Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

FM/NM thin-film structure inverse spin hall voltage value measurement method

A technology of inverse spin Hall and thin film structure, applied in the direction of measuring current/voltage, measuring device, measuring electric variable, etc., can solve the problems of complicated steps and inaccurate measurement methods

Inactive Publication Date: 2016-01-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF5 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the defects of inaccurate measurement methods and complicated steps in the background technology, the present invention provides a measurement method for accurately obtaining the inverse spin Hall voltage value in the FM / NM thin film structure, based on two effects on the direction of spin injection Dependence, the method of testing the spin pumping-inverse spin Hall effect voltage of FM / NM film structure samples by using the suspended microstrip transmission line fixture with short-circuited terminals, using the method of vertically flipping the sample in the microstrip line fixture, successively The voltage across the sample is measured when the membrane surface is vertically upward and the membrane surface is vertically downward. According to the difference in the opposite direction of spin injection in the two sample configurations, the measured voltage can be accurately obtained by simple calculation. The middle spin rectification component and the inverse spin Hall effect voltage component provide a reference for accurate calculation of the spin Hall angle

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • FM/NM thin-film structure inverse spin hall voltage value measurement method
  • FM/NM thin-film structure inverse spin hall voltage value measurement method
  • FM/NM thin-film structure inverse spin hall voltage value measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The present invention will be further described below by steps in the summary of the invention and accompanying drawing:

[0038] Place a sample with a length × width of 10 × 5 mm in a microstrip line fixture ( figure 1 ), and SMB100A (Rohde&Schwarz) was used as the microwave source, the frequency of the microwave signal was 4.4GHz, the power was 16dBm, and it was modulated by a square wave with a frequency of 10KHz. It is φ with the microwave magnetic field H The static magnetic field at the included angle is used, and the SR830 lock-in amplifier (Standard Research System) is used to detect the vibration generated by the microwave magnetic field excitation at both ends of the sample in the microstrip line fixture under the condition of accepting the 10KHz square wave sent by the microwave source as a reference signal. Voltage. Since the magnitude of the magnetic field applied by the electromagnet is linearly proportional to the magnitude of the input current, the cur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an FM / NM thin-film structure inverse spin hall voltage value measurement method, and belongs to the field of spintronics research and manufacturing of the related spin devices. Voltage of the two ends of a sample is measured at configuration that the film surface is upward and then the film surface is downward by adopting a mode that the sample is vertically overturned in a microstrip line jig based on a method that spin pump-inverse spin hall effect voltage of the FM / NM thin-film structure sample is tested by utilizing a terminal short-circuit suspended microstrip transmission line jig. A spin rectification component and an inverse spin hall effect voltage component in measurement voltage can be accurately obtained by simple calculation according to difference of opposite direction of spin injection in the configuration of the sample so that reference is provided for accurate calculation of a spin hall angle.

Description

technical field [0001] The invention belongs to the field of spintronics research and related spin device manufacturing, and specifically relates to a spin pumping-inverse spin Hall effect voltage based on testing FM / NM film structure samples with a suspended microstrip transmission line fixture using terminal short circuit The method uses the method of turning the sample vertically in the microstrip line fixture, and measures the voltage at both ends of the sample when the film surface is vertically upward and the film surface is vertically downward. The difference in the direction of the spin injection is opposite, and the spin rectification component and the inverse spin Hall effect voltage component in the measurement voltage can be accurately obtained through calculation. Background technique [0002] In spintronics, spin is used as the carrier of information storage and transmission. Therefore, the generation, manipulation and detection of spin currents are always the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R19/00G01N24/00
Inventor 张文旭韩方彬彭斌吴婷张万里
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com