118 results about "Audion" patented technology

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

The present invention discloses a high-voltage op-amp-free voltage-stabilizing startup circuit and a voltage-stabilizing startup method thereof. The circuit includes a voltage-stabilizing circuit and a startup circuit. The startup circuit generates a bias current Ibias2. In the voltage-stabilizing circuit, a transistor Q7 and a PMOS transistor PDM2 form a first common-emitter amplifier, an NMOS transistor NDM2 and a PMOS transistor PDM3 form a first common-source amplifier, and a PMOS transistor PDM4, a transistor Q6, a resistor R4, and a transistor Q5 form a second common-source amplifier. The present invention does not require the additional design of a pre-voltage-stabilizing circuit and a high-voltage operational amplifier, thereby saving chip area. Furthermore, after the voltage-stabilizing startup circuit is started, the startup circuit does not need to be shut down.

The invention discloses a temperature measurement method, system, medium and equipment integrating a terminal and an electric energy meter, and the method comprises the steps: obtaining a basic temperature value through measuring the voltage difference of a PN junction of a voltage difference triode based on a dynamic matching method; a pre-stored segmentation error compensation model is called to correct the basic temperature value, and a final temperature value is output; through collaborative design of a dynamic matching method and a segmented error compensation model, the problem of full-temperature-range measurement error caused by dynamic change of saturation current IS in operation is solved. Compared with a mode of correcting the saturation current IS initial value only through factory single-point fine adjustment in the prior art, the embodiment of the invention can effectively cope with the dynamic fluctuation of the saturation current IS parameter in the operation process, thereby realizing more stable temperature measurement.

This application provides an ESD protection structure for nanoscale process technology, comprising an RC detection structure and a protective NPN transistor. A trigger source based on the P+ diffusion region in the protective NPN transistor is connected to the RC detection structure. Once static electricity is generated, the detection current generated by the RC detection circuit enters the protective NPN transistor through the trigger source, generating a current flowing from the trigger source to the P- epitaxial layer. When the voltage generated by the P- epitaxial resistor and this current reaches the NPN transistor's turn-on voltage, the protective NPN transistor conducts to discharge the ESD current. The protective NPN transistor in this application is triggered to conduct through the transistor's substrate. Because the protective NPN transistor lacks the lightly doped drain structure (LDD) produced by standard process technology, and the ESD current is discharged through the parasitic NPN transistor substrate rather than concentrated on the diffusion region channel surface, it can provide relatively high ESD protection capability with a relatively small layout area, making it more suitable for high-density chips and nanoscale process technology.

The invention discloses a programmable current-limiting regulation output circuit and a control method, which are used in the field of electronic measurement circuits. The circuit comprises a power supply end, a reference voltage input end, a digital-to-analog converter, a sampling resistor, a comparator, a first triode, a second triode, an output control transistor and a voltage output end. The base electrode of the first triode is connected to the output end of the digital-to-analog converter, the emitter electrode is connected to the power end, the collector electrode is connected to the first input end of the comparator, the second input end of the comparator is connected to the voltage output end through the sampling resistor, and the output end of the comparator is connected to the base electrode of the second triode. The collector of the second triode is connected to the reference voltage input end, the emitter is connected to the voltage output end, the gate of the output control transistor is connected to the reference voltage input end, the drain is connected to the power supply end, and the source is connected to the voltage output end.

The utility model discloses a surge current suppression circuit suitable for high-voltage input, which belongs to the technical field of power electronics and comprises an MOS (metal oxide semiconductor) tube, a triode, a first capacitor and a second capacitor. A collector electrode of the triode is connected to a power supply positive electrode line through a resistor, an emitter electrode of the triode is connected to a power supply negative electrode line, a base electrode of the triode is divided into two paths, one path of the base electrode of the triode is connected with a source electrode of the MOS tube through a sixth resistor, and the other path of the base electrode of the triode is connected with a drain electrode of the MOS tube through a fourth resistor; one end of the first capacitor is connected between the second resistor and the first resistor, and the other end of the first capacitor is connected to the power supply cathode line; and the MOS tube is connected to a power supply cathode line. Compared with the prior art, the circuit does not need an auxiliary power supply and an operational amplifier circuit, so that the cost and the arrangement space are saved, the related requirements of GJB181A-2003 on the input current are met, and the power supply and front-end equipment can be protected.

