Method for preparing thin film heterostructure

Abstract

The invention provides a method for preparing a thin film heterostructure. The method comprises the steps of providing a wafer substrate with an injection surface; conducting ion injection from the injection surface on the wafer substrate to form an injection defect layer at the predetermined depth of the wafer substrate; providing a support substrate, and performing temperature rising bonding onthe support substrate and the wafer substrate; annealing a obtained structure to form a continuous defect layer; stripping part of the wafer substrate through external force assisting, and forming wafer film on the wafer substrate to obtain a thin film heterostructure including the support substrate and the wafer film. The method can reduce the thermal strain of a bonding structure through the temperature rising bonding, so that the bonding structure remains stable and complete in the high-temperature process, and avoid the problem of film cracking caused by thermal mismatch in the stripping process, the bonding structure is separated from the continuous defect layer through the external force assisting method, so that no effect is caused on a bonding interface, and an external force assisting stripping method can reduce stripping temperature and stripping time, thereby reducing the cumulative effect of thermal stress in a piezoelectric crystal.

Description

technical field [0001] The invention belongs to the technical field of preparation of heterogeneous substrates, in particular to a preparation method of a thin film heterostructure. Background technique [0002] Piezoelectric materials have a wide range of applications in modern life, such as devices based on piezoelectric materials are widely used in acoustic filters, optical modulators and infrared detectors, etc. Traditional piezoelectric devices are mostly fabricated on single-crystal piezoelectric wafer materials, which have the disadvantages of single performance, large size, poor heat dissipation, and low sensitivity. [0003] At present, related devices based on piezoelectric thin films perform well in terms of size miniaturization and performance optimization. Most of the existing methods for preparing piezoelectric thin films use magnetron sputtering, molecular beam epitaxy, and laser pulse deposition on supporting substrates. method, but most of the films prepare...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a thin-film heterostructure, which is used to solve the problem of the large thermal strain of the thin-film heterogeneous substrate in the prior art under high-temperature processes, which leads to Problems that high-temperature processes cannot be performed and it is difficult to directly prepare thin-film heterogeneous substrates by means of external force assistance

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