72 results about "Audion" patented technology

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

This application provides an ESD protection structure for nanoscale process technology, comprising an RC detection structure and a protective NPN transistor. A trigger source based on the P+ diffusion region in the protective NPN transistor is connected to the RC detection structure. Once static electricity is generated, the detection current generated by the RC detection circuit enters the protective NPN transistor through the trigger source, generating a current flowing from the trigger source to the P- epitaxial layer. When the voltage generated by the P- epitaxial resistor and this current reaches the NPN transistor's turn-on voltage, the protective NPN transistor conducts to discharge the ESD current. The protective NPN transistor in this application is triggered to conduct through the transistor's substrate. Because the protective NPN transistor lacks the lightly doped drain structure (LDD) produced by standard process technology, and the ESD current is discharged through the parasitic NPN transistor substrate rather than concentrated on the diffusion region channel surface, it can provide relatively high ESD protection capability with a relatively small layout area, making it more suitable for high-density chips and nanoscale process technology.

The utility model discloses a surge current suppression circuit suitable for high-voltage input, which belongs to the technical field of power electronics and comprises an MOS (metal oxide semiconductor) tube, a triode, a first capacitor and a second capacitor. A collector electrode of the triode is connected to a power supply positive electrode line through a resistor, an emitter electrode of the triode is connected to a power supply negative electrode line, a base electrode of the triode is divided into two paths, one path of the base electrode of the triode is connected with a source electrode of the MOS tube through a sixth resistor, and the other path of the base electrode of the triode is connected with a drain electrode of the MOS tube through a fourth resistor; one end of the first capacitor is connected between the second resistor and the first resistor, and the other end of the first capacitor is connected to the power supply cathode line; and the MOS tube is connected to a power supply cathode line. Compared with the prior art, the circuit does not need an auxiliary power supply and an operational amplifier circuit, so that the cost and the arrangement space are saved, the related requirements of GJB181A-2003 on the input current are met, and the power supply and front-end equipment can be protected.

The application relates to an actively detected power state detection system and method, which comprises at least two groups of symmetrically arranged triode modules, an optical coupling isolation module and a MOS tube driving module; the MOS tube driving module is connected with a signal input end through double channels and is used for receiving active monitoring electric signals; when the double channels of each MOS tube driving module simultaneously receive the same active monitoring electric signals, the MOS tube driving module converts the active monitoring electric signals into detection pulses and sends the detection pulses to the optical coupling isolation module to conduct short-time detection on the power state; the optical coupling isolation module is used for isolating the MOS tube driving module from the measured power supply and transmitting the detection pulses from the MOS tube driving module; only one group of optical coupling isolation modules can be turned on at the same time in the system; the triode module is connected with a signal output end through double channels and is used for acquiring and outputting the power state to be measured. Compared with the prior art, the application can actively control the power state detection and conduct self-detection.

The utility model discloses a button signal identification circuit based on triode control, which relates to the field of button signal identification, and is characterized in that each button is associated with a voltage dividing unit through a corresponding triode, and the triode controls the corresponding voltage dividing unit to work according to the state of the button, so that when the button is pressed down, the voltage dividing unit can be adjusted according to the state of the button. The corresponding voltage dividing unit can generate and output a voltage signal corresponding to the key; that is to say, the key does not directly participate in the voltage division loop, but indirectly influences the voltage output in the circuit by controlling the conduction state of the triode, so that the state identification of the key does not depend on the contact impedance between the golden finger and the conductive rubber any more, and the condition that the key cannot be damaged even under the condition that the fluctuation of the contact impedance is large is ensured. And the circuit can accurately identify the key state without generating false triggering.

The invention discloses a temperature compensation band-gap reference circuit, relates to the technical field of analog integrated circuits, and aims to solve the problem that a traditional band-gap reference circuit is large in temperature drift due to the fact that the traditional band-gap reference circuit is affected by a VBE nonlinear high-order term within a wide temperature range. The circuit comprises a bias circuit module, a starting circuit module, a temperature compensation circuit module and a band gap core circuit module. Wherein the bias circuit module provides temperature-insensitive bias current for the system through the current mirror network; the starting circuit module realizes power-on quick starting, normal working zero static power consumption and power-down quick reset by utilizing the synergistic effect of a capacitor and a switch; according to the band-gap core circuit module and the temperature compensation circuit module, nonlinear voltage characteristics are extracted through triode emitter voltage difference, reverse compensation current is introduced through a feedback loop, and a high-order temperature drift item in reference voltage is accurately offset. In addition, the circuit adopts a composite resistor structure in which polycrystalline silicon and diffusion resistors are connected in series, so that process deviation and resistance temperature drift are further inhibited.

The utility model particularly relates to a self-recovery under-voltage protection circuit, which comprises a first VCC end and an OUT end, the VCC end is connected with the OUT end through a field effect transistor Q4, the base electrode of the field effect transistor Q4 is connected with an OP end, the OP end is connected with a control circuit, the circuit forms a control framework through a first triode Q1, a second triode Q2 and a third triode Q3, and the control framework is cooperatively configured with the field effect transistor Q4, so that the self-recovery under-voltage protection circuit is realized. The under-voltage protection function can be achieved only through five core components, the number of components is reduced by more than 40% compared with a traditional discrete component scheme, the circuit complexity and the material cost are remarkably reduced, and the structure is simplified and the cost is optimized.

The application discloses a high-voltage secondary hysteresis electrostatic protection device and a preparation method thereof, and relates to the technical field of semiconductor devices. The high-voltage secondary hysteresis electrostatic protection device comprises at least five P wells and N wells arranged transversely and alternately, and the number of the P wells is one more than that of the N wells; each N well is provided with an alternating structure, the alternating structure comprises at least one first P+ injection area and at least one first N+ injection area arranged longitudinally and alternately; a P well between two adjacent N wells is provided with a second N+ injection area; each alternating structure is connected as a device anode, and the second N+ injection area is connected as a device cathode; the N well, the corresponding first N+ injection area, the adjacent middle P well and the corresponding second N+ area form an NPN triode structure; and the N well, the corresponding first P+ injection area, the adjacent middle P well and the corresponding second N+ area form an SCR path.

The invention belongs to the technical field of semiconductors, and relates to a GaN HEMT device with an adjustable threshold voltage structure. A PNP triode structure is introduced into a grid electrode of the device, an N-end extraction electrode serves as a threshold value control electrode, and a P-end extraction electrode on the topmost layer serves as the grid electrode. The gate voltage of the whole device must exceed the threshold value control electrode voltage and the opening voltage of the top PN junction, so that the channel of the device can be opened. Meanwhile, due to hole injection brought by the BJT structure, the structure of the invention also has a conductivity modulation effect, the transconductance of the device can be improved, and the grid control capability can be enhanced. The device is provided with the externally given threshold control electrode, so that the device can realize adjustable threshold voltage, and different threshold voltages can be realized by applying different voltages through the threshold control electrode.

The utility model relates to the field of switching circuits, in particular to a PMOS (P-channel Metal Oxide Semiconductor) switching circuit, which is characterized in that a source electrode of a PMOS tube Q1 is connected with an input voltage end Vi n, and a drain electrode is connected with a load output end Vout; a base electrode of the triode Q2 receives the switching signal through a control signal end PWR, and an emitting electrode of the triode Q2 is grounded; the first divider resistor R1 is connected between the grid electrode of the PMOS tube Q1 and an input voltage end Vi n; the second divider resistor R2 is connected between the grid electrode of the PMOS tube Q1 and the collector electrode of the triode Q2; the first capacitor C1 is connected between the grid electrode and the source electrode of the PMOS tube Q1; the resistance value ratio of the first divider resistor R1 to the second divider resistor R2 is 1: 3 to 1: 5, the capacitance value of the first capacitor C1 is 10 nF to 100 nF, and the load capacitance C2 does not exceed 470 [mu] F. The voltage division ratio of R1 / R2 is matched with the capacitor C1, so that the conduction time of the PMOS is prolonged, the instantaneous charging current peak value of the load capacitor C2 is remarkably reduced, voltage drop is avoided, and the stability of the system is guaranteed.

The utility model relates to the technical field of input signal control, and discloses a control circuit for an external input signal of an internal connection system, which comprises a resistor R228, a capacitor C241, a triode Q13, a clamping diode D39, a relay K2 and an interface J9. According to the invention, accurate and stable control of external input signals is realized, damage of excessive current to subsequent elements is avoided based on current limiting of control signals, circuit safety is guaranteed, voltage fluctuation is reduced based on voltage stabilization, signal transmission is more stable, voltage abnormity is prevented based on clamping, and the relay K2 is protected. High and low levels are generated to control the switching action of the relay, three switching channels are output to the interface, a control signal is accurately transmitted to external equipment, and the interface is connected with a plurality of signals to adapt to the requirements of different external equipment, so that the problems of poor stability and low precision of a traditional control circuit are solved; and the requirements of external equipment with relatively high signal response requirements are met.

The application discloses a floating ground current output circuit and method for replacing a direct current voltage Hall sensor, and the floating ground current output circuit comprises an operational amplifier, a resistor and a triode; the floating ground current output circuit adopts the operational amplifier virtual short and operational amplifier virtual break principles, converts bidirectional direct current voltage into bidirectional direct current output through the resistor, and expands the current output through the triode. The floating ground current output circuit provided by the application can be combined with a conventional electromagnetic isolation sensor, a photoelectric isolation sensor and a modulation demodulation sensor circuit, can replace the floating ground current output mode of the direct current voltage Hall sensor, can convert bidirectional direct current voltage into bidirectional direct current output, and can control the detection precision within a 0.1% error range. Compared with the floating ground current conversion circuit of the direct current voltage Hall sensor itself, the floating ground current output circuit has the advantages of low temperature drift, high precision and small power consumption.

The application discloses an anti-single-particle-radiation LDMOS device structure and belongs to the technical field of semiconductor power devices. The device comprises a P-type substrate, an N-type buried layer, a P-type epitaxial layer, an N-type deep well, a P-type deep well, an STI shallow trench isolation oxide layer, a gate oxide layer, an HTO oxide layer, polycrystalline silicon, an N-type well region, a P-type well region, a P-type buried layer, an N-type drift region, a P-type body region, a source region N+ injection, a drain region N+ injection, a body region P+ injection, an isolation N+ injection and an isolation P+ injection. The single-drain region is changed into a double-drain region, the parasitic triode is a double-collector, plays a role of current sharing, can reduce a drain end electric field peak, suppresses a Kirk effect and thus improves the anti-single-particle-radiation capability of the device.

The invention discloses a low-cost modular multi-channel analog wake-up circuit device and method. The low-cost modular multi-channel analog wake-up circuit device comprises a voltage sampling circuit and a switch output driving circuit, and the voltage sampling circuit is connected with the switch output driving circuit. The vehicle-mounted system power management and communication integrated chip circuit has the advantages that by means of the voltage sampling circuit and the switch output driving circuit, analog quantity input is converted into digital quantity rising edge signals to wake up the vehicle-mounted system power management and communication integrated chip SBC, and the number of input acquisition circuits can be properly increased to N; the limitation of single input signal processing in the prior art is solved, and the stability, the safety and the efficient triggering of the signal are solved; the resistors, the capacitors, the triodes and the like used in the circuit design all belong to universal components, so that the use of high-cost components is reduced, the development cost is greatly reduced, and the requirements of most application scenes are met.

The utility model relates to the technical field of switch power supply circuits, in particular to a residual electricity rapid discharge circuit and a switch thereof. The relay RL1 is used for controlling on and off of a power supply; the bleeder circuit comprises a triode Q1, and a base electrode of the triode Q1 is connected to the control circuit and used for controlling conduction of the bleeder circuit; the control circuit comprises an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) Q2, and a grid electrode of the MOSFET Q2 is connected with an external MCU (Microprogrammed Control Unit) and is used for controlling the conduction state of the triode Q1 during power failure; and the load circuit is connected with the power supply input end VCC-IN and the bleeder circuit, and the load circuit comprises an electrolytic capacitor U1. According to the utility model, through controlling the conduction of the triode Q1, the rapid discharge of residual electricity is realized, the abnormal reset starting problem caused by incomplete power failure when the circuit is connected with the power supply again is avoided, the circuit design is simple and reliable, the realization is easy, and the stability and reliability of the circuit are improved.

The application relates to the technical field of constant current sources, and provides a temperature-independent constant current source, which comprises a positive temperature current generating circuit, a negative temperature current generating circuit and a current summing circuit.The positive temperature current generating circuit comprises a first branch, a second branch and a first resistor, the structure of the first branch and the second branch is an asymmetric structure, and the current flowing through the first branch and the second branch generates a voltage difference on the first resistor, which is proportional to temperature, so as to generate a first current.The negative temperature current generating circuit comprises a transistor or a field effect transistor and a second resistor, and the emitter-base voltage or the gate-source voltage of the transistor or the field effect transistor is applied to the second resistor, so as to generate a second current.The current summing circuit comprises a first current mirror and a second current mirror, and the output current is the sum of the first current and the second current in a mirror ratio.The application has a simple overall structure and wide use conditions.

The application provides a bidirectional switch device, a terminal structure thereof and an electronic device. The terminal structure comprises a field plate, an end of the field plate extends beyond the edge of a first voltage resistance region and a second voltage resistance region, so that the vertical projection of the field plate divides the base region of a parasitic triode formed by the first voltage resistance region, the well region and the second voltage resistance region; the voltage of the field plate changes with the gate voltage of the switch tube on both sides, so as to relieve the leakage phenomenon of the parasitic triode.

The application discloses a base current compensation band gap reference voltage source system and a regulation and control method, and relates to the technical field of voltage reference sources.The system comprises a reference voltage generation module and a compensation module, wherein the reference voltage generation module comprises a generating unit and an operational amplifier unit;the base and the collector of a triode Q0 in the generating unit are short-circuited to generate a voltage VN, the base and the collector of a triode Q1 are short-circuited to generate a voltage VP via a resistor R0, and the two emitters are connected; the operational amplifier unit is composed of one triode Q2 as a positive input end and m triodes Q3 as negative input ends; and the compensation module outputs compensation currents to the voltage VN and the voltage VP based on the current environmental temperature.Thus, the triode is used to construct an asymmetric operational amplifier structure, the offset voltage is small, and the output has better consistency; and the compensation unit also outputs compensation currents according to the environmental temperature to perform curvature compensation on the reference voltage, thereby significantly reducing the temperature drift phenomenon caused by environmental temperature changes and process deviations.

The invention discloses a low-mismatch low-temperature-drift reference voltage source circuit, which is characterized in that positive temperature coefficient current is generated through a main band-gap reference circuit, is copied through a current mirror, is applied to a series of resistor strings, and is superposed with triode base-emitter voltage with negative temperature coefficient characteristics to generate low-temperature-drift reference voltage output. In the positive temperature coefficient current generation module, a self-biased Cascode structure is introduced to be combined with a source electrode degeneration resistor, so that the transconductance difference of a mirror image branch is restrained, and the mismatch error of a current mirror caused by process fluctuation is reduced. And in the mirror image module, multi-gear voltage output is realized through a multi-stage resistor series-parallel network, so that the chip can obtain the lowest temperature drift point by selecting different gear nodes after a production test, and adaptive compensation for process deviation is realized. According to the scheme, digital logic control is not needed, and temperature drift adjustment is completed completely through a simulation structure. And circuit mismatch caused by process errors introduced in the production process is remarkably reduced.

The application relates to the technical field of capacitor discharge, and discloses a storage energy photovoltaic direct-current high-voltage system bus capacitor discharge circuit which does not need to additionally use a control unit for driving, can reduce loss and heat generation, and prolongs the service life of a device, and comprises a power supply monitoring circuit, a strong current storage energy circuit, a power amplification circuit and a main power discharge circuit. The power supply monitoring circuit comprises a voltage detection module for detecting the voltage of a switching power supply and an optical coupler connected with the power supply detection module and disconnected when the voltage of the switching power supply is lower than a first voltage value. The strong current storage energy circuit comprises a resistance module connected with a bus positive electrode and a first capacitor connected with the resistance module. The power amplification circuit at least comprises a triode connected with the first capacitor, a pull-down resistor connected with the triode and the optical coupler and connected to a bus negative electrode. The main power discharge circuit comprises a MOS tube connected with the triode and a discharge resistor module connected with the MOS tube and used for discharging the bus capacitor.

The utility model relates to a universal test lamp power supply control circuit, which comprises a power supply, a voltage regulation module and a current and voltage test meter, the current and voltage test meter comprises a red meter pen interface, a black meter pen interface, an anode input port and a cathode input port. The voltage regulation module comprises a first resistor, a second resistor, an NPN triode, a third resistor, a first capacitor and a plurality of wires. Each wire comprises a first node, a second node and a third node. The first node is electrically connected with the positive electrode of the power supply; the first resistor is located on the wire between the first node and the third node, the second resistor is located on the wire between the first node and the second node, and the third resistor is located on the wire between the second node and the third node; the base of the NPN triode is connected with the third node, and the collector is connected with the second node; the second node is connected with the positive electrode input port through a wire, and the first capacitor is located on the wire. According to the utility model, the trouble of visual inspection of whether the LED lamps are turned on one by one by staff is avoided, and misjudgment is effectively avoided.

The invention relates to the technical field of switching power supplies, and discloses a transformer valley voltage detection circuit, a driving chip and a switching power supply, the voltage detection circuit comprises a first switching tube NM1, a second switching tube NM2, a third switching tube NM3, a current-limiting resistor R1, a triode Q1 and a voltage detection unit; during use, the triode Q1, the current-limiting resistor R1, the first switch tube NM3, the second switch tube NM3 and the third switch tube NM3 are arranged, when the triode Q1 is turned off, a CB junction stray capacitor of the triode Q1 is connected with the resistor R1 in series, and meanwhile, the CB junction stray capacitor and a T1 primary winding of the transformer form an LC resonant ring; and the flow direction of the current flowing through the resistor R1 is changed, so that the base voltage of the triode Q1 is detected through the voltage detection unit, and the valley voltage detection of the transformer can be obtained.

The application provides a voltage reference circuit, a circuit board and an electronic device, the voltage reference circuit comprising a voltage output unit and a current generation unit; the voltage output unit is configured to output a reference voltage according to a first current on the voltage output unit; the current generation unit comprises a first branch, a second branch and an operational amplifier, and the operational amplifier is configured to adjust the first current according to a second current on the first branch and a third current on the second branch; the application sets that the operational amplifier comprises a first transistor and a second transistor, and the first transistor and the second transistor are triodes, the base of the first transistor is connected with the first branch, and the base of the second transistor is connected with the second branch; that is, the first transistor and the second transistor are input pairs of the operational amplifier, which is conducive to reducing the noise of the reference voltage, and in particular, the 1 / f noise of the reference voltage can be reduced.

The invention discloses an electric energy meter live and null line positive and negative connection detection system and method based on a PCB capacitor, and the system employs a coupling capacitor formed by reference ground laying copper and the ground to construct a signal backflow path, and outputs high and low level signals in combination with the conduction state change of a triode of a signal processing circuit. Signal isolation transmission is realized through an optocoupler device of the isolation circuit, and finally the MCU judges the connection state of the live line and the null line, thereby effectively detecting the reverse connection state of the live line and the null line of the electric energy meter, avoiding the fire hazard of electric appliances caused by manual missing detection, improving the safety performance of the circuit, and greatly facilitating the application and maintenance of the intelligent electric meter.

This application discloses a printed circuit board (PCB) monitoring circuit, method, and electronic device, relating to the field of server technology. The monitoring circuit includes a storage element and at least one voltage monitoring circuit. The input terminal of the voltage monitoring circuit is connected to the corresponding circuit under test (DUT) to obtain the voltage to be monitored in the DUT. The output terminal of the voltage monitoring circuit is connected to the storage element, which stores short-circuit information of the DUT. The voltage monitoring circuit includes a short-circuit isolation circuit, a first resistor, and a transistor. The output terminal of the voltage to be monitored is connected to the first resistor, which is connected to the base of the transistor. The transistor amplifies the analog voltage of the voltage to be monitored. The short-circuit isolation circuit isolates the storage element, allowing it to maintain normal operation during a short circuit. This application can record the location of the short circuit point when a short circuit occurs on a PCBA board.

This utility model relates to the field of DC input circuit technology, and more particularly to a DC multi-input reverse connection protection circuit, including at least two input channels. The positive terminal of each input channel is connected in parallel to a common positive node, and the negative terminal is connected to a common negative node through the drain of an N-MOS transistor. The source of the N-MOS transistor is connected to the negative terminal of the corresponding input channel. A voltage comparator has its input terminals connected to the positive and negative terminals of each input channel, and its output terminal connected to the gate of the corresponding N-MOS transistor. A controllable power supply module consists of a transistor, a Zener diode, a resistor, and a capacitor. Its input terminal is connected to the common positive node, and its output terminal provides voltage to the voltage comparator. The output terminal of the voltage comparator is connected to the gate of each N-MOS transistor to control the mutual exclusion conduction of the multiple input channels. This application improves the voltage drop and heat generation problems caused by using diodes and rectifier bridges to achieve reverse connection protection.

