Concentric-ring sprayer structure for material vapor phase epitaxy

A technology of concentric rings and vapor phase epitaxy, which is applied in the direction of chemically reactive gases, single crystal growth, chemical instruments and methods, etc., can solve the problems of low production efficiency, uneven mixing of precursors, small coverage area, etc., and achieve improved Production efficiency, the effect of improving the quality of grown crystals

Inactive Publication Date: 2013-04-03
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the size of the substrate becomes larger or the number of substrates increases, that is, when the substrate is deposited in a large area, due to the structural limitation of the circular nozzle, the mixing of the precursors is not uniform enough, or the coverage area is too small, so it is not suitable for large-size substrates or multiple substrates. For the simultaneous growth of wafer substrates, the current nozzle structure on semiconductor growth equipment has serious limitations when used on large-scale / large-deposition areas. Poor uniformity and low production efficiency when depositing and growing crystals, so it is necessary to improve the nozzle structure for hydride vapor phase epitaxy (HVPE)

Method used

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  • Concentric-ring sprayer structure for material vapor phase epitaxy
  • Concentric-ring sprayer structure for material vapor phase epitaxy
  • Concentric-ring sprayer structure for material vapor phase epitaxy

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Embodiment 1

[0028] Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the material of the nozzle needs to be high-strength, does not have a chemical reaction with the reaction gas, and has a low thermal expansion coefficient, such as quartz to make the nozzle.

[0029] There are at least three pipes in the sprinkler head, which are metal source, nitrogen and ammonia pipes. When different gases pass through the concentric ring structure nozzle, they are separated. The baffle-type air outlet at the outlet makes the ejected gas evenly distributed, which is conducive to uniform mixing and the formation of a more uniform flow field in the reaction area. The independent gas inlet pipeline is convenient for monitoring and adjusting the flow rate and flow rate of each pipeline gas, which is beneficial to control the process and improve the crystal quality and growth uniformity.

[0030] The number of concentr...

Embodiment 2

[0033] Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the nozzle material needs to be high-strength, does not chemically react with the reactive gas, and has a low thermal expansion coefficient, such as quartz for the nozzle.

[0034]The nozzle adopts an independent pipeline design, which can independently control and control the different gases that pass through without interfering with each other. The design of concentric rings and independent air intake pipes can facilitate process debugging for various metal sources or gases that are introduced. The isolation structure of concentric rings isolates different gases, and the baffle-type air outlet at the outlet makes the ejected gas evenly distributed, which is conducive to uniform mixing and the formation of a more uniform flow field in the reaction area. The independent gas inlet pipeline is convenient for adjusting the flow rate and...

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Abstract

The invention discloses a concentric-ring sprayer structure for material vapor phase epitaxy, which solves the problem that the large-area deposition region provides a uniform flow field of a precursor gas mixture in a large-substrate or multi-substrate crystal growth process. The sprayer structure comprises more than one independent air inlet pipeline, wherein each air inlet pipeline is provided with a controller for monitoring and regulating inlet gas flow speed and flow rate; the bottom of the sprayer is provided with an air outlet baffle; more than one concentric ring is arranged in the sprayer; independent cavities are formed among the concentric rings and are mutually separated; the top end of each concentric ring is connected with one independent air inlet pipeline; and the air outlet baffle at the bottom end of each concentric ring is provided with one or more air outlets. The air sources are mutually separated and independently controlled; and the multi-sprayer integrated use mode obviously improves the quality of the large-area deposited grown crystal, and greatly enhances the production efficiency.

Description

technical field [0001] The invention relates to a device for chemical vapor deposition (CVD) on a substrate, in particular to a nozzle design for large-area uniform deposition of hydride vapor phase epitaxy (HVPE). Background technique [0002] As the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high-quality III-nitride films takes on greater importance. Hydride vapor phase epitaxy (HVPE) technology has the characteristics of fast growth rate and low production cost, and is very suitable for the growth of group III-nitride semiconductor materials, such as the mass production of gallium nitride (GaN) wafers. To increase throughput and throughput, it is desirable to mix the precursors uniformly over larger substrates and / or multiple substrates, ie over larger area deposition areas. These factors are very important as it directly affects the cost of production and the competitiveness of the product in the market. [0003] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14
Inventor 张俊业刘鹏毕绿燕赵红军袁志鹏张国义童玉珍
Owner SINO NITRIDE SEMICON
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