Method for flattening deep grooves with different structures
A planarization method and deep groove technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as residue, excessive grinding surface, etc., and achieve the effect of improving yield, avoiding defects, and increasing the process window
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[0041] The deep trench planarization method of different structures of the present invention comprises steps:
[0042] 1) On the silicon substrate 1, deposit a layer with a thickness of 1,000 to 10,000 Angstroms by using low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD) or atmospheric pressure chemical vapor deposition (APCVD). The barrier layer 2 (as Figure 4 shown);
[0043] Wherein, the barrier layer 2 is made of an oxide film (such as silicon oxide), a nitride film (such as silicon nitride), or a combination of an oxide film and a nitride film.
[0044] 2) Deposit photoresist on the barrier layer 2, and after developing, dry or wet etch the barrier layer 2, that is, etch the barrier layer 2 to the silicon substrate 1, wherein the loss of the silicon substrate 1 is 100-300 angstroms, preferably 100 angstroms, exposing the silicon substrate 1 (such as Figure 5 shown).
[0045] 3) On the silicon substrate 1, etch a variety...
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