The utility model relates to the technical field of semiconductor testing, solves the technical problems that an over-current protection circuit cannot be automatically controlled and a plurality of sensors are lacked for cooperative detection in the prior art, and particularly relates to a safety protection system for testing a semiconductor device. The safety protection system comprises a micro-processing module, a test instrument and a power supply module for providing power supply current, and further comprises an overcurrent protection circuit, a temperature measurement circuit and an overvoltage protection circuit which are used for protecting the test instrument, the over-current protection circuit is composed of a current-limiting resistor R10, an operational amplifier P1, an operational amplifier P2, a current-limiting resistor R13, a triode Q1, a divider resistor R14, a triode Q2 and a relay, the over-current protection circuit can detect and protect the current of a detection instrument, and through the internal self-locking circuit, external intervention is reduced, the safety of the circuit is improved, and the reliability of the circuit is improved. The operation is simple and the stability is high.

The utility model discloses a self-adaptive temperature control protection structure for an electronic component of a charging pile, and belongs to the technical field of charging guns. The temperature control assembly comprises an air driving assembly, a motor, a capacitor, a temperature sensor, a resistor and a triode, the air driving assembly, the motor, the capacitor, the temperature sensor, the resistor and the triode are all installed in the charging gun, the two ends of the resistor are fixedly connected with the base electrode and the emitting electrode of the triode respectively, and the positive electrode of the capacitor is connected with the collector electrode of the triode. Two ends of the temperature sensor are respectively connected with an emitting electrode of the triode and a negative electrode of the capacitor, positive and negative electrodes of the motor are connected with positive and negative electrodes of the capacitor, the negative electrode of the capacitor is connected with a negative electrode of the power supply, a base electrode of the triode is connected with a positive electrode of the power supply, the motor is connected with the air driving assembly, and an air outlet end of the air driving assembly faces a charging pile electronic component; a flow guiding assembly used for guiding flowing air is installed in the charging gun. According to the utility model, integral self-adaptive temperature control protection is realized.

The invention relates to the technical field of current sharing control, in particular to a current sharing circuit composed of operational amplifiers. Comprising a group of main DCDC modules and at least one group of secondary DCDC modules which form a multi-stage parallel structure, and each group of secondary DCDC modules is provided with a group of operational amplifiers in a one-to-one correspondence manner; the signal end of each operational amplifier is electrically connected with the Vout and the feedback pin of the corresponding secondary DCDC module and the Vout of the primary DCDC module or the secondary DCDC module. The periphery of the operational amplifier realizes sampling, transmission, feedback, filtering and other operations through resistor connection. According to the scheme, triodes and MOS (Metal Oxide Semiconductor) tubes are abandoned, and the current of each parallel structure is actively detected and adjusted through a closed-loop control circuit instead of depending on the physical characteristics of a power device, so that the current is strictly equal; the power loss between DCDC is dispersed, the temperature rise is reduced, and the overall heat dissipation stability is improved; the circuit is simple, few in components and low in cost.

This invention relates to the field of electronic technology and describes a circuit capable of achieving constant current over a wide temperature range. It consists of a constant voltage section and a constant current section. The constant current section is a conventional circuit, and the output of the constant voltage section is connected to the input of the constant current section. The constant voltage section includes a Zener diode, an adjustable resistor, a resistor, an operational amplifier, and a transistor. The Zener diode can be an LED or a standard Zener diode. If the constant voltage section has a constant voltage point relative to VCC, the transistor is a PNP type. In this case, if the Zener diode is an LED, its anode is connected to VCC, and its cathode is connected to the positive input of the operational amplifier and a fixed terminal of the adjustable resistor. Other connection relationships can be adjusted accordingly. Ideally, the current through the Zener diode should be between 0.1 mA and 10 mA. This invention was developed through experimentation. The circuit based on this invention can achieve constant current over a wide temperature range.