Novel stress control-based magnetic logic device

Abstract

The invention discloses a novel stress control-based magnetic logic device. The magnetic logic device is of a composite multilayer film structure, a ferromagnetic film nano wire grows over the center of a linear piezoelectric material film, and two sets of opposite electrodes B1 and B2 are arranged in the middle of a bottom piezoelectric film to be used as input ends of a logic signal level U; in a horizontal plane over the left end of the ferromagnetic nano wire, a conductive nano wire perpendicular to the nano wire direction is used as a magnetic write-in end; an oersted field, generated when a pulse current Iw passes through the conductive nano wire, can change the magnetization direction of the ferromagnetic nano wire underneath, and consequently, a magnetic domain wall is generated in the ferromagnetic nano wire; and the ferromagnetic nano wire is electrified with a control current Ic so as to drive the magnetic domain wall to move along the current direction. The magnetic logic device provided by the invention is based on electric field control, and has the advantages of being low in power consumption and being capable of working at room temperature; and the magnetic logic device can finish a 'NOT' logic function of single input, and 'NAND', 'NOR' and other logic operation functions of dual input or multiple input.

Description

technical field [0001] The invention relates to a novel magnetic logic device based on stress control. In the piezoelectric / ferromagnetic hybrid structure, through the inverse piezoelectric effect, the piezoelectric material substrate is deformed, and then the magnetic thin film attached to the piezoelectric material surface is also deformed, and controls the magnetic domain wall (Domain Wall, Hereinafter abbreviated as the movement of DW) to perform logic operations. The invention is applicable to any semiconductor logic device based on piezoelectricity, ferromagnetism, ferroelasticity and other multiferroic mixed structures to control the movement of magnetic domain walls. The invention belongs to the field of novel logic devices in semiconductor devices. Background technique [0002] Spintronic devices are developing rapidly due to their excellent characteristics such as non-volatility, high-speed reading and writing, high density, high stability, and long service life,...

AI Technical Summary

Problems solved by technology

Multiferroic materials have multiple ferromagnetic and ferroelectric orders at the same time, but their magnetoelectric coupling is very weak and only exists in low temperature environments, which greatly limits their application scenarios and development potential

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