Antimonide distributed feedback laser and manufacturing method thereof

Abstract

The invention provides a manufacturing method of an antimonide distributed feedback laser. The manufacturing method comprises the following steps: S1, forming an N-type first InAs buffer layer on a substrate; s2, forming an N-type lower InAsSb limiting layer on the N-type first InAs buffer layer; s3, forming an N type lower InAlAsSb waveguide layer on the N type lower InAsSb limiting layer; s4, an InGaAs / InAlGaAsSb quantum well layer is formed on the N type lower InAlAsSb waveguide layer; s5, a P type upper InAlAsSb waveguide layer is formed on the InGaAs / InAlGaAsSb quantum well layer; s6, forming a P type upper InAsSb limiting layer on the P type upper InAlAsSb waveguide layer; s7, forming a second P-type InAs buffer layer on the upper P-type InAsSb limiting layer; s8, forming a P-type corrosion barrier layer on the P-type second InAs buffer layer; s9, forming a P-type grating layer on the P-type corrosion barrier layer; s10, forming a P-type barrier layer on the P-type grating layer; s11, forming a P-type ohmic contact layer on the P-type barrier layer; wherein the steps from S1 to S11 are executed by adopting an MOCVD (Metal Organic Chemical Vapor Deposition) method. The invention also provides an antimonide distributed feedback laser manufactured by using the manufacturing method.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of optoelectronics and semiconductor technology, and particularly relates to a type of antimony chalcogenide distributed feedback laser and its manufacturing method. BACKGROUND

[0002] The 2-5 μm infrared band has two atmospheric windows, 2-2.5 μm band and 3.5-5 μm band. The laser in this band has low scattering and absorption, and the laser working in this band has a very wide range of applications in medical instruments, space optical communication, infrared photoelectric countermeasure, gas detection and other civil and military fields.

[0003] In the field of gas detection, the characteristic absorption spectrum of many gas molecules is in this band, and the absorption characteristics of the gas molecules in this band can be used to realize high-sensitivity, fast, non-contact gas detection and atmospheric pollutant monitoring, which has very important industrial application value. The bandgap of antimony chalcogenide is just covering this band, so the antimony chalcogenide laser has become the most popular research object in this band.

[0004] However, the conventional infrared antimony chalcogenide semiconductor laser has low photoelectric conversion efficiency in practical application, and has large threshold current, low maximum output power and short continuous stable working time at room temperature. Therefore, it is urgent to provide an infrared antimony chalcogenide semiconductor laser to solve these technical problems. SUMMARY

[0005] In order to solve the above technical problems existing in the prior art, according to the embodiments of the present application, a type of antimony chalcogenide distributed feedback laser with high photoelectric conversion efficiency, small threshold current, high maximum output power and long continuous stable working time at room temperature and its manufacturing method are provided.

[0006] According to an aspect of the embodiment of the present application, a Sb-distributed feedback laser and a manufacturing method thereof are provided, which comprises the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming a P-type upper InAlAsSb waveguide layer on the InGaAs / InAlGaAsSb quantum well layer; S6, forming a P-type upper InAsSb confinement layer on the P-type upper InAlAsSb waveguide layer; S7, forming a P-type second InAs buffer layer on the P-type upper InAsSb confinement layer; S8, forming a P-type etching stop layer on the P-type second InAs buffer layer; S9, forming a P-type grating layer on the P-type etching stop layer; S10, forming a P-type barrier layer on the P-type grating layer; S11, forming a P-type ohmic contact layer on the P-type barrier layer; wherein the steps S1-S11 are performed by using a MOCVD method.

[0007] In one example of the manufacturing method provided in the above aspect, in the step S2, the material of the N-type lower InAsSb confinement layer is specifically InAs 1-y Sb y , wherein 0.9≤y≤0.97.

[0008] In one example of the manufacturing method provided in the above aspect, in the step S3, the material of the N-type lower InAlAsSb waveguide layer is specifically In x Al 1-x As 1-y Sb y , wherein 0.7≤x≤0.85, 0.96≤y≤0.98.

[0009] In one example of the manufacturing method provided in the above aspect, in the step S4, the InGaAs / InAlGaAsSb quantum well layer comprises a plurality of periods of In x Ga 1-x As / In x Al y Ga 1-x-y As 1-z Sb z , wherein in the In x Ga 1-x As, 0.2≤x≤0.4; in the In x Al y Ga 1-x-y As 1-z Sbz In particular, 0.2≤x≤0.4, 0≤y≤0.5, 0.74≤z≤0.98.

[0010] In one example of the fabrication method provided in the above aspect, in step S5, the material of the P-type upper InAlAsSb waveguide layer is specifically In x Al 1-x As 1-y Sb y In particular, 0.7≤x≤0.85, 0.96≤y≤0.98.

[0011] In one example of the fabrication method provided in the above aspect, in step S6, the material of the P-type upper InAsSb confinement layer is specifically InAs 1-y Sb y In particular, 0.9≤y≤0.97.

[0012] In one example of the fabrication method provided in the above aspect, in step S8, the specific material of the P-type etching stop layer is InAs 1-y Sb y In particular, y=0.78.

[0013] In one example of the fabrication method provided in the above aspect, in step S9, the specific material of the P-type grating layer is In x Ga 1-x As 1-y Sb y In particular, x=0.75, 0.95≤y≤0.98.

[0014] In one example of the fabrication method provided in the above aspect, in step S10, the P-type barrier layer includes a P-type In x Ga 1-x As 1-y Sb y gradient layer and a P-type In x Ga 1-x As 1-y Sb y transition layer, which are sequentially stacked on the P-type grating layer, wherein in the P-type In x Ga 1-x As 1-y Sb y gradient layer, x=0.75, y=0.95; and in the P-type In x Ga 1-x As 1-y Sb y transition layer, x=0.8, y=0.95.

[0015] According to another aspect of the embodiments of the present application, the antimony chalcogenide distributed feedback laser is formed by the above-mentioned manufacturing method.

[0016] Beneficial effects: the infrared antimony chalcogenide semiconductor laser according to the embodiments of the present application has high photoelectric conversion efficiency in practical application, and has small threshold current, high maximum output power and long continuous stable working time at normal temperature. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above and other aspects, features and advantages of the embodiments of the present application will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 is a structural schematic diagram of the antimony chalcogenide distributed feedback laser according to the embodiments of the present application;

[0019] Figure 2 is a performance test diagram of the antimony chalcogenide distributed feedback laser formed by the manufacturing method of the antimony chalcogenide distributed feedback laser according to the embodiments of the present application;

[0020] Figure 3 is a curve diagram of the photoelectric conversion efficiency and output power of the antimony chalcogenide distributed feedback laser according to the embodiments one and two of the present application;

[0021] Figure 4 is a life curve diagram of the antimony chalcogenide distributed feedback laser according to the embodiments one and two of the present application. DETAILED DESCRIPTION

[0022] Hereinafter, specific embodiments of the present application will be described in detail with reference to the accompanying drawings. However, the present application can be implemented in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that the present application will be thorough and complete, and will fully convey the scope of the application to those skilled in the art. The present application will be described in detail with reference to the drawings, wherein like reference numerals refer to like elements throughout.

[0023] As used herein, the terms "comprises," "comprising," "includes," "including," "has," "having," "contains," "containing," or variations thereof, are intended to mean "including, but not limited to." The terms "based on" and "according to" are meant to mean "based, at least in part, on" or "according, at least in part, to." The terms "embodiment," "one embodiment," "an embodiment," "one example," and "an example" mean "at least one embodiment." The terms "another embodiment," "another example," "yet another example," "a further example," and the like mean "at least one other embodiment." The terms "first," "second," and the like can refer to different or identical objects. Other definitions can be found throughout this disclosure, either explicitly stated or implied by context. Such terms are not necessarily limited to the specific recitations of which they are a part.

[0024] It should also be noted that, in the drawings, the shapes and / or the processing steps closely related to the solutions according to the present application are shown, and other details not closely related to the solutions according to the present application are omitted.

[0025] Figure 1 is a structural schematic diagram of a Sb-doped distributed feedback laser according to an embodiment of the present application. In combination with Figure 1 A method for manufacturing a Sb-doped distributed feedback laser according to an embodiment of the present application is described in detail.

[0026] Referring to Figure 1 The method for manufacturing a Sb-doped distributed feedback laser according to an embodiment of the present application includes steps S1-S11. In this embodiment, steps S1-S11 are performed by using a MOCVD (Metal Organic Chemical Vapor Deposition) method. That is, steps S1-S11 are performed by a MOCVD device.

[0027] Specifically, in step S1, an N-type first InAs buffer layer 110 is formed on a substrate 100. The substrate 100 is an InAs substrate, but the present application is not limited thereto.

[0028] The method for performing step S1 in the MOCVD device specifically includes: first, the reaction chamber pressure of the MOCVD device is reduced to 50 mbar, the temperature is raised to 300-380°C, the arsine gas is continuously passed, the temperature is continuously raised to 400-600°C, and the surface of the substrate 100 is subjected to deoxidation treatment; second, the temperature is reduced to 450-500°C, the first InAs buffer layer 110 is grown, the thickness is 200-400 nm, the growth rate is 0.5 nm / s, and the Si doping concentration is 1E17-1E18.

[0029] In step S2, an N-type lower InAsSb confinement layer 120 is formed on the N-type first InAs buffer layer 110.

[0030] Specifically, in step S2, the reaction chamber temperature is maintained to continue growing the N-type lower InAsSb confinement layer 120, the growth material of which is InAs 1-y Sb y , the growth thickness is 500-1500 nm, the growth rate is 0.5 nm / s, the Sb component y value is 0.9-0.97 (the end value is also included therein), and the Si doping concentration is 1E17-1E18. In addition, it should be noted that in the end value range appearing below, the end value is also included therein.

[0031] In step S3, the N-type lower InAlAsSb waveguide layer 130 is formed on the N-type lower InAsSb confinement layer 120.

[0032] Specifically, in step S3, the N-type lower InAlAsSb waveguide layer 130 is grown in the reaction chamber, the growth material of which is In x Al 1-x As 1-y Sb y , the In component x value is 0.7-0.85, the Sb component y value is 0.96-0.98, and the growth thickness is 400-600 nm.

[0033] In step S4, the InGaAs / InAlGaAsSb quantum well layer 140 is formed on the N-type lower InAlAsSb waveguide layer 130.

[0034] Specifically, in step S4, the InGaAs / InAlGaAsSb quantum well layer 140 is grown at a reaction chamber temperature of 470-490°C for 5-10 periods, the production material of which is In x Ga 1-x As and In x Al y Ga 1-x-y As 1-z Sb z ; in the In x Ga 1-x As, the In component x value is 0.2-0.4, and the thickness is 100-200 nm; in the In x Al y Ga 1-x-y As 1-z Sb z , the In component x value is 0.2-0.4, the Al component y value is 0-0.5, the Ga component is 0.3-0.8, the Sb component z value is 0.74-0.98, and the thickness is 150-300 nm.

[0035] In step S5, a P-type upper InAlAsSb waveguide layer 150 is formed on the InGaAs / InAlGaAsSb quantum well layer 140.

[0036] Specifically, in step S5, a P-type upper InAlAsSb waveguide layer 150 is formed at a constant temperature (relative to step S4) by growing a growth material of In x Al 1-x As 1-y Sb y , wherein the In component x value is 0.7-0.85, and the Sb component y value is 0.96-0.98; and the growth thickness is 400-600 nm.

[0037] In step S6, a P-type upper InAsSb confinement layer 160 is formed on the P-type upper InAlAsSb waveguide layer 150.

[0038] Specifically, in step S6, a P-type upper InAsSb confinement layer 160 is formed at a temperature of 470-490°C by growing a growth material of InAs 1-y Sb y , wherein the Sb component y value is 0.9-0.97, and the growth thickness is 1200-1500 nm.

[0039] In step S7, a P-type second InAs buffer layer 170 is formed on the P-type upper InAsSb confinement layer 160.

[0040] Specifically, in step S7, a P-type second InAs buffer layer 170 is formed at a temperature of 470-490°C by growing a growth material of InAs, with a V / III ratio of 32, and a growth thickness of 500 nm.

[0041] In step S8, a P-type etching stop layer 180 is formed on the P-type second InAs buffer layer 170.

[0042] Specifically, in step S8, a P-type etching stop layer 180 is formed at a temperature of 470-490°C by growing a growth material of InAs 1-y Sb y , wherein the Sb component y value is 0.78, and the growth thickness is 800-100 nm.

[0043] In step S9, a P-type grating layer 190 is formed on the P-type etching stop layer 180.

[0044] Specifically, step S9 includes: first, growing a P-type In x Ga 1-x As 1-y Sb ya grating fabrication layer; wherein the value of x of In component is 0.75, the value of y of Sb component is 0.95-0.98, and the growth thickness is 1000-1200nm; secondly, etching the P-type In x Ga 1-x As 1-y Sb y grating fabrication layer to form a P-type grating layer 190 with a desired pattern. It is to be noted that after the P-type In x Ga 1-x As 1-y Sb y grating fabrication layer is grown, the wafer is taken out of the reaction chamber and then etched.

[0045] In step S10, a P-type barrier layer 200 is formed on the P-type grating layer 190.

[0046] Specifically, step S10 includes: first, adjusting the pressure of the reaction chamber to 50mbar, and continuously supplying arsine gas when the temperature reaches 280℃, and growing a P-type InAs protective layer (not shown) on the P-type grating layer 190 when the temperature rises to 470-490℃, so that the P-type InAs protective layer covers the P-type grating layer 190 in thickness; secondly, growing a P-type In x Ga 1-x As 1-y Sb y barrier gradual change layer (wherein the value of x of In component is 0.75, the value of y of Sb component is 0.95, the ratio of Ⅴ / Ⅲ is 3.8, and the thickness is 500-1000nm) and a P-type In x Ga 1-x As 1-y Sb y barrier transition layer (wherein the value of x of In component is 0.8, the value of y of Sb component is 0.95, the ratio of Ⅴ / Ⅲ is 3.6, and the thickness is 50-100nm) on the P-type InAs protective layer from bottom to top.

[0047] In step S11, a P-type ohmic contact layer 210 is formed on the P-type barrier layer 200.

[0048] Specifically, in step S11, the material InAs 1-y Sb y is used to grow the P-type ohmic contact layer 210, wherein the value of y of Sb component is 0.88, the ratio of Ⅴ / Ⅲ is 1.9, and the thickness is 10-100nm.

[0049] The antimony compound distributed feedback laser formed by the preferred embodiment of the method for forming an antimony compound distributed feedback laser according to the embodiment of the present application is compared with the performance of the antimony compound semiconductor laser formed by the prior method for forming an antimony compound semiconductor laser.

[0050] An embodiment of the method for fabricating the antimony-doped distributed feedback laser according to the embodiment of the present application (hereinafter referred to as Embodiment One) is as follows:

[0051] First, the pressure of the reaction chamber of the MOCVD equipment is reduced to 50 mbar, and the arsine gas is continuously supplied when the temperature is raised to 330 degrees, and the temperature is continuously raised to 590 degrees to perform the deoxidation treatment on the surface of the InAs substrate 110.

[0052] Second, the temperature is reduced to 480 degrees to grow the N-type first InAs buffer layer 110, the growth thickness is 200 nm, and the growth rate is 0.5 nm / s; the Si doping concentration is 1E17-1E18.

[0053] Third, the temperature is maintained to continuously grow the N-type lower InAs 0.04 Sb 0.96 The confinement layer 120 has a growth thickness of 800 nm.

[0054] Fourth, the N-type upper In 0.8 Al 0.2 As 0.02 Sb 0.98 Waveguide layer, growth thickness 400 nm.

[0055] Fifth, 10 cycles of In 0.2 Ga 0.8 As / In x0.3 Al 0.2 Ga 0.5 As 0.2 Sb 0.8 Quantum well layer 140, thickness 300 nm.

[0056] Sixth, the P-type upper In 0.8 Al 0.2 As 0.02 Sb 0.98 Waveguide layer 150, growth thickness 400 nm.

[0057] Seventh, the P-type upper InAs 0.04 Sb 0.96 Confinement layer 160, growth thickness 1300 nm.

[0058] Eighth, the P-type second InAs buffer layer 170 is grown at a temperature of 480 degrees, with a V / III ratio of 32, and a growth thickness of 500 nm.

[0059] Ninth, the P-type InAs 0.22 Sb 0.78Corrosion barrier layer 180, growth thickness 900nm.

[0060] Tenth, growth of P-type In at 480℃ 0.75 Ga 0.25 As 0.05 Sb y0.95 The grating fabrication layer has a growth thickness of 1000nm.

[0061] Eleventh, the reaction chamber is cooled to room temperature and the pressure is increased to atmospheric pressure, then the epitaxial wafer is removed.

[0062] Twelfth, use an etching method to apply a preset pattern to P-type In 0.75 Ga 0.25 As 0.05 Sb y0.95 The grating fabrication layer is etched to form P-type In. 0.75 Ga 0.25 As 0.05 Sb y0.95 190 grating layers.

[0063] Thirteenth, when the reaction chamber pressure is 50 mbar and the temperature reaches 280℃, arsine gas is continuously introduced. When the temperature rises to 480℃, a 500 nm thick P-type InAs protective layer is grown.

[0064] Fourteenth, 800 nm thick P-type InAs are grown sequentially from bottom to top on the P-type InAs protective layer. 0.75 Ga 0.25 As 0.05 Sb 0.95 A barrier gradient layer and a 50nm thick P-type In 0.8 Ga 0.2 As 0.05 Sb 0.95 A barrier transition layer is formed to create a P-type barrier layer 200.

[0065] Fifteenth, growing a P-type InA layer with a thickness of 80 nm on the P-type barrier layer 200. 0.12 Sb 0.88 Ohmic contact layer 210.

[0066] Sixteenth, cool the reaction chamber to room temperature, increase the pressure to atmospheric pressure, and remove the epitaxial wafer.

[0067] Another embodiment of the method for fabricating an antimony distributed feedback laser according to an embodiment of the present invention produces an antimony distributed feedback laser (hereinafter referred to as Embodiment Two) as follows:

[0068] First, the reaction chamber pressure of the MOCVD equipment is reduced to 50 mbar, and the temperature is raised to 330 degrees, and arsine is continuously passed, and the temperature is continuously raised to 590 degrees, and the surface of the InAs substrate is deoxidized.

[0069] Second, the reaction chamber temperature is reduced to 480℃, and the InAs buffer layer is grown, the growth thickness is 200 nm, and the growth rate is 0.5 nm / s; the Si doping concentration is 1E17-1E18.

[0070] Third, keep the temperature and continue to grow N-type InAs 0.04 Sb 0.96 Lower limit layer, growth thickness 800 nm.

[0071] Fourth, grow N-type In 0.8 Al 0.2 As 0.02 Sb 0.98 Lower waveguide layer, growth thickness 400 nm.

[0072] Fifth, grow 5 cycles of In 0.2 Ga 0.8 As / In x0.3 Al 0.2 Ga 0.5 As 0.2 Sb 0.8 Quantum well layer, thickness 150 nm.

[0073] Sixth, grow P-type In 0.8 Al 0.2 As 0.02 Sb 0.98 Upper waveguide layer, growth thickness 400 nm.

