182 results about "Audion" patented technology

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

The invention discloses a charge pump switching tube dynamic substrate bias current leakage prevention method and device, and relates to the technical field of charge pumps, the charge pump switching tube dynamic substrate bias current leakage prevention device comprises an MOS switching tube SW1, an MOS switching tube SW2, an MOS switching tube SW3, an MOS switching tube SW4, an energy storage capacitor Cs1 and a two-time positive voltage charge pump circuit of a non-overlapping clock signal CLKP / CLKN, and the source end or the drain end of the charge pump circuit is periodically switched on or off according to the clock signal. By providing a dynamic bias technology of the substrate of the mos switch, the parasitic pnp / npn triode in the mos switch is ensured not to be positively conducted no matter whether the charge pump is provided with a heavy load or a light load, so that the internal node of the charge pump is prevented from leaking large current to the psub / dnw, the driving capability of the charge pump is enhanced, and the reliability of the charge pump is improved. Moreover, the current consumption of the charge pump is reduced, and the efficiency of the charge pump is improved.

The present invention discloses a high-voltage op-amp-free voltage-stabilizing startup circuit and a voltage-stabilizing startup method thereof. The circuit includes a voltage-stabilizing circuit and a startup circuit. The startup circuit generates a bias current Ibias2. In the voltage-stabilizing circuit, a transistor Q7 and a PMOS transistor PDM2 form a first common-emitter amplifier, an NMOS transistor NDM2 and a PMOS transistor PDM3 form a first common-source amplifier, and a PMOS transistor PDM4, a transistor Q6, a resistor R4, and a transistor Q5 form a second common-source amplifier. The present invention does not require the additional design of a pre-voltage-stabilizing circuit and a high-voltage operational amplifier, thereby saving chip area. Furthermore, after the voltage-stabilizing startup circuit is started, the startup circuit does not need to be shut down.

The invention discloses a temperature measurement method, system, medium and equipment integrating a terminal and an electric energy meter, and the method comprises the steps: obtaining a basic temperature value through measuring the voltage difference of a PN junction of a voltage difference triode based on a dynamic matching method; a pre-stored segmentation error compensation model is called to correct the basic temperature value, and a final temperature value is output; through collaborative design of a dynamic matching method and a segmented error compensation model, the problem of full-temperature-range measurement error caused by dynamic change of saturation current IS in operation is solved. Compared with a mode of correcting the saturation current IS initial value only through factory single-point fine adjustment in the prior art, the embodiment of the invention can effectively cope with the dynamic fluctuation of the saturation current IS parameter in the operation process, thereby realizing more stable temperature measurement.

This application provides an ESD protection structure for nanoscale process technology, comprising an RC detection structure and a protective NPN transistor. A trigger source based on the P+ diffusion region in the protective NPN transistor is connected to the RC detection structure. Once static electricity is generated, the detection current generated by the RC detection circuit enters the protective NPN transistor through the trigger source, generating a current flowing from the trigger source to the P- epitaxial layer. When the voltage generated by the P- epitaxial resistor and this current reaches the NPN transistor's turn-on voltage, the protective NPN transistor conducts to discharge the ESD current. The protective NPN transistor in this application is triggered to conduct through the transistor's substrate. Because the protective NPN transistor lacks the lightly doped drain structure (LDD) produced by standard process technology, and the ESD current is discharged through the parasitic NPN transistor substrate rather than concentrated on the diffusion region channel surface, it can provide relatively high ESD protection capability with a relatively small layout area, making it more suitable for high-density chips and nanoscale process technology.

The present invention relates to a CAN bus intrusion prevention circuit and method. The circuit includes a microprocessor (MCU), NPN transistors Q1, Q2, and Q3, coupling capacitors C1 and C2, current-limiting resistors R3, R4, R5, R6, R7, R8, R9, and R10, a 3.5V voltage-stabilizing diode D2, a 2.5V voltage-stabilizing diode D3, and a 1.5V voltage-stabilizing diode D4. The microprocessor MCU has a board-level communication interface O1 for receiving instructions to activate an intrusion prevention function, and a PWM pin for outputting a PWM signal. The PWM signal has a frequency that is ten times or more greater than the baud rate of the connected CAN bus, a high level of not less than 3.3V, and a duty cycle of not less than 0.9. Based on the characteristics of the CAN link layer protocol, the present invention can immediately initiate intrusion prevention upon detecting abnormal CAN bus data, thereby actively shielding illegal or hijacked attacking devices and protecting bus security.

The invention discloses a programmable current-limiting regulation output circuit and a control method, which are used in the field of electronic measurement circuits. The circuit comprises a power supply end, a reference voltage input end, a digital-to-analog converter, a sampling resistor, a comparator, a first triode, a second triode, an output control transistor and a voltage output end. The base electrode of the first triode is connected to the output end of the digital-to-analog converter, the emitter electrode is connected to the power end, the collector electrode is connected to the first input end of the comparator, the second input end of the comparator is connected to the voltage output end through the sampling resistor, and the output end of the comparator is connected to the base electrode of the second triode. The collector of the second triode is connected to the reference voltage input end, the emitter is connected to the voltage output end, the gate of the output control transistor is connected to the reference voltage input end, the drain is connected to the power supply end, and the source is connected to the voltage output end.

The utility model discloses a surge current suppression circuit suitable for high-voltage input, which belongs to the technical field of power electronics and comprises an MOS (metal oxide semiconductor) tube, a triode, a first capacitor and a second capacitor. A collector electrode of the triode is connected to a power supply positive electrode line through a resistor, an emitter electrode of the triode is connected to a power supply negative electrode line, a base electrode of the triode is divided into two paths, one path of the base electrode of the triode is connected with a source electrode of the MOS tube through a sixth resistor, and the other path of the base electrode of the triode is connected with a drain electrode of the MOS tube through a fourth resistor; one end of the first capacitor is connected between the second resistor and the first resistor, and the other end of the first capacitor is connected to the power supply cathode line; and the MOS tube is connected to a power supply cathode line. Compared with the prior art, the circuit does not need an auxiliary power supply and an operational amplifier circuit, so that the cost and the arrangement space are saved, the related requirements of GJB181A-2003 on the input current are met, and the power supply and front-end equipment can be protected.

The invention discloses a transimpedance amplifier insensitive to high light intensity, which comprises an input signal amplification structure and a double-end output structure which are connected with each other, the double-end output structure is also connected with a current bias structure, and the current bias structure is used for providing stable bias current irrelevant to a triode amplification coefficient for the input signal amplification structure. And under the condition that no signal is input, the output reference voltage is equal to the output voltage, and the input signal amplification structure is used for providing a corresponding amplification factor for a wide-range input signal. According to the transimpedance amplifier insensitive to high light intensity, under the condition that the light intensity is large, the triodes enter a saturation region, the output voltage is divided by the resistors and clamped at the lowest output voltage, and the output voltage is prevented from being lower than the common-mode input range of a post-amplifier; when the input optical signal disappears, that is, the output signal is strained to be a high level, the level jump speed is improved through the rapid discharge path.

The utility model relates to an over-temperature and over-voltage protection circuit which comprises a power supply circuit, a lighting circuit, an operational amplifier power supply circuit, a voltage detection circuit, a temperature detection circuit and an LED power supply circuit. The voltage detection circuit is composed of a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a first operational amplifier, a first MOS tube, a second triode and a second voltage stabilizing diode. The temperature detection circuit is composed of a tenth resistor, an eleventh resistor, a twelfth resistor, a second operational amplifier and a thermistor. Whether the input voltage exceeds the normal working voltage or not is judged through the voltage detection circuit, whether the current temperature exceeds the rated temperature of a device or not is judged through the temperature detection circuit, whether the lamp needs to be turned on or turned off or not is judged through the two operational amplifiers, and then a signal is output to control the light-emitting diode to be turned on or turned off.

The invention belongs to the technical field of integrated circuits, and particularly relates to an ESD electrostatic protection structure suitable for a low-voltage circuit. The ESD electrostatic protection structure adopts a mode that an NPN triode with a floating layered base region structure is used for assisting in triggering an SCR to discharge forward ESD current and a PN junction diode to discharge negative ESD current; the NPN triode with the floating layered base region structure comprises an N + active region I, a P-type ESD injection region, a P well I and an N + active region II, the first N + active region and the second N + active region are a collector region and an emitter region of the NPN triode respectively, the base region is composed of a P-type ESD injection region and a first P well, the P-type ESD injection region is located below the first N + active region, and the base region is of a floating layered structure. The ESD protection structure is provided with a bidirectional rapid ESD current discharge path to the ground, so that the SCR trigger voltage is reduced.

The application relates to an actively detected power state detection system and method, which comprises at least two groups of symmetrically arranged triode modules, an optical coupling isolation module and a MOS tube driving module; the MOS tube driving module is connected with a signal input end through double channels and is used for receiving active monitoring electric signals; when the double channels of each MOS tube driving module simultaneously receive the same active monitoring electric signals, the MOS tube driving module converts the active monitoring electric signals into detection pulses and sends the detection pulses to the optical coupling isolation module to conduct short-time detection on the power state; the optical coupling isolation module is used for isolating the MOS tube driving module from the measured power supply and transmitting the detection pulses from the MOS tube driving module; only one group of optical coupling isolation modules can be turned on at the same time in the system; the triode module is connected with a signal output end through double channels and is used for acquiring and outputting the power state to be measured. Compared with the prior art, the application can actively control the power state detection and conduct self-detection.

The utility model discloses a button signal identification circuit based on triode control, which relates to the field of button signal identification, and is characterized in that each button is associated with a voltage dividing unit through a corresponding triode, and the triode controls the corresponding voltage dividing unit to work according to the state of the button, so that when the button is pressed down, the voltage dividing unit can be adjusted according to the state of the button. The corresponding voltage dividing unit can generate and output a voltage signal corresponding to the key; that is to say, the key does not directly participate in the voltage division loop, but indirectly influences the voltage output in the circuit by controlling the conduction state of the triode, so that the state identification of the key does not depend on the contact impedance between the golden finger and the conductive rubber any more, and the condition that the key cannot be damaged even under the condition that the fluctuation of the contact impedance is large is ensured. And the circuit can accurately identify the key state without generating false triggering.

The present application discloses an over-temperature protection circuit and method, which includes a reference current module, a temperature detection module, and a current comparison module; the output end of the reference current module is connected to the input end of the current comparison module; the output end of the temperature detection module is connected to the other input end of the current comparison module. The present application uses the current comparison module to compare the received positive temperature coefficient current and the reference current to obtain a comparison result, and adjusts the output voltage VOUT of the over-temperature protection circuit according to the comparison result. There is no need to perform temperature detection through the base-emitter voltage of the transistor. Therefore, the over-temperature protection circuit does not have the inherent disadvantages of temperature detection (that is, the detection accuracy will be affected by the manufacturing process deviation), thereby improving the detection accuracy of the over-temperature protection circuit.

The invention discloses a starting circuit of a wide-voltage-domain and high-precision analog temperature sensor. The starting circuit comprises a temperature sensor main body structure, a starting module and an external load. The main body structure of the temperature sensor is composed of triodes, generates a voltage in direct proportion to the temperature and provides the voltage to an external load. The starting module is composed of a capacitor, so that the circuit is separated from a zero degeneracy point state, and extra current is not consumed after the circuit is started; the two ends of the external load apply PTAT voltage to the temperature sensor, and the PTAT voltage is converted into PTAT current. The circuit is low in power consumption, current passes through the two ends of the capacitor only in the starting process, the current on the capacitor is zero after normal work, and normal starting work of the circuit can be guaranteed under lower working current.

The present invention discloses a low self-heating constant temperature difference control circuit and control method for compensating for process errors in a thermal flowmeter. The circuit comprises a heating resistor, an ambient temperature resistor, a control resistor, a starting resistor, a first potentiometer, a second potentiometer, first to sixth resistors, a transistor, a first operational amplifier, a second operational amplifier, a third operational amplifier, and a power supply. The third operational amplifier uses negative feedback to control a Wheatstone bridge circuit composed mainly of the first resistor, the second resistor, the heating resistor, and the ambient temperature resistor to maintain a balanced state. The third to sixth resistors reduce the heating power of the ambient temperature resistor through voltage division. The resistance values ​​of the first and second potentiometers are adjustable, thereby compensating for errors in the resistance and temperature coefficients of the heating and ambient temperature resistors that occur during processing. The present invention can more accurately control the overheat temperature of the heating resistor to be constant, thereby improving measurement accuracy.

