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Preparation method of SiC/Co heterogeneous composite nanowires

A nanowire and heterogeneous technology, which is applied in the field of preparation of composite nanowires, can solve the problems of large deposited particle size, cumbersome steps, and poor controllability

Inactive Publication Date: 2013-11-20
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of cumbersome steps, poor controllability and excessive deposition particle size in the existing SiC / Co composite electroless plating preparation method, and provide a preparation method of SiC / Co heterogeneous composite nanowires

Method used

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  • Preparation method of SiC/Co heterogeneous composite nanowires
  • Preparation method of SiC/Co heterogeneous composite nanowires

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specific Embodiment approach 1

[0012] Specific Embodiment 1: This embodiment is a method for preparing SiC / Co heterogeneous composite nanowires, which is specifically prepared according to the following steps:

[0013] 1. Mixing: first add SiC nanowires and cobalt-containing compounds to the polyol, and mix to obtain the mixture; the mass ratio of SiC nanowires and cobalt-containing compounds described in step 1 is 1: (0.2~5); step The volume ratio of the mass of the SiC nanowires described in 1 to the polyol is 1mg: (0.1mL~3mL);

[0014] 2. Reflux reaction: heat the mixture under the protection of inert gas, heat to boiling at a heating rate of 3°C / min-10°C / min, and reflux for 0.1h-2h to obtain the reaction product;

[0015] 3. Magnetic separation: first, the reaction product is cooled to room temperature, and then magnetic separation is performed. The solid obtained by magnetic separation is washed 2 to 5 times with deionized water, and the washed solid is dried. SiC / Co heterogeneous composite can be obta...

specific Embodiment approach 2

[0018] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the cobalt-containing compound described in step 1 is cobalt acetylacetonate or cobalt acetate. Others are the same as the first embodiment.

specific Embodiment approach 3

[0019] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the polyhydric alcohol described in step 1 is diethylene glycol, triethylene glycol or tetraethylene glycol. Others are the same as those in Embodiment 1 or 2.

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Abstract

The invention relates to a preparation method of composite nanowires, and particularly relates to a preparation method of SiC / Co heterogeneous composite nanowires. The invention aims to solve the problems of complicated steps, poor controllability and oversize deposited particle size existing in a conventional SiC / Co composite material chemical plating preparation method. The method comprises the steps: one, mixing; two, carrying out a reflux reaction; and three, carrying out magnetic separation to obtain the SiC / Co heterogeneous composite nanowires. The preparation method has the advantages that: one, the preparation method overcomes the problems of complicated steps and poor controllability in the conventional chemical plating; and two, the size of Co particles deposited on the surface of the SiC nanowires is 5 nm to 10 nm. The preparation method is mainly used for the preparation of the SiC / Co heterogeneous composite nanowires.

Description

technical field [0001] The invention relates to a method for preparing composite nanowires. Background technique [0002] Nanocomposite materials have shown incomparable advantages of single-component nanomaterials in biomedicine, microwave absorption, and catalysts. Silicon carbide (SiC) is a dielectric material with wide band gap, high carrier saturation drift velocity, high strength, high oxidation resistance, high corrosion resistance and low thermal expansion coefficient. It has great potential application value in high temperature devices, high speed circuit devices and high power devices. Cobalt (Co) nanoparticles are an important magnetic material, especially the excellent magnetic properties of its high Curie temperature, which make it widely used in single-electron devices, ultra-high-density information storage, biological anticancer drugs and microwave absorption. application prospects. The combination of silicon carbide and cobalt can realize the complementar...

Claims

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Application Information

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IPC IPC(8): C23C18/08
Inventor 王志江杨宗屿矫金福徐用军姜兆华
Owner HARBIN INST OF TECH
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