Thin-film AlGaInP light-emitting diode chip and its preparation method

Abstract

The invention discloses a thin-film AlGaInP light-emitting diode chip and its preparation method. The light-emitting diode chip comprises a bonding substrate with positive and negative faces. From thefront surface of the bonding substrate upwards, it is sequentially provided with: a substrate side metal bonding layer, an epitaxial side metal bonding layer, a P surface diffusion barrier metal layer and a P surface reflection ohm contact layer; from the P surface reflection ohm contact layer to the top, it is sequentially provided with P-type current spreading layer, the P-type limiting layer,the P-side spatial layer, the multi-quantum well light-emitting region, the N-side spatial layer, the N-type limitation layer, the N-type coarse layer, the N-type ohm contact layer and the N electrode; and the reverse side of the bonding substrate is a P electrode. The P-plane reflecting ohm contact layer adopted by the invention has the functions of light reflection and ohm contact; by optimizingthe spacing distance of the block and the width of the N electrode through the blocking of the P-plane reflection ohm contact layer, the current injection concentration problem of the N-electrode corresponding region can be suppressed, and the N electrode shielding effect can be effectively reduced. The invention has the advantages of effectively improving the photoelectric conversion efficiency,simple structure and the like.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, in particular to a thin-film AlGaInP light-emitting diode chip and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diodes (Light-Emitting Diodes, LEDs) have been widely used in many fields, and are recognized as a next-generation green lighting source. The AlGaInP material lattice-matched with the gallium arsenide substrate can cover visible light wavelengths from 560nm to 650nm, and is an excellent material for preparing red to yellow-green LEDs. AlGaInP-LEDs have important applications in the field of solid-state lighting, such as full-color screen displays, automotive lights, backlights, traffic lights, and daily lighting. [0003] In recent years, people have made great progress in epitaxial growth technology. The internal quantum efficiency of AlGaInP light-emitting diodes can reach more than 90%, while conventional structure chips...

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Problems solved by technology

[0003] In recent years, people have made great progress in epitaxial growth technology. The internal quantum efficiency of AlGaInP light-emitting diodes can reach more than 90%, while conventional structure chips are affected by substrate absorption and total reflection loss, and the light extraction efficiency is less than 10%. , so the electro-optical conversion efficiency is only about 8%

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