The invention discloses a transimpedance amplifier insensitive to high light intensity, which comprises an input signal amplification structure and a double-end output structure which are connected with each other, the double-end output structure is also connected with a current bias structure, and the current bias structure is used for providing stable bias current irrelevant to a triode amplification coefficient for the input signal amplification structure. And under the condition that no signal is input, the output reference voltage is equal to the output voltage, and the input signal amplification structure is used for providing a corresponding amplification factor for a wide-range input signal. According to the transimpedance amplifier insensitive to high light intensity, under the condition that the light intensity is large, the triodes enter a saturation region, the output voltage is divided by the resistors and clamped at the lowest output voltage, and the output voltage is prevented from being lower than the common-mode input range of a post-amplifier; when the input optical signal disappears, that is, the output signal is strained to be a high level, the level jump speed is improved through the rapid discharge path.

The application relates to an actively detected power state detection system and method, which comprises at least two groups of symmetrically arranged triode modules, an optical coupling isolation module and a MOS tube driving module; the MOS tube driving module is connected with a signal input end through double channels and is used for receiving active monitoring electric signals; when the double channels of each MOS tube driving module simultaneously receive the same active monitoring electric signals, the MOS tube driving module converts the active monitoring electric signals into detection pulses and sends the detection pulses to the optical coupling isolation module to conduct short-time detection on the power state; the optical coupling isolation module is used for isolating the MOS tube driving module from the measured power supply and transmitting the detection pulses from the MOS tube driving module; only one group of optical coupling isolation modules can be turned on at the same time in the system; the triode module is connected with a signal output end through double channels and is used for acquiring and outputting the power state to be measured. Compared with the prior art, the application can actively control the power state detection and conduct self-detection.

The utility model discloses a button signal identification circuit based on triode control, which relates to the field of button signal identification, and is characterized in that each button is associated with a voltage dividing unit through a corresponding triode, and the triode controls the corresponding voltage dividing unit to work according to the state of the button, so that when the button is pressed down, the voltage dividing unit can be adjusted according to the state of the button. The corresponding voltage dividing unit can generate and output a voltage signal corresponding to the key; that is to say, the key does not directly participate in the voltage division loop, but indirectly influences the voltage output in the circuit by controlling the conduction state of the triode, so that the state identification of the key does not depend on the contact impedance between the golden finger and the conductive rubber any more, and the condition that the key cannot be damaged even under the condition that the fluctuation of the contact impedance is large is ensured. And the circuit can accurately identify the key state without generating false triggering.

The present invention discloses a low self-heating constant temperature difference control circuit and control method for compensating for process errors in a thermal flowmeter. The circuit comprises a heating resistor, an ambient temperature resistor, a control resistor, a starting resistor, a first potentiometer, a second potentiometer, first to sixth resistors, a transistor, a first operational amplifier, a second operational amplifier, a third operational amplifier, and a power supply. The third operational amplifier uses negative feedback to control a Wheatstone bridge circuit composed mainly of the first resistor, the second resistor, the heating resistor, and the ambient temperature resistor to maintain a balanced state. The third to sixth resistors reduce the heating power of the ambient temperature resistor through voltage division. The resistance values ​​of the first and second potentiometers are adjustable, thereby compensating for errors in the resistance and temperature coefficients of the heating and ambient temperature resistors that occur during processing. The present invention can more accurately control the overheat temperature of the heating resistor to be constant, thereby improving measurement accuracy.

The invention discloses a temperature compensation band-gap reference circuit, relates to the technical field of analog integrated circuits, and aims to solve the problem that a traditional band-gap reference circuit is large in temperature drift due to the fact that the traditional band-gap reference circuit is affected by a VBE nonlinear high-order term within a wide temperature range. The circuit comprises a bias circuit module, a starting circuit module, a temperature compensation circuit module and a band gap core circuit module. Wherein the bias circuit module provides temperature-insensitive bias current for the system through the current mirror network; the starting circuit module realizes power-on quick starting, normal working zero static power consumption and power-down quick reset by utilizing the synergistic effect of a capacitor and a switch; according to the band-gap core circuit module and the temperature compensation circuit module, nonlinear voltage characteristics are extracted through triode emitter voltage difference, reverse compensation current is introduced through a feedback loop, and a high-order temperature drift item in reference voltage is accurately offset. In addition, the circuit adopts a composite resistor structure in which polycrystalline silicon and diffusion resistors are connected in series, so that process deviation and resistance temperature drift are further inhibited.

