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Multi-component metal oxide semiconductor mesoporous material and synthesizing method thereof

A technology of oxide semiconductor and multi-element metal, which is applied in the field of synthesis of multi-element metal oxide semiconductor mesoporous materials, can solve the problems of small specific surface area of ​​samples, harsh synthesis conditions, poor crystallinity, etc. The method is simple, the protection does not collapse, Effect of improving thermal stability

Inactive Publication Date: 2008-07-16
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no general applicable method for the synthesis of most multinary metal oxide semiconductor mesoporous materials. Only a few special multinary metal oxide mesoporous materials have been synthesized, and the synthesis conditions are harsh, and the obtained samples have small specific surface area and crystallization. degree difference

Method used

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  • Multi-component metal oxide semiconductor mesoporous material and synthesizing method thereof
  • Multi-component metal oxide semiconductor mesoporous material and synthesizing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Dissolve 0.004molSrCO3 in 20ml glacial acetic acid and add 5ml H 2 O, accelerate the dissolution in ultrasound to obtain a clear liquid, add 0.65g of P123 to the mixture, stir for 20min, slowly add 0.004mol of titanium isopropoxide to the mixture, stir for 3 hours, and transfer the resulting clear solution to the incubation Place the dish in a 40°C oven for 3 days, and take out the scraped dry gel. The obtained xerogel was calcined in the air at 500°C for 5 hours to obtain the multi-element metal oxide semiconductor mesoporous SrTiO 3 powder.

Embodiment 2

[0054] 2.95g SrCO 3 Add to 60ml glacial acetic acid, add 10ml H 2 O. Heat and stir overnight to obtain a clear solution. 0.02 mol of tetrabutyl titanate was added to 16 g of ethanol and stirred for 5 hours to obtain a clear solution. The latter solution was added to the previously obtained solution and stirred vigorously for one hour. Then, 2 g of surfactant (P123) was added to the obtained solution and stirred for 2 hours to obtain a clear solution. The clear solution was poured into a petri dish, placed in an oven at 40°C, and aged for 60 hours, then the xerogel was scraped off, and the resulting xerogel was calcined in the air at 550°C for 5 hours. Mesoporous SrTiO 3 powder.

Embodiment 3

[0056] Add 8 g of citric acid to 10 g of water, stir to obtain a clear solution, and add 5 ml of ethanol. Then 2.95gSrCO 3 Add to the above solution and stir for 5 hours until it is clear. Add 0.02mol of titanium isopropoxide and stir for 1 hour until it is completely clear. Add 2 g of surfactant (P123) to the resulting solution and stir for 2 hours to obtain a clear solution. The clear solution was poured into a petri dish, placed in an oven at 40°C, and aged for 60 hours, then the xerogel was scraped off, and the resulting xerogel was calcined in the air at 550°C for 5 hours. Mesoporous SrTiO 3 powder.

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Abstract

The invention relates to a semiconductor meso pore material of multivariate metal oxide, which has a general formula of AxByOz, wherein, A is equal to Ca, Sr, Ba, Na, K, La, Fe, Ni, Zn, Al, Si and so on, and B is equal to Ti, Ta, W, Fe, Co, Al, Si, In, Bi and so on; the condition that A is equal to Si while B is equal to Al is not included; specific surface area of the meso pore material is 10 to1,000 m2g-1; a pore wall of the meso pore is in a crystal state and adjustable aperture is between 2 nm to 50 nm; a pore channel shapes like a worm, cubic phase and hexagonal phase and so on. The material is synthesized through the following steps: 1) inorganic metal salt solution is prepared; 2) metal alkoxide salt solution is prepared; 3) the two solutions are mixed and stirred to obtain transparent or translucent solution; 4) certain amount of embedded segment surfactant is added into the solution and then the mixture is stirred until clarified; 5) the solution with the surfactant which isobtained in the step 4) is parched to obtain xerogel; 6) the xerogel is thermally processed; 7) the obtained xerogel is roasted; 8) impurities of the roasted sample are removed in acid or alkali solution and then the aperture is regulated.

Description

Technical field [0001] The invention relates to a method for synthesizing mesoporous (mesoporous) materials, in particular to a method for synthesizing mesoporous materials of multi-element metal oxide semiconductors. technical background [0002] Multi-element metal oxide materials are oxide materials composed of two or more metal elements. Because of its unique physical and chemical characteristics, with ferroelectric, ferromagnetic, piezoelectric, dielectric and other semiconductor properties, it is widely used in electronics and electrical engineering, catalysis, photoelectric conversion, environmental purification, fuel cells and other industries. The mesoporous multi-element metal oxide material can improve the original material in a certain function due to the mesoporous pore structure. In 1992, the M41S series of ordered mesoporous SiO was synthesized by the template method 2 The material research work was reported for the first time, and since then the mesoporous structu...

Claims

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Application Information

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IPC IPC(8): C04B38/04
Inventor 邹志刚范晓星刘礼飞陈新益
Owner NANJING UNIV
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