achieve the effects of lowering reaction temperature, saving energy and novel appearance.

Inactive Publication Date: 2012-11-28
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a needle-shaped, mushroom-shaped Bi 2 o 3 The preparation method of nanometer material, this method will Bi 2 o 3 The growth temperature is lowered to 350 °C, which solves the existing Bi 2 o 3 The preparation method of nanomaterials has harsh conditions and high energy consumption, and thus can be compatible with existing silicon-based semiconductor processes

Method used

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  • Method for preparing acicular and fungiform Bi2O3 nano materials
  • Method for preparing acicular and fungiform Bi2O3 nano materials
  • Method for preparing acicular and fungiform Bi2O3 nano materials

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Experimental program
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Effect test

Embodiment 1

[0027] LaNiO 3 The film, that is, the substrate, was rinsed with absolute ethanol, dried with nitrogen, placed on the sample tray, and sent to the vacuum reaction chamber of the atomic layer deposition system, and vacuumed to make the vacuum degree reach 3hpa.

[0028] The substrate fixed on the sample tray in the vacuum reaction chamber was heated to keep it at 350°C; the source bottle containing the bismuth source was heated to keep its temperature at 190°C; the source bottle containing deionized water was kept at At room temperature; Nitrogen is introduced into the deposition system with a purity of 99.999%, so that the pressure in the reaction chamber and the intermediate space are kept at 3hpa and 15hpa respectively.

[0029] Nitrogen is used as the carrier gas, and the two sources of bismuth and water are sent into the vacuum reaction chamber sequentially through the pipeline in a pulsed manner. Specifically, each growth cycle includes the following four pulses:

[0030...

Embodiment 2

[0037] LaNiO 3 That is, the substrate is rinsed with absolute ethanol, dried with nitrogen, placed on a sample tray, and sent to the vacuum reaction chamber of the atomic layer deposition system, and vacuumed to make the vacuum degree reach 1hpa.

[0038] The substrate fixed on the sample tray in the vacuum reaction chamber was heated to keep it at 350°C; the source bottle containing the bismuth source was heated to keep its temperature at 180°C; the source bottle containing deionized water was kept at At room temperature; nitrogen or argon gas is introduced into the deposition system with a purity of 99.999%, so that the pressure in the reaction chamber and the intermediate space are kept at 3hpa and 12hpa respectively.

[0039] Using nitrogen as the carrier gas, the two sources of bismuth and water are sequentially sent into the vacuum reaction chamber through the pipeline in a pulsed manner. Specifically, each growth cycle includes the following four pulses:

[0040] a. Tr...

Embodiment 3

[0047] Rinse the ITO (indium tin oxide) thin film, that is, the substrate, with absolute ethanol, dry it with nitrogen, place it on the sample tray, and send it to the vacuum reaction chamber of the atomic layer deposition system, and vacuumize it to reach a vacuum degree of 2hpa.

[0048] The substrate fixed on the sample tray in the vacuum reaction chamber was heated to keep it at 350°C; the source bottle containing the bismuth source was heated to keep its temperature at 170°C; the source bottle containing deionized water was kept at At room temperature; the deposition system is fed with argon gas with a purity of 99.999%, so that the pressure in the reaction chamber and the intermediate space are kept at 2hpa and 8hpa respectively.

[0049] Using argon as the carrier gas, the two sources of bismuth and water are sequentially sent into the vacuum reaction chamber through the pipeline in a pulsed manner. Specifically, each growth cycle includes the following four pulses:

[00...

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Abstract

The invention discloses a method for preparing acicular and fungiform Bi2O3 nano materials, which is implemented by taking tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) bismuth, deionized water and substrates as raw materials through the steps of sequentially feeding the raw materials in a pulse mode, then carrying out surface adsorption chemical reaction on the obtained products so as to obtain the acicular and fungiform Bi2O3 nano materials. The method disclosed by the invention is implemented by using a chemical vapor deposition system or an atomic layer deposition system. The method has the advantages of low reaction temperature, simple growth condition, high repeatability, no impurity, high controllability and the like; and the prepared Bi2O3 nano materials have a wide application prospect in the fields of sensors, catalysts, and the like.

Description

technical field [0001] The present invention relates to a kind of preparation method of nanometer material, specifically a kind of needle shape, mushroom shape Bi 2 o 3 Preparation methods of nanomaterials. technical background [0002] Nanomaterials have excellent properties such as photocatalytic activity, photoelectric conversion characteristics and light absorption characteristics, which have attracted great attention from physics, chemistry and material scientists. Bi 2 o 3 Mainly used in chemical industry, glass industry, electronics industry and other industries. Among them, the electronics industry is the most widely used industry for bismuth oxide, mainly used in electronic ceramic powder materials, electrolyte materials, optoelectronic materials, high-temperature superconducting materials, catalysts, etc. [0003] Recently, various methods (laser burning, high-temperature bismuth oxide metal vapor, high-temperature chemical vapor deposition, etc.) 2 o 3 Nano...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/16C30B29/62C23C16/40C23C16/455C23C16/46C01G29/00
Inventor 沈育德李亚巍褚君浩
Owner EAST CHINA NORMAL UNIV
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