Preparation method of QDs/Si heterojunction composite crystalline silicon wafer having high quantum efficiency

A heterojunction and composite crystal technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., to achieve the effects of improving the minority carrier life, easy control of experimental operating conditions, and simple and fast process operation methods

Inactive Publication Date: 2015-05-06
SHANGHAI NORMAL UNIVERSITY
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The effective absorption spectrum range of crystalline silicon solar cells is about 700nm to 1100nm; while solar energy in the ultraviolet and infrared regions cannot be absorbed or converted into thermal electrons

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of QDs/Si heterojunction composite crystalline silicon wafer having high quantum efficiency
  • Preparation method of QDs/Si heterojunction composite crystalline silicon wafer having high quantum efficiency
  • Preparation method of QDs/Si heterojunction composite crystalline silicon wafer having high quantum efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The preparation method and application of the QDs / Si heterojunction composite silicon wafer with high quantum efficiency provided in this embodiment, the specific steps are as follows:

[0028] (a) Prepare a 1mol / L pretreatment solution; measure a certain amount of 40% hydrofluoric acid, add a certain amount of distilled water, so that the concentration of the hydrofluoric acid is 1mol / L.

[0029] (b) Prepare metal source solution; weigh a certain amount of tin tetrachloride, add distilled water and stir evenly. Make the tin tetrachloride concentration 0.001mol / L.

[0030] (c) Immerse the battery sheet in the pretreatment solution for 15 seconds, take it out, and drain it; then immerse it in the metal source solution for 15 seconds, take it out, and drain it.

[0031] (d) Treat in a high temperature furnace at 800°C for 5 minutes.

Embodiment 2

[0033] The preparation method of this example is the same as that of Example 1, except that in step (a), the concentration of hydrofluoric acid in the pretreatment liquid is 0.5 mol / L.

Embodiment 3

[0035] The preparation method of this example is the same as that of Example 1, except that in step (a), the concentration of hydrofluoric acid in the pretreatment liquid is 2 mol / L.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of QDs / Si heterojunction composite crystalline silicon wafer having high quantum efficiency, and application thereof. The preparation method of QDs / Si heterojunction composite crystalline silicon wafer having high quantum efficiency uses chemical liquid phase deposition to uniformly grow a semiconductor quantum dot layer having broad-band gaps on the surface of the crystalline silicon, and then forms QDs / Si heterojunction after being subsequently processed. The quantum dot layer can not only modulate the energy gap of the composite crystalline silicon battery, but also the unique quantum confinement effect of the quantum dot can greatly and effectively increase the quantum efficiency of the crystalline silicon battery piece as well as the minority carrier lifetime, thereby increasing the overall photoelectric converting efficiency of the battery piece. The preparation method of QDs / Si heterojunction composite crystalline silicon wafer having high quantum efficiency, and application thereof also have the advantages that: 1, the technical condition is simple and easy to operate; 2, the equipment is simple and applicable to industrial mass production; 3, raw materials are easily obtained and low cost. Additionally, no poisonous or harmful substance is produced in the production process. The crystalline silicon piece is monocrystalline silicon piece, polycrystalline silicon piece, noncrystalline silicon piece, or microcrystalline silicon piece.

Description

technical field [0001] The invention relates to the fields of solar cells and photoelectric nanometer materials, in particular to a method for preparing a QDs / Si heterojunction compound crystalline silicon wafer with high quantum efficiency. Background technique [0002] Solar cells are the core components of photovoltaic power generation systems, and their development level directly determines the development level of photovoltaic power generation. Since the invention of solar cells in 1954, after more than half a century of development, there are currently many types of solar cells with increasingly diverse structures and significantly improved conversion efficiency. Solar cells currently on the market can be divided into three series according to different materials: crystalline silicon solar cells, thin-film solar cells, and photoelectrochemical solar cells (such as dye-sensitized solar cells). Although both thin-film solar cells and dye-sensitized solar cells have made...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 余锡宾杨海吴刚吴圣垚
Owner SHANGHAI NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap