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CMOS (Complementary Metal-Oxide Semiconductor) band-gap reference voltage generation circuit

A technology of reference voltage and circuit generation, applied in the fields of microelectronics and solid-state electronics, to achieve the effect of improving stability and eliminating the effect of second-order temperature modulation

Inactive Publication Date: 2010-09-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a reference voltage generation circuit to solve the problem that the transistor voltage in the reference voltage generation circuit does not change linearly with temperature and the prior art only removes the temperature modulation effect

Method used

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  • CMOS (Complementary Metal-Oxide Semiconductor) band-gap reference voltage generation circuit
  • CMOS (Complementary Metal-Oxide Semiconductor) band-gap reference voltage generation circuit
  • CMOS (Complementary Metal-Oxide Semiconductor) band-gap reference voltage generation circuit

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Embodiment Construction

[0021] Below in conjunction with accompanying drawing, the present invention is further elaborated.

[0022] First, please refer to figure 2 , figure 2 It is a schematic structural diagram of the CMOS bandgap reference voltage generation circuit of the present invention, as can be seen from the figure, the present invention includes: a first CMOS M1, a second CMOS M2 and a third CMOS M3, the source of the first CMOS M1, The source of the second CMOS M2 is connected to the source of the third CMOS M3, the base of the first CMOS M1, the base of the second CMOS M2 and the base of the third CMOS M3 connected; the first transistor Q1 and the second transistor Q2, the collector and base of the first transistor Q1 and the collector and base of the second transistor Q2 are grounded, and the The emitter of the first transistor Q1 is connected to the drain of the first CMOS M1, the emitter of the second transistor Q2 is connected to the drain of the second CMOS M2; the amplifier S, ...

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Abstract

The invention provides a CMOS (Complementary Metal-Oxide Semiconductor) band-gap reference voltage generation circuit for output of the reference voltage, comprising a first CMOS, a second CMOS, a third CMOS, a first triode, a second triode, an amplifier and a fourth CMOS. The base electrode of the fourth CMOS is connected with the output end of the amplifier, the source electrode of the fourth CMOS is connected with the source electrodes of the first CMOS, the second CMOS and the third CMOS, the base electrode and the connecting electrode of the third triode are grounded. The emitting electrode of the third triode is connected with the drain electrode of the fourth CMOS. The CMOS band-gap reference voltage generation circuit, by adding a branch and a plurality of resistors, eliminates the second-order temperature modulation effect of the triode in the original circuit effectively and improves the stability of the band-gap reference voltage generation circuit.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and solid electronics, and relates to a voltage reference source circuit of an integrated circuit, in particular to a CMOS bandgap reference voltage generating circuit. Background technique [0002] The reference voltage source is a key module widely used in analog circuit design. It can provide high-precision and high-stability reference power supply. The reference voltage source has little correlation with power supply, process parameters and temperature, but the generated reference voltage accuracy, temperature stability and anti-noise ability directly affect the accuracy and performance of the entire circuit system. Therefore, it is of great significance to design a high-performance reference voltage source. [0003] Since Robert Widla proposed the bandgap reference voltage source in 1971, compared with other types of reference voltage sources, the bandgap reference voltage source ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/30
Inventor 段新东
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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