[0074] Seventh, grow P-type InAs at a temperature of 480℃ 0.04 Sb 0.96 Upper limit layer, growth thickness 1300 nm.

[0075] Eighth, grow P-type InAs buffer layer at a temperature of 480℃, where V / III is 32, and the growth thickness is 500 nm.

[0076] Ninth, grow P-type InAs at a temperature of 480℃ 0.22 Sb 0.78 Etching stop layer, growth thickness 900 nm.

[0077] Tenth, grow P-type In 0.75 Ga 0.25 As 0.05 Sb y0.95 Grating fabrication layer, growth thickness 1000 nm.

[0078] Eleventh, the reaction chamber is cooled to normal temperature, the pressure is raised to normal pressure, and the epitaxial wafer is taken out.

[0079] Twelfth, the grating layer is made by etching method.

[0080] Thirteenth, the reaction chamber pressure is 50 mbar, and when the temperature reaches 280°C, the arsine gas is continuously passed, the temperature is raised to 480°C, and a 500 nm thick P-type InAs protective layer is grown.

[0081] Fourteenth, then on the P-type InAs protective layer, from bottom to top, a 800 nm thick P-type In 0.75 Ga 0.25 As 0.05 Sb 0.95 , a 50 nm thick P-type In 0.8 Ga 0.2 As 0.05 Sb 0.95 barrier transition layer, and an 80 nm thick P-type InA 0.12 Sb 0.88 ohmic contact layer are grown in sequence.

[0082] Fifteenth, the reaction chamber is cooled to normal temperature, the pressure is raised to normal pressure, and the epitaxial wafer is taken out.

[0083] Figure 2 is a performance test diagram of the antimonide distributed feedback laser formed by the method for manufacturing the antimonide distributed feedback laser according to the embodiment of the present application.

[0084] Referring to Figure 2 , in the current range of 50 mA to 90 mA, the main mode of the laser covers a wavelength range of about 2127 nm to 2129 nm, that is, a discontinuous tuning range of about 2 nm, has good wavelength stability, and can be accurately aligned with the gas absorption peak by adjusting the temperature or current; it has a high side mode suppression ratio (SMSR), can effectively suppress the side mode, avoid cross interference of non-target gas, and can improve the sensitivity of gas detection.

[0085] Figure 3 is a curve diagram of the photoelectric conversion efficiency and output power of the antimonide distributed feedback laser according to the embodiment one and the embodiment two of the present application. Among them, in Figure 3 , the A line is the photoelectric conversion efficiency curve, and the B line is the output power curve. Figure 4 is a lifetime curve diagram of the antimonide distributed feedback laser according to the embodiment one and the embodiment two of the present application. Among them, in Figure 4 , the C line is the lifetime curve of the embodiment one, and the D line is the lifetime curve of the embodiment two.

[0086] With reference to Figure 3 The embodiment one uses ten periods of InGaAs / InAlGaAsSb quantum well layer, more than the embodiment two, by increasing the thickness of the quantum well layer, increasing the optical confinement factor, effectively reducing the threshold current, 20℃ threshold current 50mA, the maximum output power is about 55mW, and the photoelectric conversion efficiency of the embodiment one reaches 40%, higher than the 32% of the embodiment two, thereby improving the performance of the laser; and the life of the device is greatly prolonged, and the continuous stable operation at room temperature reaches 8000h Figure 4 ), much higher than the embodiment two.

[0087] The terms "exemplary", "example", and the like are used as adjectives to mean "serving as an example, instance, or illustration", with no implication that any feature is "preferred" or "advantageous" over other examples or features. The detailed description includes specific details for the purpose of providing an understanding of the described technologies. These technologies, however, can be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described technologies.

[0088] The above describes the optional implementation of the embodiments of the present application in detail in combination with the drawings, but the embodiments of the present application are not limited to the specific details in the above implementation, and various simple modifications can be made to the technical solutions of the embodiments of the present application within the technical concept scope of the embodiments of the present application, and these simple modifications all belong to the protection scope of the embodiments of the present application.

