FM/NM thin-film structure inverse spin hall voltage value measurement method

A technology of inverse spin Hall and thin film structure, applied in the direction of measuring current/voltage, measuring device, measuring electric variable, etc., can solve the problems of complicated steps and inaccurate measurement methods

Inactive Publication Date: 2016-01-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Application Information

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Problems solved by technology

[0004] In order to overcome the defects of inaccurate measurement methods and complicated steps in the background technology, the present invention provides a measurement method for accurately obtaining the inverse spin Hall voltage value in the FM/NM thin film structure, based on two effects on the direction of spin injection Dependence, the method of testing the spin pumping-inverse spin Hall effect voltage of FM/NM film structure samples by using the suspended microstrip transmission line fixture with short-circuited terminals, using the method

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  • FM/NM thin-film structure inverse spin hall voltage value measurement method
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  • FM/NM thin-film structure inverse spin hall voltage value measurement method

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Embodiment Construction

[0037] The present invention will be further described below by steps in the summary of the invention and accompanying drawing:

[0038] Place a sample with a length × width of 10 × 5 mm in a microstrip line fixture ( figure 1 ), and SMB100A (Rohde&Schwarz) was used as the microwave source, the frequency of the microwave signal was 4.4GHz, the power was 16dBm, and it was modulated by a square wave with a frequency of 10KHz. It is φ with the microwave magnetic field H The static magnetic field at the included angle is used, and the SR830 lock-in amplifier (Standard Research System) is used to detect the vibration generated by the microwave magnetic field excitation at both ends of the sample in the microstrip line fixture under the condition of accepting the 10KHz square wave sent by the microwave source as a reference signal. Voltage. Since the magnitude of the magnetic field applied by the electromagnet is linearly proportional to the magnitude of the input current, the cur...

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Abstract

The invention discloses an FM/NM thin-film structure inverse spin hall voltage value measurement method, and belongs to the field of spintronics research and manufacturing of the related spin devices. Voltage of the two ends of a sample is measured at configuration that the film surface is upward and then the film surface is downward by adopting a mode that the sample is vertically overturned in a microstrip line jig based on a method that spin pump-inverse spin hall effect voltage of the FM/NM thin-film structure sample is tested by utilizing a terminal short-circuit suspended microstrip transmission line jig. A spin rectification component and an inverse spin hall effect voltage component in measurement voltage can be accurately obtained by simple calculation according to difference of opposite direction of spin injection in the configuration of the sample so that reference is provided for accurate calculation of a spin hall angle.

Description

technical field [0001] The invention belongs to the field of spintronics research and related spin device manufacturing, and specifically relates to a spin pumping-inverse spin Hall effect voltage based on testing FM / NM film structure samples with a suspended microstrip transmission line fixture using terminal short circuit The method uses the method of turning the sample vertically in the microstrip line fixture, and measures the voltage at both ends of the sample when the film surface is vertically upward and the film surface is vertically downward. The difference in the direction of the spin injection is opposite, and the spin rectification component and the inverse spin Hall effect voltage component in the measurement voltage can be accurately obtained through calculation. Background technique [0002] In spintronics, spin is used as the carrier of information storage and transmission. Therefore, the generation, manipulation and detection of spin currents are always the ...

Claims

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Application Information

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IPC IPC(8): G01R19/00G01N24/00
Inventor 张文旭韩方彬彭斌吴婷张万里
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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