Semiconductor laser with elliptic annular window

Abstract

A traditional vertical cavity surface emission semiconductor laser is in a completely symmetric round shape, output light of the laser is round symmetric light beams, the light beams are not hollow and is in an instable polarization state. The invention provides a semiconductor laser with an elliptic annular window. The structure is shown as figures: the elliptic annular window 1, an upper electrode 2, an ohmic contact layer 3, an upper distributed Bragg reflection mirror 4, an oxide limitation layer 5, a semiconductor material active gain layer 6, a lower distributed Bragg reflection mirror 7, a substrate 8 and a lower electrode 9, the overall structure from the elliptic annular window to the active gain layer is an elliptic cylindrical structure, the ratio selection range between the length of a long shaft and the length of a short shaft of the elliptic structure is 3:2 to 5:4, a central region of the elliptic cylindrical structure is hollow, and an elliptic etching region 10 formed by etching is etched from the ohmic contact layer to the upper distributed Bragg reflection mirror. The semiconductor laser works in an electric pumping mode, elliptic hollow light beams can be emitted under the effect of the elliptic annular window, the emitted elliptic hollow light beams have favorable polarization characteristics, and the polarization is in a stable state.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to a semiconductor laser with an elliptical ring window. Background technique [0002] Light is the carrier of energy and information, and has always played an important role in our observation and exploration of the world. The birth of the laser in 1960 endowed human beings with an extremely high-intensity light source, creating a new situation for us to understand and utilize light. The formation and transmission of laser beams have always been the main research direction in the laser field. In recent years, with the development of laser technology, a novel laser beam with a central light intensity of zero has been gradually formed, and developed into a special beam family, the hollow laser beam. A hollow laser beam is a ring-shaped beam with zero central light intensity in the direction of propagation, in other words, a beam with zero axial light intensity is called a "hollo...

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Problems solved by technology

[0005] In order to solve the problems that the existing technology cannot directly generate an elliptical hollow laser beam, and the existing technology has complex devices, difficult manufacturing, large volume, complex laser pumping methods, and poor stability, the vertical cavity surface emitting laser has a circularly symmetrical beam. advantage, the present invention proposes an elliptical annular window semiconductor laser

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