Oriented ZnO nanorod or nanowire film and preparation process thereof

Abstract

The present invention relates to directional nanometer zinc oxide stick or linear film and its preparation process, and belongs to the field of low-dimensional nanometer film material technology. The present invention adopts hydrothermal deposition process, in which zinc salt solution in molar concentration 1-25 mM and amine surfactant solution are mixed homogeneously and set inside stainless steel reactor with PTFE lining, substrate of glass, polymer, inorganic metal, non-metal or other material and with directional texture ZnO crystal seed is set inside the lining, so as to react at 50-150 deg.c for 1-6 hr. After cooling naturally, directionally grown and high crystallized ZnO nanometer stick array film or nanometer stick of diameter 10-500 nm may be form. The process has low synthesis temperature and easy control, and the grown ZnO film is well directional. The present invention is suitable for industrial production of directional nanometer ZnO stick or film.

Description

technical field [0001] The invention belongs to the preparation of low-dimensional nano material thin films, in particular to a crystal seed induced hydrothermal deposition method for synthesizing oriented array zinc oxide nanorod or wire thin films and its preparation technology. technical background [0002] Zinc oxide is an important wide-bandgap semiconductor functional material. The bandgap is 3.3eV at room temperature, and the exciton binding energy is as high as 60meV. It has strong free exciton transition luminescence in the ultraviolet band. It is cheap, non-toxic and harmless to the environment, suitable for epitaxial growth of thin films, and has broad application prospects in the field of information optoelectronics. It is another research hotspot in the world after GaN and GaS in recent years. Since the highly ordered growth of ZnO nanostructures on the substrate can make short-wave lasers and dye-sensitized nano-oxide solar electrodes, it has become a research ...

AI Technical Summary

Problems solved by technology

At present, the preparation of ZnO nanowires (rods) is mostly carried out by gas-liquid-solid (VLS) growth mechanism or chemical vapor deposition methods. However, these methods mostly use expensive sapphire and single crystal silicon as solid substrates, which require complex and expensive equipment and higher temperature

For the VLS method, the required temperature is greater than 800°C, and for the CVD method, the required temperature is greater than 500°C. The preparation conditions are quite harsh, which is not conducive to mass industrial production.

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