Intermediate infrared antimonide laser device structure adopting DWELL

A technology of antimonides and lasers, which is applied to lasers, laser components, semiconductor lasers, etc., can solve problems such as difficulty, affecting device performance, and low efficiency of a single quantum dot layer, so as to improve efficiency, improve overall performance, and improve electro-optic The effect of conversion efficiency

Inactive Publication Date: 2010-05-05
CHANGCHUN UNIV OF SCI & TECH
View PDF0 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The research on antimonide materials and devices is quite difficult: the effects of carrier absorption, Auger recombination, and surface recombination in narrow-band mid-infrared semiconductor devices are relatively large, which affects device performance.
Quantum dot mid-infrared laser is a promising device. Compared with compet

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Intermediate infrared antimonide laser device structure adopting DWELL

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0009] Such as figure 1 As shown, a mid-infrared antimonide laser structure using DWELL includes: n-type GaSb substrate (1), n-type GaSb buffer layer (2), n-type Al 0.9 Ga 0.1 As 0.03 Sb 0.97 Lower confinement layer (3), n-type Al 0.3 Ga 0.7 As 0.02 Sb 0.98 Lower waveguide layer (4), DWELL layer (5), DWELL layer (5) including barrier layer Al 0.3 Ga 0.7 As 0.02 Sb 0.98 (6), the quantum well layer In 0.2 Ga 0.8 As 0.02 Sb 0.98 (7), InGaSb quantum dot layer (8), p-type Al 0.3 Ga 0.7 As 0.02 Sb 0.98 Upper waveguide layer (9), p-type Al 0.9 Ga 0.1 As 0.03 Sb 0.97 The upper confinement layer (10), the p+ type GaSb ohmic layer (11). The substrate (1) is the base for material epitaxial growth, using a Te-doped GaSb substrate; growing a 0.5μm Te-doped GaSb buffer layer (2); the lower confinement layer is Al with a thickness of 1.2μm and an Al content of 0.9 0.9 Ga 0.1 As 0.03 Sb 0.97 Layer (3); the lower waveguide layer is Al with a thickness of 0.35μm and an Al content of 0.3 0.3 Ga 0.7...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an intermediate infrared antimonide laser device structure adopting DWELL, namely the intermediate infrared laser structure of DWELL, wherein, a DOT is embedded in a WELL, and the efficiency of the device is improved by increasing the number of the validity period of DWELL in the device. In component of active area is reduced, and quantum dots, well width and covering layers are optimized to reduce epitaxial layer strain to the minimum. As the emission efficiency and optical gain of the quantum dots are stronger than quantum wells; the capture ability, reflectivity and optical limiting ability of DWELL to electrons are stronger than single-layered quantum dots and multi-quantum dot structure, and the DWELL structure has higher emission efficiency. The intermediate infrared laser of the DWELL structure has both characteristics of the traditional quantum well and a quantum dot laser, and the carrier in DWELL has higher composite efficiency, thus the laser structure can work under higher temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser materials, and belongs to the field of epitaxial structure of new semiconductor laser materials. Background technique [0002] The mid-infrared band shows great application potential in the field of optoelectronic device applications, especially the 2-10μm band: atmospheric optical detection and environmental monitoring, free space optical communication, infrared testing, clean energy, biotechnology and thermal imaging. For example, the fingerprint characteristic lines of many pollutants and toxic gases and liquids fall in this band: methane (3.3 μm), CO 2 (4.6μm), CO (4.2μm), NO x (6.5μm) Online accurate measurement of multi-components in various complex environments, high concentrations and large ranges (ppb down to 100%). The mid-infrared band also requires high-sensitivity and high-sensitivity pharmaceuticals, and it also shows unique application value in biomedical imaging, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/00H01S5/343H01S5/028
Inventor 尤明慧高欣李占国刘国军李林李梅王勇乔忠良邹永刚邓昀王晓华李联合
Owner CHANGCHUN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap