Method for improving spin-orbit coupling strength of Co/Pt thin film material

A technology of rail coupling and thin-film materials, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of volatility and limit the application of low-power logic storage devices, so as to increase the coupling strength, Low cost and simple preparation

Inactive Publication Date: 2015-06-03
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, this regulation behavior is based on the continuous existence of the gate voltage, which is a "volatile" regulation behavior, which will limit its application in low-power logic storage devices to a certain extent.

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  • Method for improving spin-orbit coupling strength of Co/Pt thin film material
  • Method for improving spin-orbit coupling strength of Co/Pt thin film material
  • Method for improving spin-orbit coupling strength of Co/Pt thin film material

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Embodiment Construction

[0018] figure 1 The preparation conditions of the samples are as follows: first, the TiNi shape memory alloy without pre-stretching and surface argon ion treatment is subjected to surface polishing treatment: mechanical polishing and chemical polishing, and the surface roughness after polishing is 2 nm; then, using acetone and The surface was cleaned with alcohol to obtain a TiNi substrate with a clean surface, and the thickness of the substrate was 0.1 mm. Then, using the magnetron sputtering method, on the above-mentioned TiNi memory alloy substrate, Co atoms (with a thickness of ) and Pt atoms (thickness of ), the number of repetitions is 5, thereby preparing the deposition Multilayer film with a background vacuum of 1×10 before sputter deposition -5 Pa, the argon pressure during sputtering is 0.5Pa.

[0019] figure 2 The preparation conditions of the samples are as follows: first, the TiNi memory alloy substrate is subjected to pre-stretching, surface polishing ...

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Abstract

The invention discloses a method for improving spin-orbit coupling strength of a Co / Pt thin film material, and belongs to the field of magnetic materials. The method comprises the following steps: performing prestretching treatment, surface polishing and surface argon ion bombardment on a titanium-nickel TiNi memory alloy substrate; depositing [Cobalt Co / Platinum Pt] n multilayer films on the TiNi memory alloy substrate; after deposition, performing two-step thermal treatment on the substrate in a vacuum environment, namely low temperature treatment and high temperature treatment, triggering the shape memory effect of the substrate, and meanwhile inducing the crystallized Co / Pt multilayer films to epitaxially grow on the TiNi substrate; at last, cooling the substrate to the room temperature. According to the method disclosed by the invention, the cheap shape memory alloy is used as the substrate, then uniform and controllable high elastic stress is generated on the spintronic thin-film material, and then the spin-orbit coupling strength of the whole thin film can be effectively enhanced; the method is free of high-cost rare metals or an expensive additional device, has the advantages of being high in efficiency, low in cost, simple to prepare and the like, and can be applied to the spintronic technology in the future.

Description

technical field [0001] The invention belongs to the field of magnetic materials, relates to a preparation method of spintronics thin film materials, and particularly provides a method for regulating the electronic structure of the spintronics thin film material, that is, the electronic state density distribution, by utilizing the shape memory effect of a memory alloy substrate, Thereby, the method for improving the spin-orbit coupling strength of spintronic thin film materials is provided. Background technique [0002] Through the intrinsic spin-orbit coupling in magnetic materials, that is, the interaction between the spin angular momentum and orbital angular momentum of electrons, the spin can be manipulated simply by an external electric field, and many important Physical effects such as anomalous Hall effect, spin Hall effect, magnetic neighbor effect, spin transfer torque effect, electric field regulation effect of magnetic structure, etc. Not only that, by adjusting t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/16C23C14/35C23C14/58
Inventor 冯春赵建成曹易于广华
Owner UNIV OF SCI & TECH BEIJING
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