[0089] The above description of the content of the present specification is provided so that any ordinary person skilled in the art can implement or use the content of the present specification. Various modifications to the content of the present specification are obvious to those skilled in the art, and the general principles defined herein can also be applied to other variations without departing from the protection scope of the content of the present specification. Therefore, the content of the present specification is not limited to the examples and designs described herein, but is consistent with the broadest scope that meets the principles and novel features disclosed herein.

Claims

1. A method for fabricating an antimony compound distributed feedback laser, characterized in that, The manufacturing method includes the following steps: S1. An N-type first InAs buffer layer is formed on the substrate; S2. An N-type lower InAsSb confinement layer is formed on the N-type first InAs buffer layer; S3. An N-type lower InAlAsSb waveguide layer is formed on the N-type lower InAsSb confinement layer; S4. An InGaAs / InAlGaAsSb quantum well layer is formed on the N-type InAlAsSb waveguide layer. S5. A P-type InAlAsSb waveguide layer is formed on the InGaAs / InAlGaAsSb quantum well layer. S6. A P-type InAsSb confinement layer is formed on the P-type InAlAsSb waveguide layer. S7. A second InAs buffer layer of type P is formed on the InAsSb confinement layer of type P; S8. A P-type corrosion barrier layer is formed on the P-type second InAs buffer layer; S9. A P-type grating layer is formed on the P-type corrosion barrier layer; S10. A P-type barrier layer is formed on the P-type grating layer; S11. A P-type ohmic contact layer is formed on the P-type barrier layer; Among them, steps S1-S11 are performed using the MOCVD method.

2. The manufacturing method according to claim 1, characterized in that, In step S2, the material of the N-type InAsSb confinement layer is specifically InAs. 1-y Sb y , where 0.9≤y≤0.

97.

3. The manufacturing method according to claim 1, characterized in that, In step S3, the material of the N-type InAlAsSb waveguide layer is specifically In. x Al 1-x As 1-y Sb y , where 0.7≤x≤0.85, 0.96≤y≤0.

98.

4. The manufacturing method according to claim 1, characterized in that, In step S4, the InGaAs / InAlGaAsSb quantum well layer includes multiple periods of In x Ga 1-x As / In x Al y Ga 1-x-y As 1-z Sb z , among which, in In x Ga 1-x In As, 0.2 ≤ x ≤ 0.4; in In x Al y Ga 1-x-y As 1-z Sb z In the equation, 0.2≤x≤0.4, 0≤y≤0.5, and 0.74≤z≤0.

98.

5. The manufacturing method according to claim 1, characterized in that, In step S5, the material of the P-type InAlAsSb waveguide layer is specifically In. x Al 1-x As 1-y Sb y , where 0.7≤x≤0.85, 0.96≤y≤0.

98.

6. The manufacturing method according to claim 1, characterized in that, In step S6, the material of the InAsSb confinement layer on the P-type is specifically InAs. 1-y Sb y , where 0.9≤y≤0.

97.

7. The manufacturing method according to claim 1, characterized in that, In step S8, the specific material of the P-type corrosion barrier layer is InAs. 1-y Sb y , where y = 0.

78.

8. The manufacturing method according to claim 1, characterized in that, In step S9, the specific material of the P-type grating layer is In. x Ga 1-x As 1-y Sb y , where x = 0.75, 0.95 ≤ y ≤ 0.

98.

9. The manufacturing method according to claim 1, characterized in that, In step S10, the P-type barrier layer includes P-type In layers sequentially stacked on the P-type grating layer. x Ga 1-x As 1-y Sb y Barrier gradient layer and P-type In x Ga 1-x As 1-y Sb y Barrier transition layer, wherein, in P-type In x Ga 1-x As 1-y Sb y In the barrier gradient layer, x = 0.75, y = 0.95; in the P-type In x Ga 1-x As 1-y Sb y In the barrier transition layer, x = 0.8 and y = 0.

95.

10. An antimonide distributed feedback laser manufactured by the method described in any one of claims 1-9.

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