Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process

Abstract

Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of U.S. Provisional Application No. 62 / 830,270, filed on Apr. 5, 2019, in the United States Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.FIELD OF INVENTION[0002]The present disclosure generally relates to methods for forming a boron nitride film and particularly methods for depositing a boron nitride film by performing at least one unit deposition cycle of a plasma enhanced atomic layer deposition (PEALD) process.BACKGROUND OF THE DISCLOSURE[0003]Boron Nitride (BN) films may have a low dielectric constant in a range from about 2.2 to 5, depending on the deposition method and conditions and may therefore have potential applications for dielectric films. Boron nitride films may also have excellent mechanical resistance against chemical mechanical polishing (CMP) slurries and therefore boron nitride films may be utilized as a CMP stop layer in a po...

AI Technical Summary

Benefits of technology

The patent describes a method for making a thin film called boron nitride using a plasma process called atomic layer deposition (PEALD). The method involves plating a substrate with a vaporized reactant containing boron, followed by a plasma generated from a gas containing nitrogen. The resulting film has superior mechanical properties and can be used for various applications such as semiconductor device fabrication. The process is controlled to achieve the desired thickness and composition of the film, resulting in higher efficiency and purity. This method offers a reliable and efficient way to produce high-quality boron nitride films.

Problems solved by technology

Common methods for depositing boron nitride films utilize plasma enhanced chemical vapor deposition (PECVD) process which results in non-conformal films which may be unsuitable for non-planar substrates including high aspect ratio features.

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