Quantum well epitaxy structure of semiconductor laser in 940 nm-1000 nm wave band

Abstract

The invention discloses a quantum well epitaxy structure of a semiconductor laser, in particular to a quantum well epitaxy structure of a high-efficiency semiconductor laser in a 940 nm-1000 nm wave band. The quantum well epitaxy structure comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and an electrode contact layer, wherein the buffer layer, the lower limiting layer, the lower waveguide layer, the quantum well layer, the upper waveguide layer, the upper limiting layer and the electrode contact layer are sequentially deposited on the substrate; the upper waveguide layer and the lower waveguide layer are AlxGaAs, and x is equal to 0.13-0.2; and the upper limiting layer and the lower limiting layer are AlyGaAs, and y is equal to 0.3-0.39. The quantum well epitaxy structure solves the problems of high working voltage and low photoelectric conversion efficiency of the semiconductor laser by optimizing the Al content of the waveguide layers and the limiting layers of the quantum well epitaxy structure, and achieves the purposes of reducing the working voltage and enhancing the photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a quantum well epitaxial structure of a semiconductor laser with low turn-on voltage and high efficiency in the 940nm-1000nm band. Background technique [0002] In recent years, almost all active regions of high-power semiconductor lasers use strained quantum well structures, because the strain effect and quantum size effect reduce the effective mass and density of states in the valence band of semiconductor lasers to obtain lower threshold currents. Density, thereby improving the working characteristics of the laser. Since the development of semiconductor lasers, the threshold current density has been from 1000A / cm 2 Reduced to 100A / cm 2 Next, the wavelength develops from infrared to far-infrared and visible light, and the output power continues to increase. The output power of a single tube develops from hundreds of milliwatts to several watts, and the performance is impro...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a semiconductor laser quantum well epitaxial structure in the 940nm-1000nm band. The problem of low conversion efficiency

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