Perovskite solar cell with interface modification layers and preparation method of perovskite solar cell

A technology for interface modification layers and solar cells, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor long-term stability of perovskite solar cells, improve photoelectric conversion efficiency, inhibit ion migration, and optimize crystal structure. Effect

Active Publication Date: 2018-07-06
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Abstract
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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a perovskite solar cell with an interface modification layer and a preparation method thereof, aiming at the problem of poor long-term stability of the perovskite solar cell produced by the existing gas-phase assisted solution method. An interface modification layer is added between the mineral active layer and the transport layer to passivate the defects on the transport layer or the surface of the perovskite active layer, optimize the crystallization process of the perovskite, and inhibit the perovskite active layer to a certain extent. The ion migration phenomenon in the cell, thereby improving the long-term stability of the perovskite battery

Method used

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  • Perovskite solar cell with interface modification layers and preparation method of perovskite solar cell
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  • Perovskite solar cell with interface modification layers and preparation method of perovskite solar cell

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preparation example Construction

[0055] The present invention also discloses a method for preparing a perovskite solar cell with an interface modification layer as described above, comprising the following steps:

[0056] Step S11 , preparing a first transmission layer on the substrate of the transparent conductive substrate.

[0057] Step S12, preparing a first interface modification layer on the substrate deposited with the first transport layer by a solution method or a gas phase method by any one of spin coating, blade coating, slit continuous coating, spray coating or printing.

[0058] Step S13, preparing a perovskite precursor layer on the substrate deposited with the first interface modification layer by a solution method or a gas phase method by any one of spin coating, blade coating, slit continuous coating, spray coating or printing, The perovskite precursor layer contains one or more metal halides BX 2 .

[0059] Step S14 , preparing a perovskite reaction layer on the substrate for preparing the...

example 1

[0086] Example 1, a method for preparing a perovskite solar cell, please refer to the attached Figure 5 The schematic diagram of the internal structure of the perovskite solar cell shown includes the following steps:

[0087] (1) Clean a 5×5cm ITO glass plate with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use N 2 After drying, it was treated with UV O-zone for 10 minutes;

[0088] (2) Preparation of NiO x The thin film acts as a hole transport layer;

[0089] (3) 10nm 2-naphthalenethiol was deposited on the hole transport layer by slot coating method as the first interface modification layer, and 2-naphthalenethiol was dissolved in ethanol at a concentration of 0.5mol / L; figure 2 It is the chemical structure diagram of 2-naphthalene thiol;

[0090] (4) Preparation of doped or modified metal halide precursor: 461mg of PbI 2 (1mmol), dissolved in 1mL of DMF solution, add 70.9uL of anhydrous DMSO, heat and stir at 60°C for 2h, mix comple...

Embodiment 2

[0095] Embodiment 2, comprises the following steps:

[0096] (1) Clean the FTO glass plate sequentially with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then use N 2 After drying, it was treated with UV O-zone for 10 minutes;

[0097] (2) Evaporate 10nm tungsten oxide film as the hole transport layer;

[0098] (3) Evaporate 20nm 5,7,12,14-pentacenetetraone on the hole transport layer as the first interface modification layer, and the evaporation temperature is 375°C; image 3 It is the chemical structure diagram of 5,7,12,14-pentacenetetraone;

[0099] (4) Preparation of doped or modified metal halide precursor: 461mg of PbI 2 (1mmol), dissolved in 1mL of DMF solution, add 70.9uL of anhydrous DMSO, heat and stir at 60°C for 2h, mix completely and set aside;

[0100] (5) Preparation of doped PbI by slot coating using the prepared precursor solution 2 film;

[0101] (6) Place the prepared metal halide film in the film forming chamber, and use a...

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Abstract

The invention relates to a perovskite solar cell with interface modification layers. The cross-sectional structure of the perovskite solar cell includes a transparent conductive substrate, a first transmission layer, a perovskite active layer, a second transmission layer and a back electrode; at least one first interface modification layer is disposed between the perovskite active layer and the first transmission layer; and no or at least one second interface modification layer is disposed between the perovskite active layer and the second transmission layer. The invention also discloses a preparation method of the perovskite solar cell. According to the method, the interface modification layers are additionally arranged between the perovskite active layer and transmission layers of a perovskite solar cell, so that the perovskite solar cell with the interface modification layers can be prepared; the surfaces of the transmission layers are passivated; the crystal structure of the perovskite is optimized; ion migration in the perovskite active layer is suppressed to a certain extent; and therefore, the photoelectric conversion efficiency and long-term stability of the perovskite cellare improved.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, in particular to a perovskite solar cell with an interface modification layer and a preparation method thereof. Background technique [0002] A solar cell is a photoelectric conversion device that uses the photovoltaic effect of semiconductors to convert solar energy into electrical energy. So far, solar power has become the most important renewable energy besides hydropower and wind power. The semiconductors currently used for commercialization include monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, copper indium gallium selenide, etc., but most of them consume a lot of energy and cost. [0003] In recent years, a perovskite solar cell that uses organometallic halides as the light absorbing layer has received much attention. Perovskite as ABX 3 type of cubo-octahedral structure, such as figure 1 shown. The thin-film solar cells made o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K30/353Y02E10/549Y02P70/50
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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