The utility model particularly relates to a self-recovery under-voltage protection circuit, which comprises a first VCC end and an OUT end, the VCC end is connected with the OUT end through a field effect transistor Q4, the base electrode of the field effect transistor Q4 is connected with an OP end, the OP end is connected with a control circuit, the circuit forms a control framework through a first triode Q1, a second triode Q2 and a third triode Q3, and the control framework is cooperatively configured with the field effect transistor Q4, so that the self-recovery under-voltage protection circuit is realized. The under-voltage protection function can be achieved only through five core components, the number of components is reduced by more than 40% compared with a traditional discrete component scheme, the circuit complexity and the material cost are remarkably reduced, and the structure is simplified and the cost is optimized.

The application discloses a high-voltage secondary hysteresis electrostatic protection device and a preparation method thereof, and relates to the technical field of semiconductor devices. The high-voltage secondary hysteresis electrostatic protection device comprises at least five P wells and N wells arranged transversely and alternately, and the number of the P wells is one more than that of the N wells; each N well is provided with an alternating structure, the alternating structure comprises at least one first P+ injection area and at least one first N+ injection area arranged longitudinally and alternately; a P well between two adjacent N wells is provided with a second N+ injection area; each alternating structure is connected as a device anode, and the second N+ injection area is connected as a device cathode; the N well, the corresponding first N+ injection area, the adjacent middle P well and the corresponding second N+ area form an NPN triode structure; and the N well, the corresponding first P+ injection area, the adjacent middle P well and the corresponding second N+ area form an SCR path.

The invention belongs to the technical field of semiconductors, and relates to a GaN HEMT device with an adjustable threshold voltage structure. A PNP triode structure is introduced into a grid electrode of the device, an N-end extraction electrode serves as a threshold value control electrode, and a P-end extraction electrode on the topmost layer serves as the grid electrode. The gate voltage of the whole device must exceed the threshold value control electrode voltage and the opening voltage of the top PN junction, so that the channel of the device can be opened. Meanwhile, due to hole injection brought by the BJT structure, the structure of the invention also has a conductivity modulation effect, the transconductance of the device can be improved, and the grid control capability can be enhanced. The device is provided with the externally given threshold control electrode, so that the device can realize adjustable threshold voltage, and different threshold voltages can be realized by applying different voltages through the threshold control electrode.

The utility model relates to the field of switching circuits, in particular to a PMOS (P-channel Metal Oxide Semiconductor) switching circuit, which is characterized in that a source electrode of a PMOS tube Q1 is connected with an input voltage end Vi n, and a drain electrode is connected with a load output end Vout; a base electrode of the triode Q2 receives the switching signal through a control signal end PWR, and an emitting electrode of the triode Q2 is grounded; the first divider resistor R1 is connected between the grid electrode of the PMOS tube Q1 and an input voltage end Vi n; the second divider resistor R2 is connected between the grid electrode of the PMOS tube Q1 and the collector electrode of the triode Q2; the first capacitor C1 is connected between the grid electrode and the source electrode of the PMOS tube Q1; the resistance value ratio of the first divider resistor R1 to the second divider resistor R2 is 1: 3 to 1: 5, the capacitance value of the first capacitor C1 is 10 nF to 100 nF, and the load capacitance C2 does not exceed 470 [mu] F. The voltage division ratio of R1 / R2 is matched with the capacitor C1, so that the conduction time of the PMOS is prolonged, the instantaneous charging current peak value of the load capacitor C2 is remarkably reduced, voltage drop is avoided, and the stability of the system is guaranteed.

The utility model relates to the technical field of input signal control, and discloses a control circuit for an external input signal of an internal connection system, which comprises a resistor R228, a capacitor C241, a triode Q13, a clamping diode D39, a relay K2 and an interface J9. According to the invention, accurate and stable control of external input signals is realized, damage of excessive current to subsequent elements is avoided based on current limiting of control signals, circuit safety is guaranteed, voltage fluctuation is reduced based on voltage stabilization, signal transmission is more stable, voltage abnormity is prevented based on clamping, and the relay K2 is protected. High and low levels are generated to control the switching action of the relay, three switching channels are output to the interface, a control signal is accurately transmitted to external equipment, and the interface is connected with a plurality of signals to adapt to the requirements of different external equipment, so that the problems of poor stability and low precision of a traditional control circuit are solved; and the requirements of external equipment with relatively high signal response requirements are met.

The application discloses a floating ground current output circuit and method for replacing a direct current voltage Hall sensor, and the floating ground current output circuit comprises an operational amplifier, a resistor and a triode; the floating ground current output circuit adopts the operational amplifier virtual short and operational amplifier virtual break principles, converts bidirectional direct current voltage into bidirectional direct current output through the resistor, and expands the current output through the triode. The floating ground current output circuit provided by the application can be combined with a conventional electromagnetic isolation sensor, a photoelectric isolation sensor and a modulation demodulation sensor circuit, can replace the floating ground current output mode of the direct current voltage Hall sensor, can convert bidirectional direct current voltage into bidirectional direct current output, and can control the detection precision within a 0.1% error range. Compared with the floating ground current conversion circuit of the direct current voltage Hall sensor itself, the floating ground current output circuit has the advantages of low temperature drift, high precision and small power consumption.

The utility model provides an overvoltage protection circuit. The circuit comprises a voltage stabilizing tube circuit, a triode sub-circuit and a field effect tube circuit. The first input end of the field effect transistor circuit, the input end of the voltage stabilizing transistor circuit and the first input end of the triode sub-circuit are respectively connected with the output end of the power supply; the output end of the field effect transistor circuit is connected with the input end of the electronic equipment; the first output end of the voltage stabilizing tube sub-circuit is connected with the second input end of the triode sub-circuit; the output end of the triode sub-circuit is connected with the second input end of the field effect transistor circuit; the second output end of the voltage stabilizing tube circuit is connected with the ground. Through cooperation of the circuits, the power supply and the electronic equipment can be conducted when the power supply voltage is smaller than the preset voltage, and the power supply and the electronic equipment can be cut off when the power supply voltage is larger than or equal to the preset voltage; meanwhile, selected electronic devices are low in cost, easy to obtain and convenient to process, so that the production cost of the whole circuit is low.

The application discloses an anti-single-particle-radiation LDMOS device structure and belongs to the technical field of semiconductor power devices. The device comprises a P-type substrate, an N-type buried layer, a P-type epitaxial layer, an N-type deep well, a P-type deep well, an STI shallow trench isolation oxide layer, a gate oxide layer, an HTO oxide layer, polycrystalline silicon, an N-type well region, a P-type well region, a P-type buried layer, an N-type drift region, a P-type body region, a source region N+ injection, a drain region N+ injection, a body region P+ injection, an isolation N+ injection and an isolation P+ injection. The single-drain region is changed into a double-drain region, the parasitic triode is a double-collector, plays a role of current sharing, can reduce a drain end electric field peak, suppresses a Kirk effect and thus improves the anti-single-particle-radiation capability of the device.

The invention discloses a low-cost modular multi-channel analog wake-up circuit device and method. The low-cost modular multi-channel analog wake-up circuit device comprises a voltage sampling circuit and a switch output driving circuit, and the voltage sampling circuit is connected with the switch output driving circuit. The vehicle-mounted system power management and communication integrated chip circuit has the advantages that by means of the voltage sampling circuit and the switch output driving circuit, analog quantity input is converted into digital quantity rising edge signals to wake up the vehicle-mounted system power management and communication integrated chip SBC, and the number of input acquisition circuits can be properly increased to N; the limitation of single input signal processing in the prior art is solved, and the stability, the safety and the efficient triggering of the signal are solved; the resistors, the capacitors, the triodes and the like used in the circuit design all belong to universal components, so that the use of high-cost components is reduced, the development cost is greatly reduced, and the requirements of most application scenes are met.

The invention belongs to the technical field of PWM controller circuits, and particularly relates to a current mode PWM controller. Comprising an oscillator module, an FB detection module, an overload protection module, a hiccup control module and a PWM comparator CMP1, the FB detection module inputs a feedback voltage signal FB through an FB port so as to control the conduction and cut-off of a triode Q1, and outputs three paths of voltage signals to the overload protection module, the hiccup control module and the PWM comparator CMP1; the CS detection module is used for inputting an inductive current signal of an off-chip loop through a CS port, converting the inductive current signal into a voltage signal CS through an off-chip sampling resistor Rd, sending the voltage signal CS into the chip, processing the voltage signal CS through a leading edge blanking circuit, and outputting a signal P876G; the peak current detection module is used for superposing the voltage signal CS and a triangular wave signal N4G output by the oscillator module, then carrying out leading edge blanking switching and then inputting the voltage signal CS and the triangular wave signal N4G to a PWM comparator CMP1; according to the invention, rapid load response can be realized through peak current detection and voltage / current double feedback.

The utility model relates to the technical field of switch power supply circuits, in particular to a residual electricity rapid discharge circuit and a switch thereof. The relay RL1 is used for controlling on and off of a power supply; the bleeder circuit comprises a triode Q1, and a base electrode of the triode Q1 is connected to the control circuit and used for controlling conduction of the bleeder circuit; the control circuit comprises an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) Q2, and a grid electrode of the MOSFET Q2 is connected with an external MCU (Microprogrammed Control Unit) and is used for controlling the conduction state of the triode Q1 during power failure; and the load circuit is connected with the power supply input end VCC-IN and the bleeder circuit, and the load circuit comprises an electrolytic capacitor U1. According to the utility model, through controlling the conduction of the triode Q1, the rapid discharge of residual electricity is realized, the abnormal reset starting problem caused by incomplete power failure when the circuit is connected with the power supply again is avoided, the circuit design is simple and reliable, the realization is easy, and the stability and reliability of the circuit are improved.

The application relates to the technical field of constant current sources, and provides a temperature-independent constant current source, which comprises a positive temperature current generating circuit, a negative temperature current generating circuit and a current summing circuit.The positive temperature current generating circuit comprises a first branch, a second branch and a first resistor, the structure of the first branch and the second branch is an asymmetric structure, and the current flowing through the first branch and the second branch generates a voltage difference on the first resistor, which is proportional to temperature, so as to generate a first current.The negative temperature current generating circuit comprises a transistor or a field effect transistor and a second resistor, and the emitter-base voltage or the gate-source voltage of the transistor or the field effect transistor is applied to the second resistor, so as to generate a second current.The current summing circuit comprises a first current mirror and a second current mirror, and the output current is the sum of the first current and the second current in a mirror ratio.The application has a simple overall structure and wide use conditions.

The present invention discloses a method for detecting ultraviolet flames for a heating furnace burner, comprising the following steps: Step 1: Inputting a 220V AC voltage into a voltage conversion module; Step 2: Connecting a 350V DC power supply to a drive output module to power an ultraviolet light tube; Step 3: Connecting a 12V DC power supply to a signal conversion module to power a chip U1; Step 4: When a flame is established, a current is generated on the ultraviolet light tube, and the current passes through a resistor R4 to generate a pulse voltage; Step 5: Inputting the pulse signal into the signal conversion module to convert the pulse signal into an analog voltage signal and output it to a controller. This method for detecting ultraviolet flames for a heating furnace burner utilizes resistor and capacitor elements to form a filter circuit, effectively suppressing electromagnetic interference in the circuit and improving the accuracy of the detection results. A transistor is used to output a pulse signal in an open-drain form, and the signal conversion module is used to convert the pulse frequency signal into an analog voltage signal, thereby enhancing the signal's anti-interference capability and improving the sensitivity of the detection results.

The application discloses a Micro-LET display pixel driving circuit, and relates to the field of photoelectric display, comprising: a Micro-LET device, a switch compensation circuit; the anode of the Micro-LET device is connected with a high potential of a power supply, and the cathode of the Micro-LET is connected with a low potential of the power supply; the switch compensation circuit comprises: a driving control transistor, a pull-down control transistor, a power supply control transistor, a voltage compensation transistor, a second capacitor, a data signal input control transistor and a first capacitor; the switch compensation circuit is used for compensating the unstable driving current caused by the threshold voltage and the mobility of a thin film transistor; according to the optimization of the traditional Micro-LED pixel driving circuit, the threshold voltage of the driving control transistor is compensated, so that the current flowing through the light-emitting diode is independent of the threshold voltage of the driving control transistor, and through the control of the time sequence, the compensation of the influence of the transistor mobility change can be realized.

The application provides a bidirectional switch device, a terminal structure thereof and an electronic device. The terminal structure comprises a field plate, an end of the field plate extends beyond the edge of a first voltage resistance region and a second voltage resistance region, so that the vertical projection of the field plate divides the base region of a parasitic triode formed by the first voltage resistance region, the well region and the second voltage resistance region; the voltage of the field plate changes with the gate voltage of the switch tube on both sides, so as to relieve the leakage phenomenon of the parasitic triode.

This invention relates to the field of multipliers, and discloses a multiplier circuit and electronic device. The multiplier circuit includes a first transistor to a twelfth transistor. The third terminal of the first transistor, the second terminal of the third transistor, and the first terminal of the tenth transistor are interconnected. The first terminal of the third transistor, the first terminal of the fourth transistor, and the third terminal of the tenth transistor are interconnected. The third terminal of the third transistor, the third terminal of the sixth transistor, the first terminal of the ninth transistor, and the second terminal of the ninth transistor are interconnected. The third terminal of the fourth transistor, the third terminal of the fifth transistor, and the second terminal of the eighth transistor are interconnected. The first terminal of the fifth transistor, the first terminal of the sixth transistor, and the third terminal of the eleventh transistor are interconnected. The third terminal of the second transistor is connected to the second terminal of the sixth transistor. This invention eliminates the deviation caused by the transistor base current and reduces the influence of the Erlich effect by setting the transistor collector voltage.

The application discloses a base current compensation band gap reference voltage source system and a regulation and control method, and relates to the technical field of voltage reference sources.The system comprises a reference voltage generation module and a compensation module, wherein the reference voltage generation module comprises a generating unit and an operational amplifier unit;the base and the collector of a triode Q0 in the generating unit are short-circuited to generate a voltage VN, the base and the collector of a triode Q1 are short-circuited to generate a voltage VP via a resistor R0, and the two emitters are connected; the operational amplifier unit is composed of one triode Q2 as a positive input end and m triodes Q3 as negative input ends; and the compensation module outputs compensation currents to the voltage VN and the voltage VP based on the current environmental temperature.Thus, the triode is used to construct an asymmetric operational amplifier structure, the offset voltage is small, and the output has better consistency; and the compensation unit also outputs compensation currents according to the environmental temperature to perform curvature compensation on the reference voltage, thereby significantly reducing the temperature drift phenomenon caused by environmental temperature changes and process deviations.

The embodiment of the present application provides a cleaning voltage control circuit, a high-voltage plate and electronic equipment. The cleaning voltage control circuit comprises a generation module, a detection module and a protection module. The generation module is used for generating a cleaning voltage according to a control signal of a control module. The cleaning voltage is used for cleaning toner on a transfer body and / or a photoreceptor. The detection module is used for detecting whether the working duration of the generation module exceeds a set duration. The protection module is used for performing protection on the generation module when the working duration exceeds the set duration. The present application detects whether the working duration of the generation module exceeds the set duration, that is, the duration of the cleaning voltage, through the detection module. If the set duration is exceeded, the protection module performs protection on the generation module. The detection module timely identifies the abnormal state of the cleaning voltage and performs protection, thereby avoiding the problems of over-stress of a triode switch and abnormal consumption of toner caused by the abnormal cleaning voltage.

The invention discloses a low-mismatch low-temperature-drift reference voltage source circuit, which is characterized in that positive temperature coefficient current is generated through a main band-gap reference circuit, is copied through a current mirror, is applied to a series of resistor strings, and is superposed with triode base-emitter voltage with negative temperature coefficient characteristics to generate low-temperature-drift reference voltage output. In the positive temperature coefficient current generation module, a self-biased Cascode structure is introduced to be combined with a source electrode degeneration resistor, so that the transconductance difference of a mirror image branch is restrained, and the mismatch error of a current mirror caused by process fluctuation is reduced. And in the mirror image module, multi-gear voltage output is realized through a multi-stage resistor series-parallel network, so that the chip can obtain the lowest temperature drift point by selecting different gear nodes after a production test, and adaptive compensation for process deviation is realized. According to the scheme, digital logic control is not needed, and temperature drift adjustment is completed completely through a simulation structure. And circuit mismatch caused by process errors introduced in the production process is remarkably reduced.