Plasma etching apparatus

Abstract

In order to improve a controllability of etching characteristics by way of precisely and freely controlling a flow or a density distribution of a processing gas introduced into a processing chamber, a plasma etching apparatus includes, as a gas inlet for introducing an etching gas into a plasma generation region PS in a chamber 10, an upper gas inlet (an upper central shower head 66a and an upper peripheral shower head 68a) for introducing a gas through an upper electrode 38; and a side gas inlet for introducing a gas through a sidewall of the chamber 10. The side gas inlet 104 has a side shower head 108 attached to the sidewall of the chamber 10.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a plasma etching apparatus; and, more particularly, to a parallel plate plasma etching apparatus. BACKGROUND OF THE INVENTION [0002] A recent trend towards a miniaturized semiconductor device structure in design criteria intensifies a demand for processing a material to be etched in a cross sectional shape of a high-density pattern. Currently, in a plasma etching apparatus for use in manufacturing a semiconductor device or a flat panel display (FPD), a generation of high-density plasma is indispensable for a miniaturization of a semiconductor device structure or a high-rate etching process for a substrate to be processed (a semiconductor wafer, a glass substrate or the like). Accordingly, in a parallel plate plasma etching apparatus, in order to generate the high-density plasma, various investigations or trials have been attempted by way of increasing a frequency of a plasma exciting radio frequency RF from a conventiona...

AI Technical Summary

Benefits of technology

The present invention provides a plasma etching apparatus that can improve the controllability of etching characteristics by way of precisely and freely controlling the flow or density distribution of processing gas in the plasma generation region. This is achieved by introducing different etchant gas species from two directions, namely, from the upper and side portions of the processing chamber, and mixing them in a controlled ratio. The apparatus includes a depressurizable processing chamber, a lower electrode for mounting the substrate, an upper electrode, a radio frequency power supply unit for forming a radio frequency electric field in the plasma generation region, and gas inlets for introducing the different gas species. The gas inlets have mass flow control units for independently controlling the flow rate of the gas species. The apparatus can improve the controllability of etching characteristics on the substrate by controlling the flow or density distribution of the processing gas in the plasma generation region.

Problems solved by technology

However, in the conventional parallel plate plasma etching apparatus, it is difficult to realize uniform etching characteristics on a substrate to be processed and, further, it is hard to control etching characteristics, especially on a peripheral portion of the substrate.

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