Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process

a technology of boron nitride and atomic layer, which is applied in the direction of chemical vapor deposition coating, metal material coating process, coating, etc., can solve the problems of non-conformal films which may be unsuitable for non-planar substrates including high aspect ratio features

Pending Publication Date: 2020-10-08
ASM IP HLDG BV
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Problems solved by technology

Common methods for depositing boron nitride films utilize plasma enhanced chemical vapor deposition (PECVD) process whic

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  • Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process
  • Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process
  • Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process

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Embodiment Construction

[0014]Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

[0015]As used herein, the term “substrate” may refer to any underlying material or materials that may be used, or upon which, a device, a circuit or a film may be formed.

[0016]As used herein, the term “film” and “thin film” may refer to any continuous or non-continuous structures and material deposited by the methods disclosed herein. For example, “film” and “thin film” could include 2D materials, nanolaminates, nanorods, nanotubes, or nanoparticles or even partial or full molecular layers or partial or full atomic layers or clusters of atoms and / or molecules. “Film” and “thin film” ma...

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Abstract

Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of U.S. Provisional Application No. 62 / 830,270, filed on Apr. 5, 2019, in the United States Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.FIELD OF INVENTION[0002]The present disclosure generally relates to methods for forming a boron nitride film and particularly methods for depositing a boron nitride film by performing at least one unit deposition cycle of a plasma enhanced atomic layer deposition (PEALD) process.BACKGROUND OF THE DISCLOSURE[0003]Boron Nitride (BN) films may have a low dielectric constant in a range from about 2.2 to 5, depending on the deposition method and conditions and may therefore have potential applications for dielectric films. Boron nitride films may also have excellent mechanical resistance against chemical mechanical polishing (CMP) slurries and therefore boron nitride films may be utilized as a CMP stop layer in a po...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/34
CPCC23C16/342C23C16/45536C23C16/45542C23C16/505
Inventor FUKAZAWA, ATSUKI
Owner ASM IP HLDG BV
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