Thin film heterostructure preparation method

Abstract

The invention provides a thin film heterostructure preparation method. The method comprises steps: a wafer substrate with an injection surface is provided; ion implantation is carried out on the wafersubstrate from the injection surface, and an injection defect layer is formed at a preset depth in the wafer substrate; a support substrate is provided, and the support substrate and the wafer substrate are subjected to temperature rise bonding; the obtained structure is subjected to annealing treatment to form a continuous defect layer; the temperature of the obtained structure is reduced to a preset temperature, reverse thermal stress generated based on temperature reduction strips part of the wafer substrate along the continuous defect layer, and a thin film heterostructure comprising thesupport substrate and the wafer thin film is obtained, wherein the preset temperature is lower than the bonding temperature. In the temperature rise bonding mode, the thermal stress of the bonding structure can be reduced, the bonding structure can keep stable and complete in a high temperature process, the problem of wafer crack generated by thermal mismatch in the stripping process can be effectively solved, and through the reverse thermal stress assisting method, the bonding structure is separated at the continuous defect layer and a bonding interface is not influenced.

Description

technical field [0001] The invention belongs to the technical field of substrate preparation, in particular to a method for preparing a thin film heterostructure. Background technique [0002] With the advent of 5G communications and the development of the Internet of Everything (IOE), the chip technology commonly used in the past can no longer meet people's requirements for high performance, high integration and low power consumption. At this time, people are required to integrate chips with various functions. [0003] According to different material properties, chips based on different materials have their own advantages. For example, silicon chips have the advantages of high integration, gallium arsenide chips have the advantages of high speed and high frequency, gallium nitride chips have the advantages of high power, piezoelectric chips It is widely used in filters of radio frequency systems. To this end, Northrop Grumman Aerospace Sector in the United States integrat...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing a thin-film heterogeneous structure, which is used to solve the problem of the thermal strain of the thin-film heterogeneous substrate at high temperature in the prior art, so that high-temperature processes cannot be performed. And how to use auxiliary means to lift off the material to obtain the completed thin film heterogeneous substrate

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