The invention discloses a temperature compensation band-gap reference circuit, relates to the technical field of analog integrated circuits, and aims to solve the problem that a traditional band-gap reference circuit is large in temperature drift due to the fact that the traditional band-gap reference circuit is affected by a VBE nonlinear high-order term within a wide temperature range. The circuit comprises a bias circuit module, a starting circuit module, a temperature compensation circuit module and a band gap core circuit module. Wherein the bias circuit module provides temperature-insensitive bias current for the system through the current mirror network; the starting circuit module realizes power-on quick starting, normal working zero static power consumption and power-down quick reset by utilizing the synergistic effect of a capacitor and a switch; according to the band-gap core circuit module and the temperature compensation circuit module, nonlinear voltage characteristics are extracted through triode emitter voltage difference, reverse compensation current is introduced through a feedback loop, and a high-order temperature drift item in reference voltage is accurately offset. In addition, the circuit adopts a composite resistor structure in which polycrystalline silicon and diffusion resistors are connected in series, so that process deviation and resistance temperature drift are further inhibited.

The utility model particularly relates to a self-recovery under-voltage protection circuit, which comprises a first VCC end and an OUT end, the VCC end is connected with the OUT end through a field effect transistor Q4, the base electrode of the field effect transistor Q4 is connected with an OP end, the OP end is connected with a control circuit, the circuit forms a control framework through a first triode Q1, a second triode Q2 and a third triode Q3, and the control framework is cooperatively configured with the field effect transistor Q4, so that the self-recovery under-voltage protection circuit is realized. The under-voltage protection function can be achieved only through five core components, the number of components is reduced by more than 40% compared with a traditional discrete component scheme, the circuit complexity and the material cost are remarkably reduced, and the structure is simplified and the cost is optimized.

The utility model belongs to the technical field of relays, and discloses a low power consumption relay drive circuit, which comprises a power supply port 12VS and an MCU control port RLYAC-OUTL, a relay RLY1 comprises a pin 1, a pin 2, a pin 3 and a pin 4, the pin 3 is connected with a port INVVOUT, the pin 4 is connected with a port INV-L, and the pin 1 and the pin 2 correspond to a coil and are used for controlling opening and closing between the pin 3 and the pin 4. The low-power-consumption relay has the advantages that low power consumption can be achieved through the triodes, the resistors and the capacitors, the power consumption reduction effect on a product with a plurality of relays working together is obvious, the low-power-consumption relay has the advantages of being rapid in action, high in reliability, low in cost, flexible in application and the like, and low power consumption can be achieved by matching the capacitors according to different internal parameters of the relays.

The invention relates to a fault alarm sensor with an adjustable fault current threshold and a panel type fault indicator. The fault alarm sensor adopts a triode as an alarm switch element, the output of a current transformer is connected to an alarm signal circuit and is simultaneously used as a working power supply and a detection signal, and the base electrode of the triode is provided with a pull-down resistor branch capable of passing through the resistance value of a dial switch, so that the dial switch can be adjusted to set and adjust a fault current threshold. Light emitted by a light emitting diode in the alarm signal circuit is an alarm signal. The panel type fault indicator is provided with a panel host and the sensors, and the panel host can be used for setting and adjusting the short-circuit fault minimum discrimination time, the grounding fault minimum discrimination time and the fault reset time. The panel type fault indicator realizes electrical isolation of the sensor and the host, is simple in structure and convenient to use, and can be mainly used for current fault monitoring of power cables and related equipment.

The application discloses a high-voltage secondary hysteresis electrostatic protection device and a preparation method thereof, and relates to the technical field of semiconductor devices. The high-voltage secondary hysteresis electrostatic protection device comprises at least five P wells and N wells arranged transversely and alternately, and the number of the P wells is one more than that of the N wells; each N well is provided with an alternating structure, the alternating structure comprises at least one first P+ injection area and at least one first N+ injection area arranged longitudinally and alternately; a P well between two adjacent N wells is provided with a second N+ injection area; each alternating structure is connected as a device anode, and the second N+ injection area is connected as a device cathode; the N well, the corresponding first N+ injection area, the adjacent middle P well and the corresponding second N+ area form an NPN triode structure; and the N well, the corresponding first P+ injection area, the adjacent middle P well and the corresponding second N+ area form an SCR path.

