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A kind of perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of sensitivity to humidity, poor stability of battery devices, and poor crystallization quality of perovskite layers, and achieve the effect of reducing defect density and simple operation

Active Publication Date: 2021-12-07
WUHAN UNIV OF TECH
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Problems solved by technology

However, there are still some problems that need to be overcome in all-inorganic perovskite solar cells, such as poor crystallization quality of the perovskite layer and sensitivity to humidity, resulting in poor stability of the battery device, and the efficiency needs to be further improved, etc.

Method used

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  • A kind of perovskite solar cell and preparation method thereof
  • A kind of perovskite solar cell and preparation method thereof
  • A kind of perovskite solar cell and preparation method thereof

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Embodiment 1

[0028] The present invention provides an all-inorganic perovskite solar cell, such as figure 1 As shown, the perovskite solar cell includes a substrate 1 and TiO attached on the substrate 1 in turn 2 Electron transport layer 2, CsPbI 3 Perovskite layer 3 , hole transport layer 4 and metal electrode 5 .

[0029] The substrate 1 shown is FTO conductive glass. The thickness of the FTO conductive glass is preferably 350-400 nm, and the deposition process is magnetron sputtering. In the present invention, there is no special requirement on the source of the FTO conductive glass, and the source of the FTO conductive glass known to those skilled in the art can be used.

[0030] The perovskite solar cell of the present invention comprises TiO deposited on FTO conductive glass 2 Floor. The TiO 2 The layer thickness is preferably from 30 to 50 nm. The film preparation process used is liquid phase deposition: using TiCl 4 Preparation of TiO 2 2H 2 O mother liquor, take an appro...

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Abstract

The invention provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a substrate and an electron transport layer, a CsPbI layer disposed on the substrate in sequence 3 Perovskite layer, hole transport layer and metal electrode; The CsPbI 3 The preparation method of the perovskite layer is as follows: firstly, CsI and PbI are vapor-deposited simultaneously by dual heat sources. 2 Solid powder particles, one-step preparation of CsPbI 3 Precursor thin film; then adopt the step type annealing process to form the film. The present invention can directly prepare high-quality CsPbI in one step by utilizing dual-source co-evaporation 3 Compared with the widely used one-step spin coating method, this method is not only simple to operate, but also more suitable for obtaining high-purity, large-area films, and can control the thickness and shape of the film. At the same time, the gradient thermal annealing treatment can precisely control the growth of the crystal, reduce the defect density, and then construct high-quality CsPbI 3 film.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method thereof. Background technique [0002] In recent years, organic-inorganic hybrid perovskite solar cells have attracted the interest of researchers due to their advantages such as low band gap, high carrier mobility and high light absorption, but the most advanced organic lead halide perovskite The efficiency of solar cells (certified) has reached more than 70% of the theoretical limit, and the efficiency of all-inorganic CsPbI is very high X Br 3-X The cells were below 60 percent of their theoretical limit, highlighting their potential for greater efficiency gains. Compared with the organic-nonpolar hybrid perovskite (100°C), the all-inorganic perovskite has excellent thermal stability, and its heat-resistant temperature can reach more than 300°C. Therefore, the many advantages of all-inorganic perovskite materials make them...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/072
CPCH01L31/032H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 鄢永高余力李蔚
Owner WUHAN UNIV OF TECH
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