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Band gap reference source eliminating bulk effect

A body effect, reference source technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve problems such as poor performance of reference voltage sources, reduce layout area, high power supply rejection ratio, and eliminate substrates The effect of the moderating effect

Inactive Publication Date: 2015-11-25
GUILIN UNIV OF ELECTRONIC TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is that the performance of the existing reference voltage source is not good enough to provide a bandgap reference source that eliminates the body effect, which can work in the sub-threshold region

Method used

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  • Band gap reference source eliminating bulk effect

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Embodiment Construction

[0020] Below in conjunction with accompanying drawing and embodiment, describe technical solution of the present invention in detail:

[0021] A bandgap reference that eliminates body effects, such as figure 1 As shown, it includes a start-up circuit, a nanoampere reference current generation circuit, a temperature compensation circuit and a current mirror. Utilize the working characteristics of MOS in the sub-threshold region to generate nanoampere reference currents, use cascode current mirrors to suppress power supply noise, and use source-coupled differential pairs to replace the resistors and Bipolar used in traditional bandgap voltage sources The transistor eliminates the influence of the body effect, adopts the method of mutual adjustment between the gate-source voltage of the MOS with a negative temperature coefficient and the gate-source voltage difference of the MOS transistor with a positive temperature coefficient, and obtains a reference voltage with zero temperat...

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Abstract

The invention discloses a band gap reference source eliminating the bulk effect. The band gap reference source eliminating the bulk effect comprises a starting circuit, a nanoampere magnitude-order reference current generating circuit, a temperature compensating circuit and a current mirror. By means of the MOS work characteristics of work in a sub-threshold area, a nanoampere magnitude-order reference current is generated, the cascade current mirror is adopted, power source noise is inhibited, a source electrode coupling differential pair is used for replacing a resistor and a Bipolar transistor adopted in a traditional band gap voltage source, and influences of the bulk effect are eliminated. The method that a MOS gate-to-source voltage with a negative temperature coefficient and a MOS gate-to-source voltage difference with a positive temperature coefficient are mutually adjusted is adopted so that a zero-temperature-drift reference voltage is obtained.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a bandgap reference source for eliminating body effect. Background technique [0002] In the field of analog integrated circuit and hybrid integrated circuit design, the reference voltage source is a very important module, commonly used in circuit systems such as analog-to-digital converters (ADC), digital-to-analog converters (DAC), DC-DC converters, and power amplifiers. , its function is to provide a voltage reference for the system that does not vary with temperature and power supply voltage. [0003] Since the bandgap reference voltage source architecture was proposed, due to its superior performance, the bandgap reference voltage source has been widely used in many systems, and many improvement schemes have been proposed for this architecture. However, with the continuous increase of integrated circuit system integration, low voltage and low power consumption becom...

Claims

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Application Information

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IPC IPC(8): G05F3/26
Inventor 段吉海朱智勇徐卫林韦保林
Owner GUILIN UNIV OF ELECTRONIC TECH
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