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Bandgap voltage generator with curvature compensation

A technology of voltage generator and curvature compensation, which is applied in the circuit field to achieve the effect of increasing the temperature coefficient and eliminating the second-order temperature modulation effect

Active Publication Date: 2010-03-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the power supply voltage is lower than 1.2V, it is no longer possible to use the conventional structure

Method used

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  • Bandgap voltage generator with curvature compensation
  • Bandgap voltage generator with curvature compensation
  • Bandgap voltage generator with curvature compensation

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Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0027] The bandgap voltage generator provided by the present invention is as figure 2 As shown, including PMOS transistors P1-P4, transistors Q1-Q4, resistors R1-R4, and amplifiers;

[0028] Among them, the sources of the PMOS transistors P1-P4 are connected to the power supply, the drain of the PMOS transistor P1 is connected to the emitter of the transistor Q1 and the negative input terminal of the amplifier, and the gates of the PMOS transistors P1-P4 are connected to the output terminal of the amplifier. The collectors and bases of Q1-Q4 are grounded; the drain of PMOS transistor P2 is connected to the positive input terminal of the amplifier, and connected to the emitter of transistor Q2 through resistor R1; the drain of PMOS transistor P4 is connected to the emitter of transistor Q4 connected, and connected to the drain of PMOS transistor P3 through r...

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PUM

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Abstract

The invention relates to a bandgap voltage generator with curvature compensation, which comprises PMOS pipes P1-P4, transistors Q1-Q4, resistors R1-R4 and an amplifier, wherein the source electrodes of the PMOS pipes P1-P4 are connected with a power supply, the drain electrode of the PMOS pipe P1 is connected with the emitter electrode of the transistor Q1 and the negative input end of the amplifier, the grid electrodes of the PMOS pipes P1-P4 are all connected with the output end of the amplifier, and the collector electrodes and the base electrodes of the transistors Q1-Q4 are all grounded;the drain electrode of the PMOS pipe P2 is connected with the positive input end of the amplifier and is connected with the emitter electrode of the transistor Q2 by the resistor R1; the drain electrode of the PMOS pipe P4 is connected with the emitter electrode of the transistor Q4 and is connected with the drain electrode of the PMOS pipe P3 by the resistor R4; the drain electrode of the PMOS pipe P3 is connected with the emitter electrode of the transistor Q3 by the resistor R2 and is grounded by the R3; and the output end of the bandgap voltage generator is connected with the drain electrode of the PMOS pipe P3. The bandgap voltage generator provided by the invention can work under the voltage of 1V and can enhance the temperature coefficient obviously.

Description

technical field [0001] The invention relates to the field of circuits, in particular to a curvature compensation bandgap voltage generator. Background technique [0002] Bandgap voltage generators are important components in analog systems. A bandgap voltage generator with a conventional structure can output a reference voltage of about 1.2V, which has the lowest sensitivity to temperature variation. When the power supply voltage is lower than 1.2V, the conventional structure can no longer be used. [0003] A bandgap voltage generator with a conventional structure such as figure 1 As shown, including PMOS transistors P1-P3, transistors Q1-Q3, resistors R1-R3, and amplifiers; [0004] Among them, the sources of the PMOS transistors P1-P3 are connected to the power supply voltage, the drain of the PMOS transistor P1 is connected to the emitter of the transistor Q1 and the negative input terminal of the amplifier, and the gates of the PMOS transistors P1-P3 are connected to ...

Claims

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Application Information

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IPC IPC(8): G05F3/16
Inventor 段新东
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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