The invention belongs to the technical field of semiconductors, and relates to a GaN HEMT device with an adjustable threshold voltage structure. A PNP triode structure is introduced into a grid electrode of the device, an N-end extraction electrode serves as a threshold value control electrode, and a P-end extraction electrode on the topmost layer serves as the grid electrode. The gate voltage of the whole device must exceed the threshold value control electrode voltage and the opening voltage of the top PN junction, so that the channel of the device can be opened. Meanwhile, due to hole injection brought by the BJT structure, the structure of the invention also has a conductivity modulation effect, the transconductance of the device can be improved, and the grid control capability can be enhanced. The device is provided with the externally given threshold control electrode, so that the device can realize adjustable threshold voltage, and different threshold voltages can be realized by applying different voltages through the threshold control electrode.

The utility model relates to the field of switching circuits, in particular to a PMOS (P-channel Metal Oxide Semiconductor) switching circuit, which is characterized in that a source electrode of a PMOS tube Q1 is connected with an input voltage end Vi n, and a drain electrode is connected with a load output end Vout; a base electrode of the triode Q2 receives the switching signal through a control signal end PWR, and an emitting electrode of the triode Q2 is grounded; the first divider resistor R1 is connected between the grid electrode of the PMOS tube Q1 and an input voltage end Vi n; the second divider resistor R2 is connected between the grid electrode of the PMOS tube Q1 and the collector electrode of the triode Q2; the first capacitor C1 is connected between the grid electrode and the source electrode of the PMOS tube Q1; the resistance value ratio of the first divider resistor R1 to the second divider resistor R2 is 1: 3 to 1: 5, the capacitance value of the first capacitor C1 is 10 nF to 100 nF, and the load capacitance C2 does not exceed 470 [mu] F. The voltage division ratio of R1 / R2 is matched with the capacitor C1, so that the conduction time of the PMOS is prolonged, the instantaneous charging current peak value of the load capacitor C2 is remarkably reduced, voltage drop is avoided, and the stability of the system is guaranteed.

The utility model relates to the technical field of input signal control, and discloses a control circuit for an external input signal of an internal connection system, which comprises a resistor R228, a capacitor C241, a triode Q13, a clamping diode D39, a relay K2 and an interface J9. According to the invention, accurate and stable control of external input signals is realized, damage of excessive current to subsequent elements is avoided based on current limiting of control signals, circuit safety is guaranteed, voltage fluctuation is reduced based on voltage stabilization, signal transmission is more stable, voltage abnormity is prevented based on clamping, and the relay K2 is protected. High and low levels are generated to control the switching action of the relay, three switching channels are output to the interface, a control signal is accurately transmitted to external equipment, and the interface is connected with a plurality of signals to adapt to the requirements of different external equipment, so that the problems of poor stability and low precision of a traditional control circuit are solved; and the requirements of external equipment with relatively high signal response requirements are met.

The invention relates to a level shift circuit and a level shift device. The level shift circuit comprises a signal output module and a control module, the signal output module comprises a triode, the high-voltage end of the triode is used for receiving a power supply voltage, the low-voltage end of the triode is used for outputting a shift signal, and the base electrode of the triode is used for receiving a first control signal; the control module comprises a junction field effect transistor and an insulated gate field effect transistor, the drain electrode of the junction field effect transistor is connected with the base electrode of the triode and used for outputting a first control signal, the grid electrode of the junction field effect transistor is grounded, and the source electrode of the junction field effect transistor is connected with the drain electrode of the insulated gate field effect transistor; the grid electrode of the insulated gate field effect transistor is used for receiving a second control signal, and the source electrode of the insulated gate field effect transistor is grounded. According to the level shift circuit, the power consumption of the level shift circuit during working can be reduced.

The application discloses a floating ground current output circuit and method for replacing a direct current voltage Hall sensor, and the floating ground current output circuit comprises an operational amplifier, a resistor and a triode; the floating ground current output circuit adopts the operational amplifier virtual short and operational amplifier virtual break principles, converts bidirectional direct current voltage into bidirectional direct current output through the resistor, and expands the current output through the triode. The floating ground current output circuit provided by the application can be combined with a conventional electromagnetic isolation sensor, a photoelectric isolation sensor and a modulation demodulation sensor circuit, can replace the floating ground current output mode of the direct current voltage Hall sensor, can convert bidirectional direct current voltage into bidirectional direct current output, and can control the detection precision within a 0.1% error range. Compared with the floating ground current conversion circuit of the direct current voltage Hall sensor itself, the floating ground current output circuit has the advantages of low temperature drift, high precision and small power consumption.

The utility model provides an overvoltage protection circuit. The circuit comprises a voltage stabilizing tube circuit, a triode sub-circuit and a field effect tube circuit. The first input end of the field effect transistor circuit, the input end of the voltage stabilizing transistor circuit and the first input end of the triode sub-circuit are respectively connected with the output end of the power supply; the output end of the field effect transistor circuit is connected with the input end of the electronic equipment; the first output end of the voltage stabilizing tube sub-circuit is connected with the second input end of the triode sub-circuit; the output end of the triode sub-circuit is connected with the second input end of the field effect transistor circuit; the second output end of the voltage stabilizing tube circuit is connected with the ground. Through cooperation of the circuits, the power supply and the electronic equipment can be conducted when the power supply voltage is smaller than the preset voltage, and the power supply and the electronic equipment can be cut off when the power supply voltage is larger than or equal to the preset voltage; meanwhile, selected electronic devices are low in cost, easy to obtain and convenient to process, so that the production cost of the whole circuit is low.

The application discloses an anti-single-particle-radiation LDMOS device structure and belongs to the technical field of semiconductor power devices. The device comprises a P-type substrate, an N-type buried layer, a P-type epitaxial layer, an N-type deep well, a P-type deep well, an STI shallow trench isolation oxide layer, a gate oxide layer, an HTO oxide layer, polycrystalline silicon, an N-type well region, a P-type well region, a P-type buried layer, an N-type drift region, a P-type body region, a source region N+ injection, a drain region N+ injection, a body region P+ injection, an isolation N+ injection and an isolation P+ injection. The single-drain region is changed into a double-drain region, the parasitic triode is a double-collector, plays a role of current sharing, can reduce a drain end electric field peak, suppresses a Kirk effect and thus improves the anti-single-particle-radiation capability of the device.

The invention discloses a low-cost modular multi-channel analog wake-up circuit device and method. The low-cost modular multi-channel analog wake-up circuit device comprises a voltage sampling circuit and a switch output driving circuit, and the voltage sampling circuit is connected with the switch output driving circuit. The vehicle-mounted system power management and communication integrated chip circuit has the advantages that by means of the voltage sampling circuit and the switch output driving circuit, analog quantity input is converted into digital quantity rising edge signals to wake up the vehicle-mounted system power management and communication integrated chip SBC, and the number of input acquisition circuits can be properly increased to N; the limitation of single input signal processing in the prior art is solved, and the stability, the safety and the efficient triggering of the signal are solved; the resistors, the capacitors, the triodes and the like used in the circuit design all belong to universal components, so that the use of high-cost components is reduced, the development cost is greatly reduced, and the requirements of most application scenes are met.

The invention belongs to the technical field of PWM controller circuits, and particularly relates to a current mode PWM controller. Comprising an oscillator module, an FB detection module, an overload protection module, a hiccup control module and a PWM comparator CMP1, the FB detection module inputs a feedback voltage signal FB through an FB port so as to control the conduction and cut-off of a triode Q1, and outputs three paths of voltage signals to the overload protection module, the hiccup control module and the PWM comparator CMP1; the CS detection module is used for inputting an inductive current signal of an off-chip loop through a CS port, converting the inductive current signal into a voltage signal CS through an off-chip sampling resistor Rd, sending the voltage signal CS into the chip, processing the voltage signal CS through a leading edge blanking circuit, and outputting a signal P876G; the peak current detection module is used for superposing the voltage signal CS and a triangular wave signal N4G output by the oscillator module, then carrying out leading edge blanking switching and then inputting the voltage signal CS and the triangular wave signal N4G to a PWM comparator CMP1; according to the invention, rapid load response can be realized through peak current detection and voltage / current double feedback.