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Method for improving light degradation of boron-doped crystalline silicon solar cell

A solar cell, light-induced attenuation technology, applied in the field of solar cells, can solve the problems of increasing the production cost of the battery, reducing the light-induced attenuation amplitude, etc. Effect

Inactive Publication Date: 2016-07-20
ZHEJIANG JINKO SOLAR CO LTD +1
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for improving the light-induced attenuation of boron-doped crystalline silicon solar cells, which can effectively reduce the light-induced attenuation amplitude, and overcome the problem that the existing improvement method will greatly increase the production cost of the battery

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  • Method for improving light degradation of boron-doped crystalline silicon solar cell

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Embodiment Construction

[0023] As mentioned in the background art, boron-doped crystalline silicon solar cells have always been troubled by light-induced attenuation, which makes the cell efficiency low. In order to improve the light-induced attenuation phenomenon, in the prior art, the concentration of boron or oxygen is reduced at the side of the silicon wafer, but the specific implementation methods will greatly increase the production cost of the cell.

[0024] The inventors have found in experiments that, for cells covered with a surface film, when the cells are heated to a higher temperature and treated with a forward current for a period of time, the light-induced attenuation range of the cells is found to decrease. After research and analysis, it is concluded that for a battery sheet covered with a surface film containing hydrogen atoms, when the temperature is raised to a higher temperature, the diffusion rate of the boron atoms, oxygen atoms in the battery sheet, and hydrogen atoms contained...

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Abstract

The invention discloses a method for improving light degradation of a boron-doped crystalline silicon solar cell. The method comprises the following steps: heating a solar cell to enable the temperature to reach a first temperature and keeping constant temperature for a first preset time; electrifying the solar cell at constant temperature with preset current; electrifying for a second preset time; cooling the solar cell under electrifying state and reducing the temperature to be below the second temperature; after heating and performing constant temperature treatment on the solar cell, electrifying, combining boron atom and oxygen atom in the solar cell into a B-O pair, and combining with hydrogen atom in the surface film and forming into an H-B-O pair; generating the H-B-O pair to enable the B-O pair to deactivate. After the treatment according to the method provided by the invention, the B-O pair complex in the solar cell is reduced, so that the light degradation amplitude is reduced and the light degradation phenomenon of the boron-doped crystalline silicon solar cell can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for improving light-induced attenuation of boron-doped crystalline silicon solar cells. Background technique [0002] At present, boron-doped crystalline silicon solar cells occupy more than 70% of the products in the photovoltaic market. However, boron-doped crystalline silicon cells have always been troubled by the phenomenon of light-induced degradation. Light-induced degradation (LID) refers to the phenomenon that the photoelectric conversion efficiency of crystalline silicon solar cells decreases after being illuminated. It is generally believed that this phenomenon It is because the combination of boron and oxygen in the silicon crystal forms a recombination center of boron-oxygen pair, which is very easy to capture the minority carrier, which reduces the lifetime of the minority carrier and leads to a decrease in the conversion efficiency of the battery. [0...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/186H01L31/1876Y02E10/547Y02P70/50
Inventor 何广东金井升蒋方丹金浩
Owner ZHEJIANG JINKO SOLAR CO LTD
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